Iqhaza Elibalulekile kanye Nezimo Zokusebenza Ze-SiC-Coated Graphite Susceptors ku-Semiconductor Manufacturing

I-Semicera Semiconductor uhlela ukukhulisa ukukhiqizwa kwezingxenye ezibalulekile zemishini yokukhiqiza i-semiconductor emhlabeni jikelele. Ngo-2027, sihlose ukusungula ifekthri entsha yamamitha-skwele angama-20,000 enesamba sokutshalwa kwezimali kwezigidi ezingama-70 zama-USD. Enye yezingxenye zethu eziyinhloko, iIsithwali se-silicon carbide (SiC)., eyaziwa nangokuthi i-susceptor, ibone intuthuko enkulu. Ngakho, liyini ngempela leli threyi eliphethe ama-wafer?

Enqubweni yokukhiqiza i-wafer, izendlalelo ze-epitaxial zakhiwe kuma-wafer substrates athile ukuze kwakhiwe amadivayisi. Isibonelo, izingqimba ze-GaAs epitaxial zilungiswa kuma-silicon substrates kumadivayisi e-LED, izendlalelo ze-SiC epitaxial zikhuliswa kuma-conductive SiC substrates ezisetshenziswa zamandla njengama-SBD nama-MOSFET, futhi izendlalelo ze-GaN epitaxial zakhiwe kuma-semi-insulating SiC substrates ezisetshenziswa ze-RF ezifana nama-HEMTs. . Le nqubo incike kakhuluI-chemical vapor deposition (CVD)imishini.

Emishinini ye-CVD, ama-substrates awakwazi ukubekwa ngokuqondile ensimbi noma isisekelo esilula se-epitaxial deposition ngenxa yezinto ezihlukahlukene ezifana nokugeleza kwegesi (evundlile, mpo), izinga lokushisa, ingcindezi, ukuzinza, nokungcola. Ngakho-ke, i-susceptor isetshenziselwa ukubeka i-substrate, ivumela i-epitaxial deposition isebenzisa ubuchwepheshe be-CVD. Lokhu susceptor kuyintoI-SiC-coated graphite susceptor.

I-SiC-coated graphite susceptors zivame ukusetshenziswa kumishini ye-Metal-Organic Chemical Vapor Deposition (MOCVD) ukusekela nokushisisa ama-substrates ekristalu eyodwa. Ukuzinza okushisayo nokufana kwe I-SiC-coated graphite susceptorszibalulekile ekukhuleni kwekhwalithi yezinto ezisetshenziswayo ze-epitaxial, zizenza ingxenye eyinhloko yemishini ye-MOCVD(izinkampani ezihamba phambili ze-MOCVD zemishini njengeVeeco ne-Aixtron). Njengamanje, ubuchwepheshe be-MOCVD busetshenziswa kabanzi ekukhuleni kwe-epitaxial yamafilimu e-GaN kuma-LED aluhlaza ngenxa yobulula bayo, izinga lokukhula elilawulekayo, nokuhlanzeka okuphezulu. Njengengxenye ebalulekile ye-MOCVD reactor, ii-susceptor yefilimu ye-GaN yokukhula kwe-epitaxialkumele ibe nokumelana nezinga lokushisa eliphezulu, i-thermal conductivity efanayo, ukuzinza kwamakhemikhali, nokumelana nokushaqeka okuqinile kokushisa. I-graphite ihlangabezana nalezi zidingo ngokuphelele.

Njengengxenye eyinhloko yemishini ye-MOCVD, i-graphite susceptor isekela futhi ishise i-single-crystal substrates, ethinta ngokuqondile ukufana nokuhlanzeka kwezinto zefilimu. Izinga layo lithinta ngokuqondile ukulungiswa kwama-epitaxial wafers. Kodwa-ke, ngokusetshenziswa okwandisiwe nezimo zokusebenza ezihlukene, ama-graphite susceptors aguga kalula futhi athathwa njengezinto ezisebenzisekayo.

I-MOCVD susceptorsIdinga ukuba nezici ezithile zokumboza ukuze ihlangabezane nezidingo ezilandelayo:

• - Ukusabalala okuhle:I-coating kufanele imboze ngokuphelele i-graphite susceptor ngokuminyana okuphezulu ukuvimbela ukugqwala endaweni yegesi egqwalayo.
• - Amandla okuxhumana aphezulu:I-coating kufanele ihambisane ngokuqinile ne-graphite susceptor, imelane nemijikelezo eminingi yezinga lokushisa eliphezulu kanye nethempelesha ephansi ngaphandle kokuxebuka.
• -Ukuzinza kwamakhemikhali:Ukugqoka kufanele kuzinze ngokwekhemikhali ukuze kugwenywe ukwehluleka endaweni enezinga lokushisa eliphezulu kanye ne-corroal atmosphere.

I-SiC, enokumelana nokugqwala kwayo, ukuguquguquka okuphezulu kokushisa, ukumelana nokushisa okushisayo, nokuzinza kwamakhemikhali aphezulu, yenza kahle endaweni ye-GaN epitaxial. Ukwengeza, i-coefficient yokwandisa okushisayo ye-SiC ifana ne-graphite, okwenza i-SiC ibe yinto ekhethwayo yezingubo ze-graphite susceptor.

Njengamanje, izinhlobo ezijwayelekile ze-SiC zifaka i-3C, 4H, ne-6H, ngayinye ilungele izinhlelo zokusebenza ezahlukene. Isibonelo, i-4H-SiC ingakhiqiza amadivayisi anamandla amakhulu, i-6H-SiC izinzile futhi isetshenziselwa amadivayisi we-optoelectronic, kuyilapho i-3C-SiC ifana nesakhiwo se-GaN, okwenza ifanele ukukhiqizwa kwe-GaN epitaxial layer kanye namadivayisi we-SiC-GaN RF. I-3C-SiC, eyaziwa nangokuthi i-β-SiC, isetshenziswa kakhulu njengefilimu kanye nezinto zokumboza, okuyenza ibe yinto eyinhloko yokumboza.

