Yiziphi izinyathelo eziyinhloko ekucutshungulweni kwama-substrates e-SiC?

Sikhiqiza kanjani izinyathelo zokucubungula ama-substrates e-SiC zimi kanje:

1. I-Crystal Orientation: Ukusebenzisa i-X-ray diffraction ukuze uqondise i-crystal ingot.Uma i-X-ray beam iqondiswe ebusweni bekristalu obufunwayo, i-engeli ye-diffracted beam inquma umumo wekristalu.

2. Ukugaya Udayamitha Wangaphandle: Amakristalu awodwa akhule ezitsheni ze-graphite ngokuvamile edlula amadayamitha ajwayelekile.Ukugaya ububanzi bangaphandle kuyawehlisa abe osayizi abajwayelekile.

Qeda Ukugaya Ubuso: Ama-substrates angu-4-inch 4H-SiC ngokuvamile anemiphetho emibili yokuma, eyinhloko neyesibili.Ukuqeda ukugaya kobuso kuvula le miphetho yokuma.

3. Ukusaha ngocingo: Ukusaha ngocingo kuyisinyathelo esibalulekile ekucubunguleni ama-substrates e-4H-SiC.Imifantu nomonakalo ongaphansi komhlaba odalwe ngesikhathi sokusaha ngocingo kuba nomthelela ongemuhle ezinqubweni ezilandelayo, ukwelula isikhathi sokucubungula futhi kubangele ukulahleka kwempahla.Indlela ejwayeleke kakhulu ukusaha ngezintambo eziningi nge-diamond abrasive.Ukunyakaza okuphindaphindayo kwezintambo zensimbi eziboshwe ngama-abrasive edayimane kusetshenziswa ukusika ingot engu-4H-SiC.

4. I-Chamfering: Ukuze uvimbele ukuchotshozwa konqenqema nokunciphisa ukulahlekelwa okusebenzisekayo phakathi nezinqubo ezilandelayo, imiphetho ecijile yama-chips asanwe ngocingo ayashintshwa abe yizimo ezithile.

5. Ukunciphisa: Ukusaha ngocingo kushiya imihuzuko eminingi kanye nomonakalo ongaphansi komhlaba.Ukucwenga kwenziwa kusetshenziswa amasondo edayimane ukususa lezi ziphambeko ngangokunokwenzeka.

6. Ukugaya: Le nqubo ihlanganisa ukugaya nokugaya kahle kusetshenziswa usayizi omncane we-boron carbide noma ama-abrasives edayimane ukuze kususwe umonakalo osalayo kanye nomonakalo omusha owethulwe ngesikhathi sokuncipha.

7. Ukupholisha: Izinyathelo zokugcina zibandakanya ukupholishwa okungalungile kanye nokupholishwa okuhle kusetshenziswa ama-alumina noma ama-silicon oxide abrasives.Uketshezi olupholishwayo luthambisa indawo engaphezulu, esuke ikhishwa ngomshini ngama-abrasives.Lesi sinyathelo siqinisekisa indawo ebushelelezi futhi engonakalisiwe.

8. Ukuhlanza: Ukukhipha izinhlayiya, izinsimbi, amafilimu e-oxide, izinsalela zezinto eziphilayo, nokunye ukungcola okushiywe ezinyathelweni zokucubungula.

I-SiC epitaxy (2) - 副本(1)(1)


Isikhathi sokuthumela: May-15-2024