1. Uhlolojikelele
Ukushisa, okwaziwa nangokuthi ukucubungula okushisayo, kubhekisela ezinkambisweni zokukhiqiza ezisebenza emazingeni okushisa aphezulu, ngokuvamile aphezulu kunendawo yokuncibilika kwe-aluminium.
Inqubo yokushisisa imvamisa yenziwa esithandweni esinezinga lokushisa eliphezulu futhi ihlanganisa izinqubo ezinkulu ezifana ne-oxidation, ukusabalalisa ukungcola, kanye ne-annealing yokulungisa iphutha lekristalu ekukhiqizeni i-semiconductor.
I-oxidation: Kuyinqubo lapho iwafa ye-silicon ibekwa endaweni yezixube ezifana nomoya-mpilo noma umhwamuko wamanzi ukuze kuphathwe ukushisa okunezinga lokushisa eliphezulu, okubangela ukusabela kwamakhemikhali ebusweni bewafa ye-silicon ukuze kwakhe ifilimu ye-oxide.
Ukusabalalisa ukungcola: kubhekisela ekusetshenzisweni kwezimiso zokusabalalisa okushisayo ngaphansi kwezimo zokushisa okuphezulu ukwethula izinto ezingcolile ku-silicon substrate ngokuvumelana nezidingo zenqubo, ukuze ibe nokusatshalaliswa okukhethekile, ngaleyo ndlela kuguqule izakhiwo zikagesi zezinto ze-silicon.
I-Annealing ibhekisela kwinqubo yokushisisa iwafa ye-silicon ngemva kokufakwa kwe-ion ukuze kulungiswe iziphambeko ze-lattice ezibangelwa ukufakwa kwe-ion.
Kunezinhlobo ezintathu eziyisisekelo zemishini esetshenziselwa i-oxidation/diffusion/annealing:
- Isithando somlilo esivundlile;
- Isithando somlilo esiqondile;
- Isithando sokushisa esisheshayo: imishini yokwelapha ukushisa okusheshayo
Izinqubo zendabuko zokwelashwa kokushisa ngokuyinhloko zisebenzisa ukwelashwa kwesikhathi eside kwezinga lokushisa eliphezulu ukuze kuqedwe umonakalo obangelwa ukufakwa kwe-ion, kodwa ububi bayo ukususwa okungaphelele kwesici kanye nokusebenza kahle okuphansi kokwenza kusebenze ukungcola okufakiwe.
Ukwengeza, ngenxa yezinga lokushisa eliphezulu lokuthungatha kanye nesikhathi eside, ukwabiwa kabusha kokungcola kungenzeka kwenzeke, okubangele inani elikhulu lokungcola ukuba lisakazeke futhi lihluleke ukuhlangabezana nezimfuneko zezindawo ezihlanganayo ezingajulile kanye nokusabalalisa ukungcola okuwumngcingo.
Ukufakwa ngokushesha okushisayo okushisayo kwama-wafer afakwe i-ion kusetshenziswa okokusebenza okucutshungulwa ngokushisa okushisayo okusheshayo (RTP) kuyindlela yokwelapha ukushisa eshisisa yonke iwafa ibe izinga lokushisa elithile (ngokuvamile elingu-400-1300°C) ngesikhathi esifushane kakhulu.
Uma kuqhathaniswa ne-annealing yokushisa kwesithando somlilo, inezinzuzo zesabelomali esincane esishisayo, uhla oluncane lokuhamba kokungcola endaweni ye-doping, ukungcola okuncane kanye nesikhathi sokucubungula esifushane.
Inqubo ye-annealing eshisayo esheshayo ingasebenzisa imithombo yamandla ehlukahlukene, futhi ibanga lesikhathi sokudonsa libanzi kakhulu (kusuka ku-100 kuye ku-10-9s, njengokufakwa kwesibani, ukukhishwa kwe-laser, njll.). Ingenza kusebenze ukungcola ngokuphelele ngenkathi icindezela ngempumelelo ukwabiwa kabusha kokungcola. Njengamanje isetshenziswa kabanzi ezinqubweni zokukhiqiza isekethe edidiyelwe ephezulu enobubanzi obuyi-wafer obukhulu kuno-200mm.
2. Inqubo yokushisa yesibili
2.1 Inqubo ye-oxidation
Enqubweni yokukhiqiza isekethe edidiyelwe, kunezindlela ezimbili zokwenza amafilimu e-silicon oxide: i-thermal oxidation kanye ne-deposition.
Inqubo ye-oxidation ibhekisela kunqubo yokwenza i-SiO2 phezu kwama-silicon wafers nge-oxidation eshisayo. Ifilimu ye-SiO2 eyakhiwe yi-oxidation eshisayo isetshenziswa kakhulu enqubweni yokukhiqiza isekethe ehlanganisiwe ngenxa yezakhiwo zayo eziphakeme zokuhlukanisa ugesi kanye nokwenzeka kwenqubo.