Kunezindlela ezihlukahlukene zokuzilungiselelaIzingubo ze-SiC, okuhlanganisa i-sol-gel, ukushumeka, ukuxubha, ukufuthwa kwe-plasma, chemical vapor reaction (CVR), kanye ne-chemical vapor deposition (CVD).

Phakathi kwalokhu, indlela yokushumeka iyinqubo ye-sintering yezinga eliphezulu lokushisa okuqinile. Ngokubeka i-graphite substrate ku-powder yokushumeka equkethe i-Si ne-C powder futhi i-sintering endaweni yegesi engasebenzi, amafomu okugcoba e-SiC ku-graphite substrate. Le ndlela ilula, futhi izibopho zokugqoka zibopha kahle ne-substrate. Kodwa-ke, ukugqoka akunakho ukufana kokuqina futhi kungase kube nama-pores, okuholela ekungangeni kahle kwe-oxidation.

I-spray Coating Indlela

Indlela yokumboza isifutho ibandakanya ukufafaza izinto zokusetshenziswa eziwuketshezi endaweni ye-graphite substrate bese uzilapha ngezinga lokushisa elithile ukuze zenze ukunamathela. Le ndlela ilula futhi ingabizi kakhulu kodwa iphumela ekuhlanganisweni okubuthakathaka phakathi kwe-coating kanye ne-substrate, ukufana okungekuhle kwe-coating, nezingubo ezincane ezinokumelana ne-oxidation encane, edinga izindlela ezisizayo.

Ion Beam Spraying Indlela

Ukufafaza kwe-ion beam kusebenzisa isibhamu se-ion beam ukufafaza izinto ezincibilikisiwe noma ezincibilikisiwe endaweni ye-graphite substrate, kwenze okokunamathela lapho kuqina. Le ndlela ilula futhi ikhiqiza ama-SiC aminyene. Kodwa-ke, izimbotshana ezincane zinokumelana ne-oxidation okubuthakathaka, okuvame ukusetshenziselwa ukumbozwa kwenhlanganisela ye-SiC ukuthuthukisa ikhwalithi.

Indlela ye-Sol-Gel

Indlela ye-sol-gel ihilela ukulungisa umfaniswano, isisombululo se-sol esobala, ukumboza indawo ye-substrate, nokuthola ukumbozwa ngemuva kokumisa nokucwilisa. Le ndlela ilula futhi ingabizi kakhulu kodwa ibangela ukumbozwa okunokumelana nokushaqeka okuphansi okushisayo kanye nokuthambekela kokuqhekeka, okukhawulela ukusetshenziswa kwayo okusabalele.

I-Chemical Vapor Reaction (CVR)

I-CVR isebenzisa impushana ye-Si ne-SiO2 emazingeni okushisa aphezulu ukuze ikhiqize umhwamuko we-SiO, ohlangana ne-carbon material substrate yakhe ukunamathela kwe-SiC. Umphumela we-SiC coating bonds uqinile ne-substrate, kodwa inqubo idinga izinga lokushisa eliphezulu lokusabela nezindleko.

I-Chemical Vapor Deposition (CVD)

I-CVD iyindlela eyinhloko yokulungiselela i-SiC coatings. Kubandakanya ukusabela kwesigaba segesi endaweni ye-graphite substrate, lapho izinto ezingavuthiwe zithola ukusabela ngokomzimba namakhemikhali, zifakwa njenge-SiC coating. I-CVD ikhiqiza izimbotshana ze-SiC eziboshwe ngokuqinile ezithuthukisa i-oxidation ye-substrate kanye nokumelana nokukhipha. Kodwa-ke, i-CVD inezikhathi ezinde zokubeka futhi ingabandakanya amagesi anobuthi.

Isimo Semakethe

Emakethe ye-graphite susceptor ehlanganiswe ne-SiC, abakhiqizi bangaphandle banokuhola okubalulekile kanye nesabelo semakethe esiphezulu. I-Semicera inqobile ubuchwepheshe obuyisisekelo bokukhula kokugqoka kwe-SiC efanayo kuma-graphite substrates, ihlinzeka ngezixazululo ezibhekana nokuqhutshwa kokushisa, i-elastic modulus, ukuqina, ukukhubazeka kwe-lattice, nezinye izinkinga zekhwalithi, ukuhlangabezana ngokugcwele nezidingo zemishini ye-MOCVD.

Ikusasa Outlook

Imboni ye-semiconductor yaseChina ithuthuka ngokushesha, ngokwanda kokwenziwa kwasendaweni kwemishini ye-MOCVD epitaxial kanye nokwandisa izinhlelo zokusebenza. Imakethe ye-graphite susceptor ehlanganiswe ne-SiC kulindeleke ukuthi ikhule ngokushesha.

Isiphetho

Njengengxenye ebalulekile kumishini ehlanganisiwe ye-semiconductor, ukuba ingcweti kobuchwepheshe bokukhiqiza obuyinhloko kanye nezinto ezifakwa endaweni ye-SiC-coated graphite susceptors kubaluleke kakhulu embonini ye-semiconductor yaseChina. Insimu yasekhaya ehlanganiswe ne-SiC-coated graphite susceptor iyachuma, nekhwalithi yomkhiqizo ifinyelela emazingeni omhlaba.I-Semicerailwela ukuba ngumhlinzeki oholayo kulo mkhakha.