Ukufakwa kwe-ion kuyindlela yokwengeza inani elithile kanye nohlobo lokungcola ezintweni ze-semiconductor ukuze kuguqulwe izici zabo zikagesi. Inani nokusatshalaliswa kokungcola kungalawulwa ngokunembile.
Ingxenye 1
Kungani usebenzise inqubo yokufakelwa kwe-ion
Ekwenziweni kwamadivayisi we-semiconductor yamandla, i-P/N doping yesifunda yendabukoizinkwa ze-siliconingafinyelelwa ngokusabalalisa. Kodwa-ke, ukusabalalisa okungaguquki kwama-athomu okungcola kui-silicon carbideiphansi kakhulu, ngakho-ke akunangqondo ukufeza i-doping ekhethiwe ngenqubo yokusabalalisa, njengoba kuboniswe kuMfanekiso 1. Ngakolunye uhlangothi, izimo zokushisa zokufakelwa kwe-ion ziphansi kunalezo zenqubo yokusabalalisa, futhi ukusabalalisa kwe-doping okuguquguqukayo nokunembile kwakheka.
Umfanekiso 1 Ukuqhathaniswa kobuchwepheshe be-doping bokufakelwa kwe-ion ku-silicon carbide materials
Ingxenye 2
Indlela yokufezai-silicon carbideukufakwa kwe-ion
Imishini evamile yokufakelwa kwe-ion enamandla amakhulu esetshenziswa enqubweni yokukhiqiza ye-silicon carbide ikakhulukazi iqukethe umthombo we-ion, i-plasma, izingxenye ze-aspiration, izibuthe zokuhlaziya, imishayo ye-ion, amashubhu okusheshisa, amakamelo okucubungula, namadiski okuskena, njengoba kuboniswe kuMfanekiso 2.
Umfanekiso we-2 Umdwebo we-Schematic we-silicon carbide yokufakelwa kwe-ion enamandla kakhulu
(Umthombo: “I-Semiconductor Manufacturing Technology”)
Ukufakwa kwe-SiC ion kuvame ukwenziwa ekushiseni okuphezulu, okunganciphisa ukulimala kwe-crystal lattice okubangelwa ukuqhuma kwe-ion. Ngoba4H-SiC amawafa, ukukhiqizwa kwezindawo zohlobo lwe-N ngokuvamile kufezwa ngokufaka i-nitrogen ne-phosphorus ions, nokukhiqizwa kweUhlobo lwe-Pizindawo ngokuvamile zitholakala ngokufaka ama-ion e-aluminium nama-boron ions.
Ithebula 1. Isibonelo se-doping ekhethiwe ekukhiqizeni idivayisi ye-SiC
(Umthombo: Kimoto, Cooper, Okuyisisekelo Se-Silicon Carbide Technology: Ukukhula, Ukwenziwa Kwezinhlamvu, Amadivayisi, kanye Nezicelo)
Umfanekiso 3 Ukuqhathaniswa kokufakelwa kwe-ion yamandla enezinyathelo eziningi kanye nokusabalalisa kokugxiliswa kwe-wafer surface doping
(Umthombo: G.Lulli, Isingeniso Sokufakwa Kwe-Ion)
Ukuze kuzuzwe ukugxilwa kwe-doping okufanayo endaweni yokufakelwa kwe-ion, onjiniyela bavame ukusebenzisa ukufakelwa kwe-ion yezinyathelo eziningi ukuze balungise ukusabalalisa kokuhlushwa okuphelele kwendawo yokufakelwa (njengoba kuboniswe kuMfanekiso 3); enqubweni yokukhiqiza yenqubo yangempela, ngokulungisa amandla okufakelwa kanye nomthamo wokufakelwa kwe-ion implantation, ukugxila kwe-doping nokujula kwe-doping yendawo yokufakelwa kwe-ion kungalawuleka, njengoba kuboniswe kuMfanekiso 4. (a) no-(b); i-ion implantation yenza iyunifomu ye-ion implantation endaweni eyilucwecwana ngokuskena indawo eyisicwecwana izikhathi eziningi phakathi nokusebenza, njengoba kuboniswe kuMfanekiso 4. (c).