Izicelo zayo ezibaluleke kakhulu yilezi ezilandelayo:
- Vikela amadivaysi ekuklwebheni nasekungcoleni;
- Ukukhawulela ukuhlukaniswa kwenkambu yabathwali abakhokhisiwe (i-surface passivation);
- Izinto ze-Dielectric ku-oxide yesango noma izakhiwo zamaseli okugcina;
- Ukufakela imaskhi ku-doping;
- Isendlalelo se-dielectric phakathi kwezingqimba zensimbi.
(1)Ukuvikelwa kwedivayisi nokuhlukaniswa
I-SiO2 etshalwe phezu kwe-wafer (i-silicon wafer) ingasebenza njengongqimba olusebenzayo lokuvimbela ukuhlukanisa nokuvikela amadivayisi azwelayo ngaphakathi kwe-silicon.
Ngenxa yokuthi i-SiO2 iyinto eqinile futhi engenambobo (eminyene), ingasetshenziswa ukuhlukanisa ngokuphumelelayo amadivayisi asebenzayo endaweni ye-silicon. Isendlalelo esiqinile se-SiO2 sizovikela isicwecwe se-silicon ekuklwebheni nasekulimaleni okungenzeka phakathi nenqubo yokukhiqiza.
(2)I-Surface passivation
I-Surface passivation Inzuzo enkulu ye-SiO2 ekhule ngokufudumeza ukuthi inganciphisa ukuminyana kwe-silicon ngokucindezela amabhondi ayo alengayo, umphumela owaziwa ngokuthi i-surface passivation.
Ivimbela ukuwohloka kukagesi futhi inciphisa indlela yokuvuza kwamandla okubangelwa umswakama, ama-ion noma okunye ukungcola kwangaphandle. Isendlalelo esiqinile se-SiO2 sivikela u-Si ekuklwebheni nasekucubunguleni umonakalo ongenzeka ngesikhathi sokukhiqiza.
Ungqimba lwe-SiO2 olukhule endaweni ye-Si lungabopha ukungcola okusebenza ngogesi (ukungcola kwe-ion yeselula) endaweni engu-Si. I-passivation ibalulekile futhi ekulawuleni ukuvuza kwamanje kwamadivayisi ahlanganayo kanye nokukhulisa ama-oxide esango ezinzile.
Njengesendlalelo sokudlula sekhwalithi ephezulu, ungqimba lwe-oxide lunezidingo zekhwalithi ezinjengogqinsi olufanayo, azikho izikhonkwane nama-voids.
Esinye isici ekusebenziseni ungqimba lwe-oxide njengongqimba lwe-Si surface passivation ukuqina kongqimba lwe-oxide. Isendlalelo se-oxide kufanele sijiye ngokwanele ukuze kuvinjelwe ungqimba lwensimbi ekushajeni ngenxa yokunqwabelana kweshaji endaweni ye-silicon, efana nesitoreji sokushaja nezici zokuwohloka zama-capacitor ajwayelekile.
I-SiO2 futhi ine-coefficient efanayo kakhulu yokwanda okushisayo ku-Si. Ama-wafer e-silicon ayanda ngesikhathi sezinqubo zokushisa okuphezulu kanye nenkontileka ngesikhathi sokupholisa.
I-SiO2 inwebeka noma yenza izinkontileka ngenani elisondelene kakhulu nele-Si, elinciphisa ukungqubuzana kwe-wafer ye-silicon phakathi nenqubo yokushisa. Lokhu futhi kugwema ukuhlukaniswa kwefilimu ye-oxide ebusweni be-silicon ngenxa yokucindezeleka kwefilimu.
(3)Isango le-oxide dielectric
Ngesakhiwo se-oxide yesango elisetshenziswa kakhulu futhi elibalulekile kubuchwepheshe be-MOS, ungqimba lwe-oxide oluncane kakhulu lusetshenziswa njenge-dielectric material. Njengoba ungqimba lwe-oxide yesango kanye ne-Si ngaphansi kunezici zekhwalithi ephezulu nokuzinza, ungqimba lwe-oxide yesango ngokuvamile lutholakala ngokukhula okushisayo.
I-SiO2 inamandla aphezulu e-dielectric (107V/m) kanye nokumelana okuphezulu (cishe 1017Ω·cm).
Isihluthulelo sokuthembeka kwamadivayisi we-MOS ubuqotho besendlalelo se-oxide yesango. Isakhiwo sesango kumadivayisi e-MOS silawula ukuhamba kwamandla. Ngenxa yokuthi le oxide iyisisekelo somsebenzi wama-microchips asekelwe kubuchwepheshe bomphumela wensimu,
Ngakho-ke, izinga eliphezulu, ukufana okuhle kakhulu kwefilimu kanye nokungabikho kokungcola kuyizidingo zayo eziyisisekelo. Noma yikuphi ukungcola okungahlehlisa umsebenzi wesakhiwo se-oxide yesango kufanele kulawulwe ngokuqinile.
