Njengoba sazi, emkhakheni we-semiconductor, i-single crystal silicon (Si) iyinto esetshenziswa kakhulu futhi enkulu kunazo zonke izinto eziyisisekelo ze-semiconductor emhlabeni. Njengamanje, ngaphezu kwe-90% yemikhiqizo ye-semiconductor yenziwa kusetshenziswa izinto ezisekelwe ku-silicon. Ngokukhula kwesidingo samadivayisi anamandla amakhulu kanye namandla kagesi aphezulu emkhakheni wamandla wesimanje, izidingo eziqinile ziye zabekwa phambili kumapharamitha abalulekile wezinto zokwakha ze-semiconductor ezifana nobubanzi be-bandgap, amandla enkundla kagesi okuqhekeka, isilinganiso sokugcwala kwama-electron, kanye nokuhamba kwe-thermal. Ngaphansi kwalesi simo, izinto ezisetshenziswayo ze-semiconductor ye-bandgap ebanzi zimelelwa yii-silicon carbide(I-SiC) ivele njengentandokazi yezicelo zokuminyana kwamandla aphezulu.
Njenge-semiconductor ehlanganisiwe,i-silicon carbideiyivelakancane ngokwendalo futhi ivela ngendlela ye-mineral moissanite. Njengamanje, cishe yonke i-silicon carbide ethengiswa emhlabeni yenziwa ngokwenziwa. I-Silicon carbide inezinzuzo zobulukhuni obuphezulu, ukuqhutshwa kokushisa okuphezulu, ukuzinza okuhle kokushisa, kanye nensimu kagesi ephukile ebucayi. Kuyimpahla efanelekile yokwenza amadivaysi e-semiconductor ane-voltage ephezulu namandla aphezulu.
Ngakho-ke, akhiqizwa kanjani amadivaysi e-silicon carbide power semiconductor?
Uyini umehluko phakathi kwenqubo yokukhiqiza idivayisi ye-silicon carbide kanye nenqubo yokukhiqiza esekelwe ku-silicon? Kusukela kulolu shicilelo, “Izinto mayelanaIdivayisi ye-Silicon CarbideUkukhiqiza” kuzoveza izimfihlo ngayinye ngayinye.
I
Ukugeleza kwenqubo yokukhiqiza idivayisi ye-silicon carbide
Inqubo yokwenziwa kwamadivayisi e-silicon carbide ngokuvamile ifana naleyo yamadivayisi asekelwe ku-silicon, ikakhulukazi okuhlanganisa i-photolithography, ukuhlanza, i-doping, i-etching, ukwakheka kwefilimu, ukunciphisa nezinye izinqubo. Abakhiqizi abaningi bemishini yamandla bangahlangabezana nezidingo zokukhiqiza zamadivayisi we-silicon carbide ngokuthuthukisa imigqa yabo yokukhiqiza ngokusekelwe kwinqubo yokukhiqiza esekwe ku-silicon. Kodwa-ke, izici ezikhethekile ze-silicon carbide materials zinquma ukuthi ezinye izinqubo ekukhiqizeni idivayisi yayo zidinga ukuncika emishinini ethile ukuze ithuthukiswe ngokukhethekile ukuze inike amandla amadivaysi e-silicon carbide ukuthi amelane ne-voltage ephezulu kanye namandla aphezulu.
II
Isingeniso samamojula wenqubo ekhethekile ye-silicon carbide
Amamojula enqubo ekhethekile ye-silicon carbide ikakhulukazi amboza ukudotshwa komjovo, ukwakheka kwesakhiwo sesango, i-morphology etching, i-metallization, kanye nezinqubo zokuncipha.
(1) I-doping yomjovo: Ngenxa yamandla aphezulu ebhondi ye-carbon-silicon ku-silicon carbide, ama-athomu okungcola kunzima ukuwasakaza ku-silicon carbide. Lapho ulungiselela amadivaysi e-silicon carbide, i-doping ye-PN junctions ingafinyelelwa kuphela ngokufakwa kwe-ion ekushiseni okuphezulu.
