Yiziphi izinyathelo eziyinhloko ekucutshungulweni kwama-substrates e-SiC?

 

Sikhiqiza kanjani izinyathelo zokucubungula ama-substrates e-SiC zimi kanje:

 

1. I-Crystal Orientation:

Ukusebenzisa i-X-ray diffraction ukuze uqondise i-crystal ingot. Uma i-X-ray beam iqondiswe ebusweni bekristalu obufunwayo, i-engeli ye-diffracted beam inquma umumo wekristalu.

 

2. Ukugaya Ububanzi Bangaphandle:

Amakristalu angawodwa akhule ezitsheni zegraphite ngokuvamile adlula amadayamitha ajwayelekile. Ukugaya ububanzi bangaphandle kuyawehlisa abe osayizi abajwayelekile.

 

 

3.Qeda Ukugaya Ubuso:

Ama-substrates angu-4-intshi 4H-SiC ngokuvamile anemiphetho emibili yokuma, eyinhloko neyesibili. Ukuqeda ukugaya kobuso kuvula le miphetho yokuma.

 

4. Ukusaha ngocingo:

Ukusaha ngocingo kuyisinyathelo esibalulekile ekucubunguleni ama-substrates e-4H-SiC. Imifantu nomonakalo ongaphansi komhlaba odalwe ngesikhathi sokusaha ngocingo kuba nomthelela ongemuhle ezinqubweni ezilandelayo, ukwelula isikhathi sokucubungula futhi kubangele ukulahleka kwempahla. Indlela ejwayeleke kakhulu ukusaha ngezintambo eziningi nge-diamond abrasive. Ukunyakaza okuphindaphindayo kwezintambo zensimbi eziboshwe ngama-abrasive edayimane kusetshenziswa ukusika ingot engu-4H-SiC.

 

5. I-Chamfering:

Ukuze uvimbele ukuchotshozwa konqenqema kanye nokunciphisa ukulahlekelwa okusebenzisekayo phakathi nezinqubo ezilandelayo, imiphetho ebukhali yama-chips asawnwe ngocingo ayashintshwa abe yizimo ezithile.

 

6. Ukunciphisa:

Ukusaha ngocingo kushiya imihuzuko eminingi kanye nomonakalo ongaphansi komhlaba. Ukucwenga kwenziwa kusetshenziswa amasondo edayimane ukususa lezi ziphambeko ngangokunokwenzeka.

 

7. Ukugaya:

Le nqubo ihlanganisa ukugaya nokugaya kahle kusetshenziswa usayizi omncane we-boron carbide noma ama-abrasives edayimane ukuze kususwe umonakalo osalayo kanye nokulimala okusha okwethulwa ngesikhathi sokuncipha.

 

8. Ukupholisha:

Izinyathelo zokugcina zifaka ukupholishwa okungalungile kanye nokupholishwa okuhle kusetshenziswa ama-alumina noma ama-silicon oxide abrasives. Uketshezi olupholishwayo luthambisa indawo engaphezulu, esuke ikhishwa ngomshini ngama-abrasives. Lesi sinyathelo siqinisekisa indawo ebushelelezi futhi engonakalisiwe.

 

9. Ukuhlanza:

Ukukhipha izinhlayiya, izinsimbi, amafilimu e-oxide, izinsalela zezinto eziphilayo, nokunye ukungcola okusele ezinyathelweni zokucubungula.