(4)Isithiyo se-Doping
I-SiO2 ingasetshenziswa njengesendlalelo sokufihla esisebenzayo se-doping ekhethiwe yendawo ye-silicon. Uma ungqimba lwe-oxide selwakhiwe endaweni ye-silicon, i-SiO2 engxenyeni esobala ye-mask iqoshwa ukuze yakhe iwindi lapho okokusebenza kwe-doping kungangena khona ku-silicon wafer.
Lapho kungenamafasitela, i-oxide ingavikela indawo ye-silicon futhi ivimbele ukungcola ekusakazekeni, ngaleyo ndlela inike amandla ukufakwa kokungcola okukhethiwe.
Ama-Dopants ahamba kancane ku-SiO2 uma kuqhathaniswa ne-Si, ngakho-ke kudingeka ungqimba oluncane lwe-oxide kuphela ukuze kuvinjwe ama-dopants (qaphela ukuthi leli zinga lincike kuzinga lokushisa).
Ungqimba oluncane lwe-oxide (isb., 150 Å thick) lungasetshenziswa futhi ezindaweni lapho kudingeka khona ukufakwa kwe-ion, okungasetshenziswa ukunciphisa umonakalo endaweni ye-silicon.
Iphinde ivumele ukulawulwa okungcono kokujula kwe-junction ngesikhathi sokufakelwa kokungcola ngokunciphisa umthelela wokushanela. Ngemuva kokufakelwa, i-oxide ingasuswa ngokukhetha nge-hydrofluoric acid ukuze wenze indawo ye-silicon isicaba futhi.
(5)Isendlalelo se-Dielectric phakathi kwezingqimba zensimbi
I-SiO2 ayiwuhambisi ugesi ngaphansi kwezimo ezijwayelekile, ngakho-ke iyisivikeli esisebenzayo phakathi kwezingqimba zensimbi kuma-microchips. I-SiO2 ingavimbela amasekhethi amafushane phakathi kongqimba lwensimbi olungaphezulu kanye nongqimba lwensimbi oluphansi, njengesivikelo ocingweni singavimbela amasekhethi amafushane.
Imfuneko yekhwalithi ye-oxide ukuthi ayinazo izimbobo nama-voids. Ivamise ukwenziwa ukuze kutholwe uketshezi olusebenza kangcono, olunganciphisa kangcono ukusakazeka kokungcola. Ivamise ukutholwa ngokufakwa kwekhemikhali umhwamuko esikhundleni sokukhula okushisayo.
Ngokuya ngegesi yokusabela, inqubo ye-oxidation ivame ukuhlukaniswa ibe:
- I-oksijini eyomile: Si + O2→SiO2;
- I-oksijeni emanzi: 2H2O (umhwamuko wamanzi) + Si→SiO2+2H2;
- I-Chlorine-doped oxidation: Igesi ye-chlorine, njenge-hydrogen chloride (HCl), i-dichlorethylene DCE (C2H2Cl2) noma okuphuma kuyo, yengezwa kumoya-mpilo ukuze kuthuthukiswe izinga le-oxidation kanye nekhwalithi yongqimba lwe-oxide.
(1)Inqubo ye-oxygen oxidation eyomile: Amangqamuzana omoya-mpilo kugesi yokusabela asakazeka kusendlalelo se-oxide esesakhiwe kakade, afinyelele ukuxhumana phakathi kwe-SiO2 ne-Si, asabela ngo-Si, bese enza ungqimba lwe-SiO2.
I-SiO2 elungiselelwe i-oksijini eyomile inesakhiwo esiminyene, ukujiya okufanayo, ikhono eliqinile lokufihla umjovo kanye nokusabalalisa, kanye nokuphindaphinda kwenqubo ephezulu. Ububi bayo ukuthi izinga lokukhula lihamba kancane.
Le ndlela ngokuvamile isetshenziselwa ukufakwa kwe-oxidation kwekhwalithi ephezulu, okufana nesango le-dielectric oxidation, i-oxidation yengqimba encane yebhafa, noma ukuqalisa i-oxidation nokunqamula i-oxidation phakathi ne-oxidation yesendlalelo esiwugqinsi.
(2)Inqubo ye-oksijeni emanzi: Umhwamuko ungathwalwa ngokuqondile emoyeni, noma ungatholwa ngokusabela kwe-hydrogen nomoya-mpilo. Izinga le-oxidation lingashintshwa ngokulungisa isilinganiso sokucindezela ingxenye ye-hydrogen noma umhwamuko wamanzi kumoya-mpilo.
Qaphela ukuthi ukuze uqinisekise ukuphepha, isilinganiso se-hydrogen ne-oxygen akufanele sidlule u-1.88:1. I-oksijini oxidation emanzi ibangelwa ukuba khona kwakho kokubili umoya-mpilo nomoya wamanzi kugesi esabelayo, futhi umhwamuko uzobola ube yi-hydrogen oxide (H O) emazingeni okushisa aphezulu.
