Umlando we-Silicon carbide kanye ne-Silicon Carbide Coating Application

Ukuthuthukiswa kanye Nezicelo ze-Silicon Carbide (SiC)

1. Ikhulu Leminyaka Lokuqamba kabusha ku-SiC
Uhambo lwe-silicon carbide (SiC) lwaqala ngo-1893, lapho u-Edward Goodrich Acheson eklama isithando somlilo i-Acheson, esebenzisa izinto zekhabhoni ukuze kuzuzwe ukukhiqizwa kwezimboni kwe-SiC ngokufudumeza kukagesi kwequartz nekhabhoni. Lokhu okusunguliwe kwaphawula ukuqala kwezimboni ze-SiC futhi kwazuzela i-Acheson ilungelo lobunikazi.

Ekuqaleni kwekhulu lama-20, i-SiC yayisetshenziswa ngokuyinhloko njenge-abrasive ngenxa yokuqina kwayo okuphawulekayo nokumelana nokugqoka. Maphakathi nekhulu lama-20, intuthuko kubuchwepheshe be-chemical vapor deposition (CVD) yavula amathuba amasha. Abacwaningi eBell Labs, eholwa nguRustum Roy, babeka isisekelo se-CVD SiC, bafinyelela ukumbozwa kwe-SiC yokuqala ezindaweni zegraphite.

Iminyaka yawo-1970 yaba nentuthuko enkulu lapho i-Union Carbide Corporation isebenzisa i-graphite ehlanganiswe ne-SiC ekukhuleni kwe-epitaxial yezinto zokwakha ze-gallium nitride (GaN) semiconductor. Le ntuthuko idlale indima ebalulekile ekusebenzeni okuphezulu kwama-LED namalaser asuselwa ku-GaN. Emashumini eminyaka adlule, ukumbozwa kwe-SiC kuye kwanda ngaphezu kwama-semiconductors kuya ekusetshenzisweni kwe-aerospace, izimoto, namandla kagesi, ngenxa yentuthuko yamasu okukhiqiza.

Namuhla, izinto ezintsha ezifana nokufafaza okushisayo, i-PVD, kanye ne-nanotechnology zithuthukisa ukusebenza nokusetshenziswa kwezingubo ze-SiC, zikhombisa amandla ako ezinkambeni ezisezingeni eliphezulu.

2. Ukuqonda Izakhiwo Nezisetshenziswa Zekristalu ye-SiC
I-SiC iziqhayisa ngama-polytypes angaphezu kuka-200, ahlukaniswe ngamalungiselelo awo e-athomu abe yi-cubic (3C), ene-hexagonal (H), kanye nezakhiwo ze-rhombohedral (R). Phakathi kwalokhu, i-4H-SiC ne-6H-SiC isetshenziswa kabanzi kumadivayisi anamandla aphezulu kanye ne-optoelectronic, ngokulandelana, kuyilapho i-β-SiC ihlonishwa ngenxa ye-conductivity yayo ephakeme yokushisa, ukumelana nokugqoka, nokumelana nokugqwala.

β-SiC'sizakhiwo eziyingqayizivele, ezifana conductivity ezishisayo of120-200 W/m·Kkanye ne-thermal expansion coefficient ehambisana eduze negraphite, iyenze ibe yinto ekhethwayo yokumbozwa kwendawo kumishini ye-wafer epitaxy.

3. I-SiC Coatings: Izakhiwo kanye Namasu Okulungiselela
Izembatho ze-SiC, ngokuvamile i-β-SiC, zisetshenziswa kabanzi ukuze kuthuthukiswe izakhiwo ezingaphezulu njengokuqina, ukumelana nokugqoka, nokuzinza kwe-thermal. Izindlela ezijwayelekile zokulungiselela zihlanganisa:

• I-Chemical Vapor Deposition (CVD):Ihlinzeka ngezingubo zekhwalithi ephezulu ngokunamathela okuhle kakhulu nokufana, ilungele ama-substrates amakhulu futhi ayinkimbinkimbi.
• I-Physical Vapor Deposition (PVD):Inikeza ukulawula okunembayo kokubunjwa kwe-coating, kulungele izinhlelo zokusebenza ezinemba okuphezulu.
• Amasu okufafaza, i-Electrochemical Deposition, kanye ne-Slurry Coating: Isebenza njengezinye izindlela ezingabizi kakhulu zezinhlelo ezithile zokusebenza, nakuba kunemikhawulo ehlukahlukene yokunamathela nokufana.

Indlela ngayinye ikhethwa ngokusekelwe ezicini ze-substrate kanye nezidingo zohlelo lokusebenza.

4. I-SiC-Coated Graphite Susceptors ku-MOCVD
Ama-graphite susceptors ahlanganiswe nge-SiC abalulekile ku-Metal Organic Chemical Vapor Deposition (MOCVD), inqubo eyinhloko ekukhiqizweni kwe-semiconductor kanye ne-optoelectronic material.

Lezi susceptors zinikeza ukwesekwa okuqinile kokukhula kwefilimu ye-epitaxial, iqinisekisa ukuzinza okushisayo nokunciphisa ukungcoliswa kokungcola. I-SiC coating iphinde ithuthukise ukumelana ne-oxidation, izakhiwo ezingaphezulu, nekhwalithi yesixhumi esibonakalayo, okuvumela ukulawula okunembile ngesikhathi sokukhula kwefilimu.

5. Ukuqhubekela Esikhathini Esizayo
Eminyakeni yamuva nje, imizamo ebalulekile iye yaqondiswa ekuthuthukiseni izinqubo zokukhiqiza ama-graphite substrates ahlanganiswe ne-SiC. Abacwaningi bagxile ekuthuthukiseni ukuhlanzeka kwe-coating, ukufana, nokuphila ngenkathi behlisa izindleko. Ukwengeza, ukuhlola izinto ezintsha ezifanai-tantalum carbide (TaC).inikeza intuthuko engaba khona ekuphatheni okushisayo kanye nokumelana nokugqwala, kuvula indlela yezixazululo zesizukulwane esilandelayo.

Njengoba isidingo se-SiC-coated graphite susceptors siqhubeka sikhula, intuthuko ekukhiqizeni okuhlakaniphile kanye nokukhiqizwa kwezimboni kuzophinde kusekele ukuthuthukiswa kwemikhiqizo esezingeni eliphezulu ukuhlangabezana nezidingo eziguqukayo zezimboni ze-semiconductor kanye ne-optoelectronics.