I-Silicon carbide (SiC)iyinhlanganisela yezinto ezingaphili eyaziwa ngezici zayo ezingavamile. I-SiC eyenzeka ngokwemvelo, eyaziwa ngokuthi i-moissanite, ayivamile. Kuzicelo zezimboni,i-silicon carbideikhiqizwa kakhulu ngezindlela zokwenziwa.
Kwa-Semicera Semiconductor, sisebenzisa amasu athuthukile wokwenzaizinga eliphezulu le-SiC powders.
Izindlela zethu zihlanganisa:
Indlela ye-Acheson:Le nqubo yendabuko yokunciphisa i-carbothermal ihlanganisa ukuxuba isihlabathi se-quartz ehlanzekile noma i-quartz ore echotshoziwe ne-petroleum coke, i-graphite, noma impushana ye-anthracite. Le ngxube ibe isishisiswe emazingeni okushisa angaphezu kuka-2000 ° C kusetshenziswa i-graphite electrode, okuholela ekuhlanganiseni kwe-α-SiC powder.
Ukunciphisa I-Carbothermal Yezinga Eliphansi Lokushisa:Ngokuhlanganisa i-silica powder emihle ne-carbon powder bese senza ukusabela ku-1500 kuya ku-1800 ° C, sikhiqiza i-β-SiC powder enobumsulwa obuthuthukisiwe. Le nqubo, efana nendlela ye-Acheson kodwa emazingeni okushisa aphansi, ikhiqiza i-β-SiC ngesakhiwo se-crystal esihlukile. Kodwa-ke, ukucubungula ngemuva kokukhipha i-carbon dioxide esele ne-silicon dioxide kuyadingeka.
Ukusabela Okuqondile kwe-Silicon-Carbon:Le ndlela ihilela ukusabela ngokuqondile kwe-silicon powder yensimbi ne-carbon powder ku-1000-1400 ° C ukukhiqiza i-powder β-SiC ephezulu. I-α-SiC powder isalokhu iwukhiye wezinto ezingavuthiwe ze-silicon carbide ceramics, kuyilapho i-β-SiC, nesakhiwo sayo esifana nedayimane, ilungele ukusetshenziswa okunembayo kokugaya nokupholisha.
I-silicon carbide ibonisa amafomu amabili amakhulu e-crystal:α futhi β. I-β-SiC, nesistimu yayo ye-cubic crystal, ifaka i-cubic lattice egxile ebusweni yakho kokubili i-silicon ne-carbon. Ngokuphambene, i-α-SiC ihlanganisa ama-polytypes ahlukahlukene njenge-4H, 15R, ne-6H, ne-6H esetshenziswa kakhulu embonini. Izinga lokushisa lithinta ukuzinza kwalawa ma-polytypes: i-β-SiC izinzile ngaphansi kwe-1600 ° C, kodwa ngaphezu kwalokhu kushisa, kancane kancane ishintshela ku-α-SiC polytypes. Isibonelo, i-4H-SiC yakha cishe ku-2000°C, kuyilapho i-15R kanye ne-6H polytypes idinga amazinga okushisa angaphezu kuka-2100°C. Ngokuphawulekayo, i-6H-SiC ihlala izinzile ngisho namazinga okushisa angaphezu kuka-2200 ° C.
Kwa-Semicera Semiconductor, sizinikele ekuthuthukiseni ubuchwepheshe be-SiC. Ubuchwepheshe bethu kuUkufakwa kwe-SiCnezinto zokwakha ziqinisekisa ikhwalithi ephezulu nokusebenza kwezinhlelo zakho zokusebenza ze-semiconductor. Hlola ukuthi izixazululo zethu ezisezingeni eliphezulu zingathuthukisa kanjani izinqubo zakho nemikhiqizo.
Isikhathi sokuthumela: Jul-26-2024