Izinga lokusatshalaliswa kwe-hydrogen oxide ku-silicon oxide lishesha kakhulu ukwedlula elomoya-mpilo, ngakho izinga le-oksijini elimanzi licishe libe i-oda elilodwa lobukhulu ngaphezu kwezinga le-oksijini eyomile.
(3)Inqubo ye-chlorine-doped oxidation: Ngaphezu kwe-oksijini eyomile yendabuko kanye ne-oksijeni emanzi, igesi ye-chlorine, njenge-hydrogen chloride (HCl), i-dichlorethylene DCE (C2H2Cl2) noma okuphuma kuyo, ingangezwa kumoya-mpilo ukuze kuthuthukiswe izinga le-oxidation kanye nekhwalithi yongqimba lwe-oxide. .
Isizathu esiyinhloko sokwenyuka kwezinga le-oxidation ukuthi uma i-chlorine yengezwa ukuze i-oxidation, i-reactant ayiqukethe nje umhwamuko wamanzi ongasheshisa i-oxidation, kodwa i-chlorine ibuye iqoqwe eduze kwesixhumi esibonakalayo phakathi kwe-Si ne-SiO2. Lapho kukhona umoya-mpilo, izinhlanganisela ze-chlorosilicon ziguqulwa kalula zibe i-silicon oxide, engase ibangele ukugeleza kwe-oxidation.
Isizathu esiyinhloko sokuthuthukiswa kwekhwalithi ye-oxide layer ukuthi ama-athomu e-chlorine kungqimba lwe-oxide angahlanza umsebenzi we-sodium ion, ngaleyo ndlela anciphise ukukhubazeka kwe-oxidation okwethulwa ukungcoliswa kwe-sodium ion kwemishini kanye nokucubungula izinto zokusetshenziswa. Ngakho-ke, i-chlorine doping ihileleke ezinqubweni eziningi ezomile ze-oxygen oxidation.
2.2 Inqubo yokusabalalisa
Ukusatshalaliswa kwendabuko kubhekisela ekudlulisweni kwezinto zisuka ezindaweni zokugxilisana okuphezulu ziye ezindaweni zokugxilisana okuphansi zize zisakazwe ngokulinganayo. Inqubo yokusabalalisa ilandela umthetho kaFick. Ukusabalalisa kungenzeka phakathi kwezinto ezimbili noma ngaphezulu, futhi umehluko wokugxila kanye nezinga lokushisa phakathi kwezindawo ezahlukene kuqhuba ukusatshalaliswa kwezinto esimweni sokulingana okufanayo.
Enye yezinto ezibaluleke kakhulu zezinto zokwakha ze-semiconductor ukuthi ukuqhutshwa kwazo kungalungiswa ngokungeza izinhlobo ezahlukene noma ukugxila kwama-dopants. Ekwenziweni kwesekethe edidiyelwe, le nqubo ivame ukufezwa ngokusebenzisa i-doping noma izinqubo zokusabalalisa.
Kuye ngezinjongo zokuklama, izinto zokwakha ze-semiconductor ezifana ne-silicon, i-germanium noma izinhlanganisela ze-III-V zingathola izici ezimbili ezihlukene ze-semiconductor, uhlobo lwe-N noma uhlobo lwe-P, ngokusebenzisa i-doping ngokungcola komnikeli noma ukungcola kokwamukela.
I-Semiconductor doping yenziwa ikakhulukazi ngezindlela ezimbili: ukusabalalisa noma ukufakwa kwe-ion, ngayinye enezici zayo:
I-Diffusion doping iyabiza kancane, kodwa ukugxila nokujula kwe-doping material ayikwazi ukulawulwa ngokunembile;
Nakuba ukufakwa kwe-ion kubiza kakhulu, kuvumela ukulawula okunembile kwamaphrofayili okugxilisa ama-dopant.
Ngaphambi kweminyaka yawo-1970, usayizi wesici sezithombe zesekethe edidiyelwe wawuku-oda lika-10μm, futhi ubuchwepheshe bendabuko bokusabalalisa okushisayo babuvame ukusetshenziselwa i-doping.
Inqubo yokusabalalisa isetshenziselwa kakhulu ukuguqula izinto ze-semiconductor. Ngokusabalalisa izinto ezihlukene zibe izinto ze-semiconductor, ukuqhutshwa kwazo kanye nezinye izakhiwo zomzimba kungashintshwa.
Isibonelo, ngokusabalalisa i-boron ye-trivalent element ku-silicon, i-semiconductor yohlobo lwe-P iyakhiwa; nge-doping pentavalent elements phosphorus noma i-arsenic, kwakhiwa i-semiconductor yohlobo lwe-N. Uma i-semiconductor yohlobo lwe-P enezimbobo eziningi ihlangana ne-semiconductor yohlobo lwe-N enama-electron amaningi, kwakheka ukuhlangana kwe-PN.
Njengoba osayizi besici bencipha, inqubo yokusabalalisa kwe-isotropic yenza kube nokwenzeka ngama-dopants ukuthi asakazekele kolunye uhlangothi lwesendlalelo se-shield oxide, okubangela izikhindi phakathi kwezifunda eziseduze.
