Yiziphi izici ezibalulekile ze-SiC?

I-Silicon carbide (SiC)iyinto ebalulekile ebanzi ye-bandgap semiconductor esetshenziswa kabanzi kumadivayisi kagesi anamandla aphezulu kanye namaza aphezulu. Okulandelayo amanye amapharamitha angukhiye weama-wafers e-silicon carbidekanye nezincazelo zabo ezinemininingwane:

I-Lattice Parameters:
Qinisekisa ukuthi i-lattice constant ye-substrate ihambisana nongqimba lwe-epitaxial okufanele lukhuliswe ukuze kuncishiswe amaphutha nokucindezeleka.

Isibonelo, i-4H-SiC ne-6H-SiC zinezimo ezihlukile ze-lattice, ezithinta ikhwalithi yazo ye-epitaxial layer nokusebenza kwedivayisi.

Ukulandelana Kwesitaki:
I-SiC yakhiwe ama-athomu e-silicon nama-athomu ekhabhoni ngesilinganiso esingu-1:1 esikalini esikhulu, kodwa ukuhleleka kwezingqimba ze-athomu kuhlukile, okuzokwakha izakhiwo zekristalu ezihlukene.

Amafomu ekristalu avamile ahlanganisa i-3C-SiC (isakhiwo se-cubic), i-4H-SiC (isakhiwo se-hexagonal), kanye ne-6H-SiC (isakhiwo esinezinhlangothi ezine), kanye nokulandelana okuhambisanayo kokupakisha: ABC, ABCB, ABCACB, njll. izici kanye nezakhiwo ezibonakalayo, ngakho ukukhetha ifomu elifanele lekristalu kubalulekile ekusebenzeni okuthile.

Ukuqina kwe-Mohs: Inquma ubulukhuni be-substrate, obuthinta kalula ukucubungula nokumelana nokugqoka.
I-Silicon carbide inobunzima be-Mohs obuphezulu kakhulu, ngokuvamile phakathi kuka-9-9.5, okwenza kube yinto eqinile kakhulu efanelekile izinhlelo zokusebenza ezidinga ukumelana nokugqoka okuphezulu.

Ukuminyana: Kuthinta amandla emishini kanye nezakhiwo ezishisayo ze-substrate.
Ukuminyana okuphezulu ngokuvamile kusho amandla angcono wemishini kanye ne-thermal conductivity.

I-Thermal Expansion Coefficient: Ibhekisela ekwenyukeni kobude noma ivolumu ye-substrate ngokuhlobene nobude bangempela noma ivolumu lapho izinga lokushisa likhuphuka ngedigri Celsius eyodwa.
Ukulingana phakathi kwe-substrate kanye nongqimba lwe-epitaxial ngaphansi koshintsho lwezinga lokushisa kuthinta ukuzinza kokushisa kwedivayisi.

I-Refractive Index: Kuzinhlelo zokusebenza ze-optical, inkomba ye-refractive iyipharamitha eyinhloko ekwakhiweni kwamadivayisi we-optoelectronic.
Umehluko kunkomba ye-refractive ithinta isivinini kanye nendlela yamagagasi okukhanya kokubalulekile.

I-Dielectric Constant: Ithinta izici ze-capacitance zedivayisi.
I-dielectric constant ephansi isiza ukunciphisa amandla e-parasitic futhi ithuthukise ukusebenza kwedivayisi.

I-Thermal Conductivity:
Ibalulekile kuzinhlelo zokusebenza zamandla aphezulu kanye nezinga lokushisa eliphezulu, ezithinta ukusebenza kahle kokupholisa kwedivayisi.
I-thermal conductivity ephezulu ye-silicon carbide iyenza ifaneleke kahle kumadivayisi kagesi anamandla amakhulu ngoba ingakwazi ukuqhuba kahle ukushisa kude nedivayisi.

I-band-gap:
Isho umehluko wamandla phakathi kwengaphezulu lebhendi ye-valence kanye naphansi kwebhendi yokuqhuba kokokusebenza kwesemiconductor.
Izinto ezinegebe elibanzi zidinga amandla aphezulu ukuze kushukunyiswe ukuguqulwa kwama-electron, okwenza i-silicon carbide isebenze kahle ezindaweni ezishisa kakhulu nezinemisebe ephezulu.

Inkambu Yokuhlukana Kagesi:
I-voltage engumkhawulo i-semiconductor impahla engamelana nayo.
I-Silicon carbide inenkambu kagesi ephukile ephezulu kakhulu, eyivumela ukuthi imelane nama-voltage aphezulu kakhulu ngaphandle kokuphuka.

I-Saturation Drift Velocity:
Isivinini esimaphakathi esiphezulu esingafinyelelwa abathwali ngemva kokuba inkambu ethile kagesi isetshenziswe endaweni ye-semiconductor.

Uma amandla enkambu kagesi enyuka aze afike ezingeni elithile, ijubane lenkampani yenethiwekhi ngeke lisakhuphuka ngokuthuthukiswa okwengeziwe kwenkambu kagesi. Isivinini ngalesi sikhathi sibizwa ngokuthi i-saturation drift velocity. I-SiC inesivinini esikhulu sokukhukhuleka saturation, esizuzisa ukwenzeka kwezinto zikagesi ezinesivinini esikhulu.

Le mingcele ihlangene inquma ukusebenza nokusebenza kweAma-wafers e-SiCezinhlelweni ezihlukahlukene, ikakhulukazi lezo ezisemandleni aphezulu, imvamisa ephezulu kanye nezimo ezishisa kakhulu.