(c) I-trajectory yokunyakaza ye-ion implantation ngesikhathi sokufakwa kwe-ion
Umfanekiso 4 Ngesikhathi senqubo yokufakelwa kwe-ion, ukugxila kokungcola nokujula kulawulwa ngokulungisa amandla okufakelwa kwe-ion kanye nomthamo.
III
Inqubo yokuvula i-annealing yokufakelwa kwe-silicon carbide ion
I-concentration, indawo yokusabalalisa, izinga lokuvula, amaphutha emzimbeni kanye nangaphezulu kokufakelwa kwe-ion yimingcele eyinhloko yenqubo yokufakelwa kwe-ion. Kunezici eziningi ezithinta imiphumela yale mingcele, okuhlanganisa umthamo wokufakelwa, amandla, i-crystal orientation yento, izinga lokushisa lokufakelwa, izinga lokushisa le-annealing, isikhathi se-annealing, imvelo, njll. Ngokungafani ne-silicon ion implantation doping, kusenzima ukwenza i-ionize ngokuphelele. ukungcola kwe-silicon carbide ngemva kokufakwa kwe-ion doping. Uma sithatha isilinganiso se-ionization yokwamukela i-aluminium endaweni engathathi hlangothi ye-4H-SiC njengesibonelo, ekugxilweni kwe-doping engu-1 × 1017cm-3, izinga le-ionization eyamukelayo licishe libe ngu-15% kuphela kuzinga lokushisa elilingana negumbi (imvamisa izinga le-ionization le-silicon licishe lifane. 100%). Ukuze kuzuzwe umgomo wezinga eliphezulu lokuvula kanye nokukhubazeka okumbalwa, inqubo yokushisa ephezulu yokushisa izosetshenziswa ngemva kokufakelwa kwe-ion ukuze kukhanye kabusha ukukhubazeka kwe-amorphous okudaleka ngesikhathi sokufakelwa, ukuze ama-athomu afakiwe angene endaweni yokushintsha futhi avulwe, njengoba kubonisiwe. Emdwebeni 5. Njengamanje, ukuqonda kwabantu ngendlela yenqubo yokuhushulwa kusenomkhawulo. Ukulawula kanye nokuqonda okujulile kwenqubo yokudonsa i-anneal kungenye yezinto ezigxile ocwaningweni zokufakelwa kwe-ion esikhathini esizayo.
Umfanekiso 5 Umdwebo weSchematic woshintsho lokuhlelwa kwe-athomu ebusweni bendawo ye-silicon carbide ion yokufakelwa ngaphambi nangemva kokufakelwa kwe-ion, lapho i-V.siimele izikhala ze-silicon, i-VCimele izikhala zekhabhoni, Ciimele ama-athomu agcwalisa i-carbon, kanye no-Siiimelela ama-athomu okugcwalisa i-silicon
I-ion activation annealing ngokuvamile ihlanganisa ukukhishwa kwesithando somlilo, ukuhushula ngokushesha nokuhunyushwa nge-laser. Ngenxa yokuncishiswa kwama-athomu e-Si ezintweni ze-SiC, izinga lokushisa le-anneal ngokuvamile alidluli ku-1800 ℃; umkhathi wokuphefumula ngokuvamile wenziwa ngegesi engasebenzi noma i-vacuum. Ama-ion ahlukene adala izikhungo ezihlukene zokukhubazeka ku-SiC futhi adinga amazinga okushisa ahlukene okudonsa. Kusukela emiphumeleni eminingi yokuhlola, kungaphethwa ngokuthi ukuphakama kwezinga lokushisa le-anneal, liba likhulu izinga lokuvula (njengoba kukhonjisiwe kuMfanekiso 6).