Ngaphandle kokusetshenziswa okuthile okukhethekile (okufana nokusabalaliswa kwesikhathi eside ukuze kwakhiwe izindawo ezisatshalaliswa ngokulinganayo zamandla kagesi aphezulu), inqubo yokusabalalisa ithathelwe indawo kancane ngokufakwa kwe-ion.
Kodwa-ke, esizukulwaneni sobuchwepheshe esingaphansi kwe-10nm, njengoba usayizi we-Fin kudivayisi ye-three-dimensional fin field-effect transistor (FinFET) mncane kakhulu, ukufakwa kwe-ion kuzolimaza isakhiwo sayo esincane. Ukusetshenziswa kwenqubo yokusabalalisa umthombo oqinile kungase kuxazulule le nkinga.
2.3 Inqubo yokwehlisa izinga
Inqubo ye-annealing ibizwa nangokuthi i-thermal annealing. Inqubo iwukubeka iwafa ye-silicon endaweni yokushisa ephezulu isikhathi esithile ukuze uguqule i-microstructure ebusweni noma ngaphakathi kwe-silicon wafer ukuze kuzuzwe inhloso yenqubo ethile.
Imingcele ebaluleke kakhulu enqubweni ye-annealing izinga lokushisa kanye nesikhathi. Lapho izinga lokushisa liphakeme futhi isikhathi eside, siphezulu isabelomali esishisayo.
Enkambweni yangempela yokukhiqiza isekethe ehlanganisiwe, isabelomali esishisayo silawulwa ngokuqinile. Uma kunezinqubo eziningi zokudonsa ekugelezeni kwenqubo, isabelomali esishisayo singavezwa njengokuma okuphezulu kokwelashwa kokushisa okuningi.
Kodwa-ke, nge-miniaturization yama-node wenqubo, isabelomali esishisayo esivumelekile kuyo yonke inqubo siba sincane futhi sibe sincane, okungukuthi, izinga lokushisa lenqubo yokushisa ephezulu liyancipha futhi isikhathi siba sifushane.
Imvamisa, inqubo yokudonsa ihlanganiswa nokufakwa kwe-ion, ukufakwa kwefilimu emincane, ukwakheka kwe-silicidi yensimbi nezinye izinqubo. Okuvame kakhulu ukuhunyushwa okushisayo ngemva kokufakwa kwe-ion.
Ukufakwa kwe-ion kuzothinta ama-athomu e-substrate, kuwenze ahlukane nesakhiwo se-lattice sokuqala futhi kulimaze i-substrate lattice. I-annealing eshisayo ingalungisa umonakalo we-lattice odalwe ukufakwa kwe-ion futhi ingasusa ama-athomu okungcola atshaliwe asuke ezikhaleni ze-lattice awayise ezindaweni ze-lattice, ngaleyo ndlela asebenze.
Izinga lokushisa elidingekayo ukulungisa umonakalo we-lattice cishe li-500 ° C, futhi izinga lokushisa elidingekayo ukuze kusebenze ukungcola cishe ku-950 ° C. Ngokombono, uma isikhathi sokukhipha isisu eside futhi izinga lokushisa likhuphuka, izinga lokuvula lokungcola liphakeme, kodwa isabelomali esishisayo sizoholela ekusakazweni kokungcola okwedlulele, okwenza inqubo ingalawuleki futhi ekugcineni ibangele ukuwohloka kwedivayisi nokusebenza kwesekethe.
Ngakho-ke, ngokuthuthukiswa kobuchwepheshe bokukhiqiza, i-annealing yesithando somlilo yesikhathi eside kancane kancane ithathelwe indawo yi-rapid thermal annealing (RTA).
Enqubweni yokukhiqiza, amanye amafilimu athile adinga ukuthi enziwe inqubo yokushisa okushisayo ngemva kokufakwa ukuze kushintshwe izici ezithile ezibonakalayo noma zamakhemikhali zefilimu. Isibonelo, ifilimu exekethile iba minyene, ishintsha izinga layo lokucwilisa elomile noma elimanzi;
Enye inqubo evame ukusetshenziswa yokufaka i-annealing yenzeka ngesikhathi sokwakheka kwensimbi yensimbi. Amafilimu ensimbi afana ne-cobalt, i-nickel, i-titanium, njll. afafazwa phezu kwe-wafer ye-silicon, futhi ngemva kokufakwa ngokushesha okushisayo ezingeni lokushisa eliphansi kakhulu, insimbi ne-silicon kungakha ingxubevange.
Izinsimbi ezithile zakha izigaba ze-alloy ezihlukene ngaphansi kwezimo zokushisa ezihlukene. Ngokuvamile, kuthenjwa ukuthi kwakha isigaba se-alloy esinokumelana okuphansi kokuxhumana nokumelana nomzimba phakathi nenqubo.
