Ukukhula kwe-Epitaxial ubuchwepheshe obukhulisa ungqimba olulodwa lwekristalu ku-crystal substrate eyodwa (i-substrate) ene-crystal orientation efana ne-substrate, njengokungathi i-crystal yasekuqaleni inwetshiwe ngaphandle.Lesi sendlalelo sekristalu esanda kukhula singahluka ku-substrate ngokohlobo lwe-conductivity, resistivity, njll., futhi singakhula amakristalu anezendlalelo eziningi ezinobukhulu obuhlukene kanye nezidingo ezihlukene, ngaleyo ndlela kuthuthukisa kakhulu ukuguquguquka komklamo wedivayisi nokusebenza kwedivayisi.Ngaphezu kwalokho, inqubo ye-epitaxial iphinde isetshenziswe kabanzi kubuchwepheshe bokuhlukaniswa kwe-PN junction kumasekethe ahlanganisiwe nasekuthuthukiseni ikhwalithi yezinto ezibonakalayo kumasekethe amakhulu ahlanganisiwe.
Ukuhlukaniswa kwe-epitaxy ngokuyinhloko kusekelwe ekwakhiweni kwamakhemikhali okuhlukene kwe-substrate nesendlalelo se-epitaxial kanye nezindlela ezihlukene zokukhula.
Ngokusho kwezinhlobo ezahlukene zamakhemikhali, ukukhula kwe-epitaxial kungahlukaniswa ngezinhlobo ezimbili:
1. I-Homoepitaxial: Kulokhu, ungqimba lwe-epitaxial lunokwakheka kwamakhemikhali okufanayo njenge-substrate.Isibonelo, izingqimba ze-silicon epitaxial zitshalwa ngqo kuma-silicon substrates.
2. I-Heteroepitaxy: Lapha, ukwakheka kwamakhemikhali ongqimba lwe-epitaxial kuhlukile kulokho kwe-substrate.Isibonelo, ungqimba lwe-gallium nitride epitaxial lutshalwe ku-substrate yesafire.
Ngokwezindlela ezihlukene zokukhula, ubuchwepheshe bokukhula kwe-epitaxial bungahlukaniswa ngezinhlobo ezahlukahlukene:
1. I-Molecular beam epitaxy (MBE): Lobu ubuchwepheshe bokukhulisa amafilimu amancane ekristalu eyodwa ku-substrate yekristalu eyodwa, okufinyelelwa ngokulawula ngokunembile izinga lokugeleza kwe-molecular beam kanye nokuminyana kwe-beam ku-vacuum ephezulu kakhulu.
2. I-Metal-organic chemical vapor deposition (MOCVD): Lobu buchwepheshe busebenzisa izinhlanganisela zensimbi-organic kanye nama-reagents wesigaba segesi ukwenza ukusabela kwamakhemikhali emazingeni okushisa aphezulu ukuze kukhiqizwe izinto zefilimu ezacile ezidingekayo.Isebenza kabanzi ekulungiseleleni izinto zokwakha ezihlanganisiwe ze-semiconductor namadivayisi.
3. I-Liquid phase epitaxy (LPE): Ngokungeza izinto eziwuketshezi ku-crystal substrate eyodwa nokwenza ukwelashwa kokushisa ezingeni elithile lokushisa, uketshezi oluwuketshezi luyacwebezela kwakheka ifilimu yekristalu eyodwa.Amafilimu alungiselelwe lobu buchwepheshe afaniswa ne-lattice ne-substrate futhi avame ukusetshenziselwa ukulungisa izinto ezihlanganisiwe ze-semiconductor kanye namadivayisi.
4. I-Vapor phase epitaxy (VPE): Isebenzisa ama-reactants anegesi ukwenza ukusabela kwamakhemikhali emazingeni okushisa aphezulu ukuze kukhiqizwe izinto zefilimu ezacile ezidingekayo.Lobu buchwepheshe bufanele ukulungiselela indawo enkulu, amafilimu e-crystal eyodwa, futhi buvelele kakhulu ekulungiseleleni izinto ezihlanganisiwe ze-semiconductor kanye namadivayisi.
5. I-Chemical beam epitaxy (CBE): Lobu buchwepheshe busebenzisa imishayo yamakhemikhali ukuze kukhule amafilimu ekristalu eyodwa kuma-substrates ekristalu eyodwa, okufinyelelwa ngokulawula ngokunembile izinga lokugeleza kwe-chemical beam kanye nokuminyana kwe-beam.Inezinhlelo zokusebenza ezibanzi ekulungiseleleni amafilimu amancane ekristalu elilodwa elisezingeni eliphezulu.
6. I-epitaxy yesendlalelo se-athomu (ALE): Kusetshenziswa ubuchwepheshe bokubekwa kongqimba lwe-athomu, izinto zefilimu ezacile ezidingekayo zifakwa isendlalelo ngesendlalelo ku-crystal substrate eyodwa.Lobu buchwepheshe bungalungiselela indawo enkulu, amafilimu ekristalu eyodwa esezingeni eliphakeme futhi kuvame ukusetshenziselwa ukulungisa izinto ezihlanganisiwe ze-semiconductor namadivayisi.
7. I-Hot wall epitaxy (HWE): Ngokushisisa izinga lokushisa eliphezulu, ama-reactants egesi afakwa ku-crystal substrate eyodwa ukuze akhe ifilimu yekristalu eyodwa.Lobu buchwepheshe bufanele futhi ukulungiselela indawo enkulu, amafilimu e-crystal eyodwa, futhi isetshenziswa ikakhulukazi ekulungiseleleni izinto ezihlanganisiwe ze-semiconductor namadivayisi.
Isikhathi sokuthumela: May-06-2024