Umfanekiso 6 Umthelela wezinga lokushisa le-anneal kuzinga lokuvula ugesi lokufakwa kwe-nitrogen noma i-phosphorus ku-SiC (kwizinga lokushisa lekamelo)
(Isamba somthamo wokufakelwa 1×1014cm-2)
(Umthombo: Kimoto, Cooper, Okuyisisekelo Se-Silicon Carbide Technology: Ukukhula, Ukwenziwa Kwezinhlamvu, Amadivayisi, kanye Nezicelo)
Inqubo yokuvula i-acnealing evame ukusetshenziswa ngemva kokufakwa kwe-SiC ion yenziwa endaweni ye-Ar at 1600℃~1700℃ ukuze kuphinde kukhanye indawo ye-SiC futhi kusebenze i-dopant, ngaleyo ndlela kuthuthukiswe ukuqhutshwa kwendawo ene-doped; ngaphambi kokufakwa kwe-annealing, ungqimba lwefilimu yekhabhoni lungagcotshwa endaweni eyilutshwana ukuze kuvikelwe indawo engaphezulu ukuze kuncishiswe ukuwohloka kwendawo okubangelwa ukubola kwe-Si kanye nokufuduka kwe-athomu engaphezulu, njengoba kuboniswe kuMfanekiso 7; ngemva kokucwiliswa, ifilimu ye-carbon ingasuswa nge-oxidation noma ukugqwala.
Umfanekiso 7 Ukuqhathaniswa kobunzima obungaphezulu be-4H-SiC wafers noma ngaphandle kokuvikelwa kwefilimu ye-carbon ngaphansi kwezinga lokushisa le-annealing engu-1800 ℃.
(Umthombo: Kimoto, Cooper, Okuyisisekelo Se-Silicon Carbide Technology: Ukukhula, Ukwenziwa Kwezinhlamvu, Amadivayisi, kanye Nezicelo)
IV
Umthelela wokufakwa kwe-SiC ion kanye nenqubo yokuvula i-annealing
Ukufakwa kwe-ion kanye nokwenza kusebenze okulandelayo kuzokhiqiza iziphambeko ezinciphisa ukusebenza kwedivayisi: amaphoyinti ayinkimbinkimbi, amaphutha ekustaki (njengoba kuboniswe kuMfanekiso 8), ukugudluzwa okusha, ukukhubazeka kwezinga lamandla angajulile noma ajulile, amaluphu endiza eyisisekelo kanye nokunyakaza kokugudluka okukhona. Njengoba inqubo ye-ion bombardment enamandla kakhulu izobangela ukucindezeleka ku-wafer ye-SiC, inqubo yokufakelwa kwe-ion yokushisa ephezulu kanye namandla aphezulu izokwandisa i-wafer warpage. Lezi zinkinga seziphinde zaba isiqondiso esidinga ukuthuthukiswa ngokushesha futhi sifundwe enqubweni yokukhiqiza yokufakelwa kwe-SiC ion kanye nokudonsa.
Umfanekiso 8 Umdwebo weSchematic wokuqhathanisa phakathi kokuhlelwa kwe-lattice evamile ye-4H-SiC kanye namaphutha ahlukene wokupakisha.
(Umthombo: Nicolὸ Piluso 4H-SiC Defects)
V.
Ukuthuthukiswa kwenqubo yokufakelwa kwe-silicon carbide ion
(1) Ifilimu encane ye-oxide igcinwa endaweni yokufakelwa kwe-ion ukunciphisa izinga lokulimala kokufakelwa okubangelwa ukufakwa kwe-ion enamandla kakhulu ebusweni be-silicon carbide epitaxial layer, njengoba kuboniswe kuMfanekiso 9. (a) .
(2) Thuthukisa ikhwalithi yediski eqondiwe kumshini wokufakelwa kwe-ion, ukuze i-wafer nediski eqondiwe kulingane eduze, ukuqhutshwa kokushisa kwediski okuqondiwe kuyiwafa kuba ngcono, futhi okokusebenza kushisisa ngemuva kwewafa. ngokufanayo, ukuthuthukisa ikhwalithi yokufakelwa kwe-ion yokushisa ephezulu kanye namandla aphezulu kuma-silicon carbide wafers, njengoba kuboniswe kuMfanekiso 9. (b).
(3) Lungiselela izinga lokushisa lokunyuka kanye nokufana kwezinga lokushisa ngesikhathi sokusebenza kwemishini yokushisa ephezulu yokushisa.
Umfanekiso 9 Izindlela zokuthuthukisa inqubo yokufakelwa kwe-ion
Isikhathi sokuthumela: Oct-22-2024