Ngokwezidingo ezahlukene zebhajethi yokushisa, inqubo yokuthungatha ihlukaniswe yaba ukuhushula kwesithando sokushisa okuphezulu kanye nokuhushula okushisayo okushisayo.
- Ukushisa okuphezulu kweshubhu yesithando somlilo:
Kuyindlela yendabuko yokuthungatha enezinga lokushisa eliphezulu, isikhathi eside sokukhipha isisu kanye nesabelomali esiphezulu.
Kwezinye izinqubo ezikhethekile, ezifana nobuchwepheshe bokuhlukanisa umjovo we-oksijini wokulungiselela ama-SOI substrates kanye nezinqubo zokusabalalisa okujulile emthonjeni, isetshenziswa kabanzi. Izinqubo ezinjalo ngokuvamile zidinga isabelomali esiphezulu sokushisa ukuze kutholwe i-lattice ephelele noma ukusabalalisa okufanayo kokungcola.
- I-Rapid Thermal Annealing:
Kuyinqubo yokucubungula amawafa e-silicon ngokushisisa/ukupholisa okusheshayo kanye nokuhlala okufushane endaweni yokushisa okuhlosiwe, ngezinye izikhathi ebizwa nangokuthi i-Rapid Thermal Processing (RTP).
Enqubweni yokwenza ukuhlangana okungashoni kakhulu, ukujula okushisayo okusheshayo kufinyelela ukuthuthukiswa kokulungiswa phakathi kokulungiswa kwe-lattice, ukwenziwa kusebenze ukungcola, kanye nokunciphisa ukusabalala kokungcola, futhi kubalulekile enqubweni yokukhiqiza yamanodi obuchwepheshe obuthuthukile.
Inqubo yokunyuka/ukwehla kwezinga lokushisa kanye nokuhlala isikhashana ezingeni lokushisa okuhlosiwe ndawonye kwakha isabelomali esishisayo sokudonsa okushisayo okusheshayo.
Ukushisa okushisayo okujwayelekile kwendabuko kunezinga lokushisa elingaba ngu-1000°C futhi kuthatha imizuzwana. Eminyakeni yamuva nje, izidingo zokufakwa kwe-annealing okusheshayo ziye zaqina kakhulu, futhi ukufakwa kwe-flash annealing, i-spike annealing, kanye ne-laser annealing ziye zathuthuka kancane kancane, nezikhathi zokudonsa zifinyelela kuma-millisecond, futhi zivame ukuthuthukela kuma-microseconds nama-sub-microseconds.
3 . Imishini emithathu yokushisisa
3.1 Imishini yokusabalalisa kanye ne-oxidation
Inqubo yokusabalalisa ngokuyinhloko isebenzisa umgomo wokusabalalisa okushisayo ngaphansi kwezimo zokushisa eziphezulu (imvamisa engu-900-1200℃) ukuze ihlanganise izakhi zokungcola ku-silicon substrate ekujuleni okudingekayo ukuyinikeza ukusatshalaliswa okukhethekile, ukuze kuguqulwe izici zikagesi ze-silicon substrate. impahla futhi yakhe isakhiwo sedivayisi ye-semiconductor.
Kubuchwepheshe besekethe obudidiyelwe be-silicon, inqubo yokusabalalisa isetshenziselwa ukwenza i-PN junctions noma izingxenye ezifana ne-resistors, capacitors, i-interconnect wiring, ama-diode nama-transistors kumasekethe ahlanganisiwe, futhi isetshenziselwa ukuhlukaniswa phakathi kwezingxenye.
Ngenxa yokungakwazi ukulawula ngokunembile ukusatshalaliswa kwe-doping concentration, inqubo yokusabalalisa kancane kancane ithathelwe indawo yi-ion implantation doping process lapho kwakhiwa amasekethe ahlanganisiwe anobubanzi obuyi-wafer angama-200 mm nangaphezulu, kodwa inani elincane lisasetshenziswa esindayo. izinqubo ze-doping.
Imishini evamile yokusabalalisa ngokuyinhloko izithando zokusakaza ezivundlile, futhi kukhona nenani elincane lamaziko okusabalalisa aqondile.
Isithando somlilo esivundlile:
Kuyimishini yokwelapha ukushisa esetshenziswa kabanzi enqubweni yokusabalalisa yamasekhethi ahlanganisiwe anobubanzi obuyi-wafer obungaphansi kuka-200mm. Izici zayo ukuthi umzimba wesithando sokushisa, ishubhu lokusabela kanye nama-wafers esikebhe esine-quartz konke abekwe ngokuvundlile, ngakho-ke unezici zenqubo zokufana okuhle phakathi kwama-wafers.
Akuyona nje enye yemishini ebalulekile engaphambili emugqeni wokukhiqiza wesekethe edidiyelwe, kodwa futhi isetshenziswa kabanzi ekusakazweni, i-oxidation, i-annealing, i-alloying nezinye izinqubo ezimbonini ezinjengamadivaysi ahlukene, amadivaysi kagesi kagesi, amadivaysi e-optoelectronic kanye nama-optical fibers. .