I-Doping ngokuvamile yenziwa ngama-ion angcolile njenge-boron ne-phosphorus, futhi ukujula kwe-doping kuvame ukuba ngu-0.1μm~3μm. Ukufakelwa kwe-ion enamandla amakhulu kuzobhubhisa isakhiwo se-lattice se-silicon carbide impahla ngokwayo. I-annealing yezinga lokushisa eliphezulu iyadingeka ukuze kulungiswe umonakalo we-lattice obangelwe ukufakelwa kwe-ion kanye nokulawula umthelela wokuhushula ekuqineni kwendawo. Izinqubo ezingumongo ukufakwa kwe-ion yezinga lokushisa eliphezulu kanye nokunciphisa izinga lokushisa eliphezulu.
Umfanekiso 1 Umdwebo weSchematic wokufakelwa kwe-ion kanye nemiphumela yokushisa ephezulu yokushisa
(2) Ukwakheka kwesakhiwo sesango: Ikhwalithi yesixhumi esibonakalayo se-SiC/SiO2 inethonya elikhulu ekuthuthweni kwesiteshi nokuthembeka kwesango le-MOSFET. Kudingeka ukuthi kuthuthukiswe i-athomu yesango elithile kanye nezinqubo zokudonsa i-post-oxidation ukuze kunxeshezelwe amabhondi alengayo kusixhumi esibonakalayo se-SiC/SiO2 esinama-athomu akhethekile (njengama-athomu e-nitrogen) ukuze kuhlangatshezwane nezidingo zokusebenza zesixhumi esibonakalayo se-SiC/SiO2 sekhwalithi ephezulu kanye nokuphezulu. ukufuduka kwamadivayisi. Izinqubo eziyinhloko yisango le-oxide ye-high-temperature oxidation, i-LPCVD, ne-PECVD.
Umfanekiso 2 Umdwebo ohleliwe wefilimu ye-oxide evamile kanye ne-oxidation yezinga lokushisa eliphezulu
(3) I-Morphology etching: Izinto ze-silicon carbide azifaki kuzincibilikisi zamakhemikhali, futhi ukulawulwa kwe-morphology okunembayo kungafinyelelwa kuphela ngezindlela zokuqopha ezomile; izinto zokufihla imaski, ukukhethwa kwe-mask etching, igesi exutshwe, isilawuli se-sidewall, izinga lokunamathisela, ukuhwaqeka kwe-sidewall, njll. kudingeka kuthuthukiswe ngokuya nezici zezinto ze-silicon carbide. Izinqubo eziyinhloko ukufakwa kwefilimu emincane, i-photolithography, ukugqwala kwefilimu ye-dielectric, kanye nezinqubo zokucwilisa okomile.
Umfanekiso 3 Umdwebo weSchematic wenqubo ye-silicon carbide etching
(4) Ukwenziwa kwensimbi: I-electrode yomthombo yedivayisi idinga insimbi ukwenza ukuthintana okuhle kwe-ohmic ukumelana ne-silicon carbide. Lokhu akudingi nje kuphela ukulawula inqubo yokufaka insimbi kanye nokulawula isimo sokusebenzisana sokuxhumana kwe-metal-semiconductor, kodwa futhi kudinga ukufakwa kwezinga lokushisa eliphezulu ukuze kuncishiswe ukuphakama kwesithiyo se-Schottky futhi kuzuzwe ukuthintana kwe-metal-silicon carbide ohmic. Izinqubo ezingumongo i-metal magnetron sputtering, ukuhwamuka kwe-electron beam, kanye nokukhishwa kwe-thermal okusheshayo.
Umfanekiso 4 Umdwebo weSchematic wesimiso se-magnetron sputtering kanye nomphumela we-metalization
(5) Inqubo yokunciphisa: I-silicon carbide impahla inezici zokuqina okuphezulu, i-brittleness ephezulu kanye nokuqina okuphansi kokuphuka. Inqubo yayo yokugaya ijwayele ukubangela ukuphuka kwe-brittle kwempahla, okubangela ukulimala endaweni eyi-wafer kanye ne-sub-surface. Izinqubo ezintsha zokugaya zidinga ukuthuthukiswa ukuze kuhlangatshezwane nezidingo zokukhiqiza zamadivayisi we-silicon carbide. Izinqubo eziyinhloko ukuncipha kwamadiski okugaya, ukunamathela kwefilimu nokucwecwa, njll.
Umfanekiso 5 Umdwebo oyisikimu wesimiso sokugaya/ukuncipha kwe-wafer
Isikhathi sokuthumela: Oct-22-2024