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Inqubo Yokukhiqiza I-Semiconductor - Etch Technology
Kudingeka amakhulu ezinqubo ukuze kuguqulwe iwafa ibe yisemiconductor. Enye yezinqubo ezibaluleke kakhulu i-etching - okungukuthi, ukuqopha amaphethini wesifunda esihle ku-wafer. Impumelelo yenqubo yokubhala incike ekulawuleni okuguquguqukayo okuhlukahlukene ngaphakathi kwebanga elimisiwe lokusabalalisa, kanye nokuhlanganisa ngakunye...Funda kabanzi -
I-Ideal Material Yezindandatho zokugxilisa ku-Plasma Etching Equipment: I-Silicon Carbide (SiC)
Emishinini yokuhlanganisa i-plasma, izingxenye ze-ceramic zidlala indima ebalulekile, okuhlanganisa nendandatho yokugxila. Indandatho yokugxilisa ingqondo, ebekwe eduze kwewafa futhi ithintane nayo ngokuqondile, ibalulekile ekugxiliseni i-plasma ku-wafer ngokusebenzisa i-voltage eringini. Lokhu kuthuthukisa i-un...Funda kabanzi -
I-Front End of Line (FEOL): Ukubeka Isisekelo
Ukuphela komugqa wokukhiqiza kufana nokubeka isisekelo nokwakha izindonga zendlu. Ekwenziweni kwe-semiconductor, lesi sigaba sibandakanya ukudala izakhiwo eziyisisekelo nama-transistors ku-wafer ye-silicon. Izinyathelo ezibalulekile ze-FEOL: ...Funda kabanzi -
Umthelela we-silicon carbide processing single crystal kukhwalithi ye-wafer surface
Amadivayisi kagesi weSemiconductor athatha isikhundla esibalulekile ezinhlelweni zikagesi zamandla, ikakhulukazi kumongo wokuthuthuka okusheshayo kobuchwepheshe obufana nobuhlakani bokwenziwa, ezokuxhumana ze-5G kanye nezimoto zamandla amasha, izidingo zokusebenza kwazo kube ...Funda kabanzi -
Izinto eziyinhloko eziyinhloko zokukhula kwe-SiC: I-Tantalum carbide coating
Njengamanje, isizukulwane sesithathu sama-semiconductors sibuswa yi-silicon carbide. Esimisweni sezindleko zamadivayisi ayo, i-substrate ilandisa ngama-47%, futhi i-epitaxy ibalwa ngama-23%. Zombili lezi zihlangene zibalelwa ku-70%, okuyingxenye ebaluleke kakhulu ye-silicon carbide device manufa...Funda kabanzi -
Imikhiqizo eboshwe nge-tantalum carbide ikukhulisa kanjani ukumelana nokugqwala kwezinto?
I-Tantalum carbide coating iwubuchwepheshe bokwelapha obusetshenziswa kakhulu obungathuthukisa kakhulu ukumelana nokugqwala kwezinto. I-Tantalum carbide coating ingaxhunywa ebusweni be-substrate ngokusebenzisa izindlela ezihlukene zokulungiselela, njengokubeka umhwamuko wamakhemikhali, i-physica...Funda kabanzi -
Izolo, iScience and Technology Innovation Board ikhiphe isimemezelo sokuthi i-Huazhuo Precision Technology inqamule i-IPO yayo!
Usanda kumemezela ukulethwa kwemishini yokuqala engu-8-intshi ye-SIC ye-laser annealing e-China, okubuye kube ubuchwepheshe be-Tsinghua; Kungani bazihoxisa ngokwabo izinto zokwakha? Amagama ambalwa nje: Okokuqala, imikhiqizo ihluke kakhulu! Uma uthi nhlá, angazi ukuthi benzani. Njengamanje, uH...Funda kabanzi -
I-CVD silicon carbide coating-2
I-CVD silicon carbide coating 1. Kungani kune-silicon carbide coating Ungqimba lwe-epitaxial ifilimu ethile encane eyikristalu ekhule ngesisekelo se-wafer ngenqubo ye-epitaxial. I-wafer ye-substrate kanye nefilimu encane ye-epitaxial ngokuhlangene ibizwa ngokuthi ama-epitaxial wafers. Phakathi kwabo,...Funda kabanzi -
Ukulungiselela inqubo yokuhlanganisa i-SIC
Njengamanje, izindlela zokulungiselela ze-SiC coating ikakhulukazi zifaka indlela ye-gel-sol, indlela yokushumeka, indlela yokufaka ibhulashi, indlela yokufafaza nge-plasma, indlela yokusabela komphunga wamakhemikhali (CVR) kanye nendlela yokubeka umhwamuko wamakhemikhali (CVD). Indlela yokushumekaLe ndlela iwuhlobo lwezinga eliphezulu lokushisa...Funda kabanzi -
I-CVD Silicon Carbide Coating-1
Iyini i-CVD SiC Chemical vapor deposition (CVD) inqubo yokufaka i-vacuum esetshenziselwa ukukhiqiza izinto eziqinile ezihlanzekile. Le nqubo ivame ukusetshenziswa emkhakheni wokukhiqiza i-semiconductor ukwenza amafilimu amancanyana phezu kwama-wafers. Enqubweni yokulungiselela i-SiC nge-CVD, i-substrate iphelelwa yisikhathi...Funda kabanzi -
Ukuhlaziywa kwesakhiwo sokugudluka ku-SiC crystal ngokulingisa ukulandelwa kwe-ray kusizwa i-X-ray imaging topological
Isizinda socwaningo Ukubaluleka kokusetshenziswa kwe-silicon carbide (SiC): Njengempahla ye-semiconductor ye-bandgap ebanzi, i-silicon carbide idonse ukunaka okukhulu ngenxa yezakhiwo zayo zikagesi ezinhle kakhulu (ezifana ne-bandgap enkulu, isivinini sokugcwala kwama-electron aphezulu kanye nokushintshwa kwe-thermal). Lezi zinhlelo...Funda kabanzi -
Inqubo yokulungiselela ikristalu yembewu ekukhuleni kwekristalu eyodwa ye-SiC 3
Ukuqinisekiswa KokukhulaAmakristalu embewu ye-silicon carbide (SiC) alungiswa ngokulandela inqubo echaziwe futhi aqinisekiswa ngokukhula kwekristalu ye-SiC. Iplathifomu yokukhula esetshenzisiwe kwakuyisithando somlilo esithuthukisiwe se-SiC esinezinga lokushisa lokukhula lika-2200 ℃, ingcindezi yokukhula engu-200 Pa, kanye nesitshalo...Funda kabanzi