Isithando somlilo esiqondile:
Ngokuvamile kubhekiselwa kumpahla yokwelapha ukushisa kwenqwaba esetshenziswa kunqubo yesekethe edidiyelwe yamawafa anobubanzi obungu-200mm no-300mm, ngokuvamile owaziwa ngokuthi isithando somlilo esime mpo.
Izici zesakhiwo sesithando somlilo esime mpo ukuthi umzimba wesithando sokushisa, ishubhu lokusabela kanye nesikebhe se-quartz esiphethe iwafa konke kubekwe kuqonde, futhi iwafa ibekwe ngokuvundlile. Inezici zokufana okuhle ngaphakathi kwewafa, izinga eliphezulu lokuzenzakalela, nokusebenza kwesistimu okuzinzile, okungahlangabezana nezidingo zemigqa emikhulu yokukhiqiza isekethe ehlanganisiwe.
Isithando somlilo esime mpo singenye yezinto ezibalulekile emugqeni wokukhiqiza wesekethe odidiyelwe we-semiconductor futhi sivame ukusetshenziswa ezinqubweni ezihlobene emikhakheni yamadivayisi kagesi kagesi (IGBT) nokunye.
Isithando somlilo esime mpo sisebenza ezinqubweni ze-oxidation ezifana ne-oksijini eyomile, i-hydrogen-oxygen synthesis oxidation, i-silicon oxynitride oxidation, nezinqubo zokukhula kwefilimu elincanyana njenge-silicon dioxide, i-polysilicon, i-silicon nitride (Si3N4), kanye nokubekwa kongqimba lwe-athomu.
Ibuye isetshenziswe ngokujwayelekile kumazinga okushisa aphezulu annealing, i-copper annealing kanye nezinqubo ze-alloying. Mayelana nenqubo yokusabalalisa, izithando zomlilo eziqondile kwesinye isikhathi nazo zisetshenziswa ezinqubweni ezisindayo ze-doping.
3.2 Imishini yokudonsa amanzi ngokushesha
Imishini ye-Rapid Thermal Processing (RTP) iyithuluzi lokwelapha ukushisa kwe-wafer eyodwa elingakhuphula ngokushesha izinga lokushisa le-wafer libe izinga lokushisa elidingwa inqubo (200-1300°C) futhi lingapholisa ngokushesha. Izinga lokushisa/ukupholisa livamise ukuba ngu-20-250°C/s.
Ngaphezu kohlu olubanzi lwemithombo yamandla nesikhathi sokukhipha amandla, okokusebenza kwe-RTP nakho kunokunye ukusebenza okuhle kakhulu kwenqubo, njengokulawula isabelomali esishisayo kanye nokufana okungcono kwendawo (ikakhulukazi amawafa angamasayizi amakhulu), ukulungisa umonakalo owenziwe yi-wafer odalwe ukufakwa kwe-ion, kanye amakamelo amaningi angasebenzisa izinyathelo zenqubo ehlukene ngasikhathi sinye.
Ngaphezu kwalokho, imishini ye-RTP ingakwazi ukuguqula kalula futhi ngokushesha futhi ilungise amagesi enqubo, ukuze izinqubo eziningi zokwelashwa kokushisa zingaqedwa ngenqubo efanayo yokwelapha ukushisa.
Imishini ye-RTP isetshenziswa kakhulu ku-rapid thermal annealing (RTA). Ngemuva kokufakwa kwe-ion, okokusebenza kwe-RTP kuyadingeka ukulungisa umonakalo odalwe ukufakwa kwe-ion, kusebenze ama-proton ane-doped futhi kuvinjwe ngempumelelo ukusabalalisa kokungcola.
Ngokuvamile, izinga lokushisa lokulungisa i-lattice licishe libe ngu-500°C, kuyilapho u-950°C lidingeka ukuze kusebenze ama-athomu ane-doped. Ukwenza kusebenze ukungcola kuhlobene nesikhathi nezinga lokushisa. Uma isikhathi eside futhi izinga lokushisa liphakama, ukungcola kwenziwa kusebenze ngokugcwele, kodwa akusizi ukuvimbela ukusabalala kokungcola.
Ngenxa yokuthi okokusebenza kwe-RTP kunezici zokushesha kwezinga lokushisa elikhuphukayo/ukuwa kanye nesikhathi esifushane, inqubo yokudonsa ngemva kokufakwa kwe-ion ingafinyelela ukukhetha okuhle kwepharamitha phakathi kokulungisa iphutha le-lattice, ukwenza kusebenze ukungcola kanye nokuvinjwa kokusabalalisa ukungcola.
I-RTA ihlukaniswe kakhulu izigaba ezine ezilandelayo:
(1)I-Spike Annealing
Isici saso ukuthi sigxile ekushiseni/okupholisa okusheshayo, kodwa ngokuyisisekelo ayinayo inqubo yokulondoloza ukushisa. I-spike annealing ihlala endaweni yokushisa ephezulu isikhathi esifushane kakhulu, futhi umsebenzi wayo oyinhloko ukwenza kusebenze izici ze-doping.
