Njengamanje, izindlela zokulungiselela zeUkufakwa kwe-SiCikakhulukazi ihlanganisa indlela ye-gel-sol, indlela yokushumeka, indlela yokuhlanganisa ibhulashi, indlela yokufafaza ngeplasma, indlela yokusabela komhwamuko wamakhemikhali (CVR) kanye nendlela yokubeka umhwamuko wamakhemikhali (CVD).
Indlela yokushumeka
Le ndlela iwuhlobo lwezinga eliphezulu lokushisa okuqinile kwesigaba sintering, elisebenzisa kakhulu i-Si powder ne-C powder njengempusha yokushumeka, ibekai-graphite matrixku-powder yokushumeka, kanye ne-sinters ekushiseni okuphezulu ku-inert gas, futhi ekugcineni itholaUkufakwa kwe-SiCphezu kwe-graphite matrix. Le ndlela ilula uma iqhutshwa, futhi i-coating kanye ne-matrix kuhlanganiswe kahle, kodwa ukufana kwe-coating eduze kwesiqondiso sogqinsi kubi, futhi kulula ukukhiqiza izimbobo eziningi, okuholela ekungangeni kahle kwe-oxidation.
Indlela yokufaka ibhulashi
Indlela yokuhlanganisa ibhulashi ngokuyinhloko ixubha uketshezi oluluhlaza ebusweni be-graphite matrix, bese iqinisa impahla eluhlaza ezingeni lokushisa elithile ukuze kulungiswe ukunamathela. Le ndlela ilula ngenqubo futhi iphansi ngezindleko, kodwa ukugqoka okulungiselelwe indlela yokugcoba ibhulashi kunesibopho esibuthakathaka ne-matrix, ukufana okungekuhle kwe-coating, ukunamathela okuncane kanye nokumelana ne-oxidation ephansi, futhi kudinga ezinye izindlela zokusiza.
Indlela yokufafaza nge-plasma
Indlela yokufafaza ye-Plasma isebenzisa isibhamu se-plasma ngokuyinhloko ukufafaza izinto ezingavuthiwe ezincibilikisiwe noma ezincibilikisiwe ebusweni be-graphite substrate, bese iqina kanye nezibopho ukuze kwakhe ukunamathela. Le ndlela ilula ukusebenza futhi ingalungiselela ukuminyenei-silicon carbide coating, kodwai-silicon carbide coatingokulungiselelwe yile ndlela kuvame ukuba buthaka kakhulu ukuze kube nokuphikiswa okuqinile kwe-oxidation, ngakho-ke ngokuvamile kusetshenziselwa ukulungisa inhlanganisela ye-SiC yokwenza ngcono ikhwalithi yokunamathela.
Indlela ye-gel-sol
Indlela ye-gel-sol ngokuyinhloko ilungisa isisombululo se-sol esifana nesokumboza ingaphezulu le-substrate, iyomisa ibe ijeli, bese iyasifaka ukuze sithole ukunamathela. Le ndlela ilula ukuyisebenzisa futhi inezindleko eziphansi, kodwa ukugqoka okulungiselelwe kunezinkinga ezifana nokumelana nokushisa okuphansi okushisayo nokuqhekeka okulula, futhi akukwazi ukusetshenziswa kabanzi.
Indlela ye-Chemical vapor reaction (CVR)
I-CVR ikhiqiza umhwamuko we-SiO ngokusebenzisa impushana i-Si ne-SiO2 ezingeni lokushisa eliphezulu, futhi uchungechunge lokusabela kwamakhemikhali lwenzeka ebusweni be-substrate yezinto ezibonakalayo engu-C ukuze kukhiqizwe ukunamathela kwe-SiC. Ukugqoka kwe-SiC okulungiselelwe ngale ndlela kuhlanganiswe ngokuqinile ku-substrate, kodwa izinga lokushisa lokusabela liphezulu futhi izindleko nazo ziphezulu.
Isikhathi sokuthumela: Jun-24-2024