Ezinhlelweni zangempela, iwafa iqala ukushisisa ngokushesha ukusuka endaweni ethile ezinzile yokulinda futhi iphole ngokushesha ngemva kokufinyelela endaweni yezinga lokushisa eliqondiwe.
Njengoba isikhathi sokunakekela endaweni yokushisa okuqondisiwe (okungukuthi, izinga lokushisa eliphakeme kakhulu) sisifushane kakhulu, inqubo yokudonsa ingakhuphula izinga lokusebenzisa ukungcola futhi inciphise izinga lokusatshalaliswa kokungcola, kuyilapho inezici ezinhle zokulungisa i-anneal, okuholela ekuphakameni. ikhwalithi yokubopha kanye nokuvuza okuphansi kwamanje.
I-Spike annealing isetshenziswa kakhulu ezinqubweni ze-ultra-shallow junction ngemva kuka-65nm. Imingcele yenqubo yokuhlanganisa i-spike annealing ikakhulukazi ihlanganisa izinga lokushisa eliphakeme, isikhathi sokuhlala esiphezulu, ukwehlukana kwezinga lokushisa kanye nokumelana ne-wafer ngemva kwenqubo.
Isikhathi sokuhlala esifushane, siba ngcono. Ngokuyinhloko kuncike esilinganisweni sokushisa/sokupholisa sesistimu yokulawula izinga lokushisa, kodwa inqubo ekhethiwe yomkhathi wegesi ngezinye izikhathi nawo unomthelela othile kuwo.
Isibonelo, i-helium inevolumu encane ye-athomu kanye nezinga lokusabalalisa okusheshayo, elivumela ukudluliswa kokushisa okusheshayo nokufana okufanayo futhi linganciphisa ububanzi obuphezulu noma isikhathi sokuhlala esiphezulu. Ngakho-ke, ngezinye izikhathi i-helium ikhethwa ukusiza ukushisa nokupholisa.
(2)Ukufakwa Kwezibani
Ubuchwepheshe bokukhipha amalambu busetshenziswa kakhulu. Amalambu e-halogen ngokuvamile asetshenziswa njengemithombo yokushisa evala ngokushesha. Amazinga abo aphezulu okushisa/okupholisa kanye nokulawula izinga lokushisa okunembile kungahlangabezana nezidingo zezinqubo zokukhiqiza ezingaphezu kuka-65nm.
Kodwa-ke, ayikwazi ukuhlangabezana ngokugcwele nezidingo eziqinile zenqubo ye-45nm (ngemuva kwenqubo ye-45nm, lapho ukuthintana kwe-nickel-silicon ye-logic LSI kwenzeka, i-wafer idinga ukushisisa ngokushesha ukusuka ku-200 ° C kuya ngaphezu kuka-1000 ° C phakathi kwama-milliseconds, ngakho-ke i-laser annealing ngokuvamile iyadingeka).
(3)Ukukhishwa kwe-Laser
I-laser annealing inqubo yokusebenzisa i-laser ngokuqondile ukukhulisa izinga lokushisa lobuso be-wafer kuze kube yanele ukuncibilikisa i-silicon crystal, iyenze isebenze kakhulu.
Izinzuzo ze-laser annealing ukushisa okushesha kakhulu nokulawula okubucayi. Akudingi ukufudumeza kwe-filament futhi azikho izinkinga ngokulingana kwezinga lokushisa kanye nempilo ye-filament.
Nokho, ngokombono wezobuchwepheshe, i-laser annealing inezinkinga zamanje zokuvuza nezinsalela, ezizoba nomthelela othile ekusebenzeni kwedivayisi.
(4)I-Flash Annealing
I-Flash annealing ubuchwepheshe bokuthungatha obusebenzisa imisebe enamandla kakhulu ukwenza i-spike annealing kumawafa ngezinga lokushisa elithile langaphambi kokushisa.
I-wafer ishiselwa kuqala ibe ngu-600-800 ° C, bese kuthi imisebe enamandla kakhulu isetshenziselwe ukukhanya kwe-pulse yesikhashana. Lapho izinga lokushisa eliphakeme le-wafer lifinyelela izinga lokushisa elidingekayo le-anneal, imisebe iyavalwa ngokushesha.
Imishini ye-RTP iya ngokuya isetshenziswa ekukhiqizeni isekethe edidiyelwe ethuthukisiwe.
Ngaphezu kokusetshenziswa kabanzi ezinqubweni ze-RTA, imishini ye-RTP nayo isiqalile ukusetshenziswa ekufakweni kwe-oxidation eshisayo esheshayo, i-nitridation eshisayo esheshayo, ukusabalalisa okushisayo okushisayo, ukufakwa komhwamuko wamakhemikhali okusheshayo, kanye nokukhiqizwa kwe-silicide yensimbi kanye nezinqubo ze-epitaxial.
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Isikhathi sokuthumela: Aug-27-2024