Iyini i-epitaxy?

Onjiniyela abaningi ababazii-epitaxy, edlala indima ebalulekile ekukhiqizeni idivayisi ye-semiconductor.I-Epitaxyingasetshenziswa emikhiqizweni ehlukene ye-chip, futhi imikhiqizo ehlukene inezinhlobo ezahlukene ze-epitaxy, kuhlanganiseI-epitaxy, I-SiC epitaxy, I-GaN epitaxy, njll.

Iyini i-epitaxy?
I-Epitaxy ivamise ukubizwa nge-“Epitaxy” ngesiNgisi. Igama livela kwelesiGreki elithi “epi” (elisho “phezulu”) nelithi “amatekisi” (elisho “uhlelo”). Njengoba igama liphakamisa, lisho ukuhlela ngobunono phezu kwento. Inqubo ye-epitaxy iwukufaka ungqimba oluncane lwekristalu olulodwa ku-substrate yekristalu eyodwa. Lolu ungqimba lwekristalu olusanda kufakwa lubizwa ngokuthi i-epitaxial layer.

Kunezinhlobo ezimbili eziyinhloko ze-epitaxy: i-homoepitaxial ne-heteroepitaxial. I-Homoepitaxial isho ukukhulisa into efanayo ohlotsheni olufanayo lwe-substrate. Isendlalelo se-epitaxial kanye ne-substrate inesakhiwo esifanayo se-lattice. I-Heteroepitaxy ukukhula kwenye into ku-substrate yento eyodwa. Kulokhu, isakhiwo se-lattice se-crystal layer ekhulile epitaxially kanye ne-substrate ingase ihluke. Ayini amakristalu awodwa kanye ne-polycrystalline?
Kuma-semiconductors, sivame ukuzwa amagama athi i-crystal silicon eyodwa ne-polycrystalline silicon. Kungani amanye ama-silicon abizwa ngokuthi amakristalu angashadile kanye ne-silicon ebizwa ngokuthi i-polycrystalline?

I-crystal eyodwa: Ukuhlelwa kwe-lattice kuyaqhubeka futhi akuguquki, ngaphandle kwemingcele yokusanhlamvu, okungukuthi, yonke i-crystal yakhiwe nge-lattice eyodwa ene-crystal orientation engaguquki. I-Polycrystalline: I-Polycrystalline yakhiwe ngezinhlamvu eziningi ezincane, ngayinye eyikristalu eyodwa, futhi ukuma kwayo kuyenzeka ngokungahleliwe ngokuhloniphana. Lezi zinhlamvu zihlukaniswa ngemingcele yokusanhlamvu. Izindleko zokukhiqiza zezinto ze-polycrystalline ziphansi kunalezo zekristalu eyodwa, ngakho-ke zisawusizo kwezinye izinhlelo zokusebenza. Ngabe inqubo ye-epitaxial izobandakanyeka kuphi?
Ekwenziweni kwamasekethe ahlanganisiwe asuselwa ku-silicon, inqubo ye-epitaxial isetshenziswa kabanzi. Isibonelo, i-silicon epitaxy isetshenziselwa ukukhulisa ungqimba lwe-silicon oluhlanzekile futhi olulawulwa kahle ku-silicon substrate, ebaluleke kakhulu ekwenzeni amasekethe ahlanganisiwe athuthukile. Ngaphezu kwalokho, kumadivayisi kagesi, i-SiC ne-GaN yizinto ezimbili ezivame ukusetshenziswa ezibanzi ze-bandgap semiconductor ezinamandla amakhulu okubamba amandla. Lezi zinto ngokuvamile zitshalwa ku-silicon noma amanye ama-substrates ngokusebenzisa i-epitaxy. Ekuxhumaneni kwe-quantum, ama-quantum bits asekelwe ku-semiconductor ngokuvamile asebenzisa izakhiwo ze-silicon germanium epitaxial. njll.

Izindlela zokukhula kwe-epitaxial?

Izindlela ezintathu ezivame ukusetshenziswa ze-semiconductor epitaxy:

I-Molecular beam epitaxy (MBE): I-Molecular beam epitaxy) ubuchwepheshe bokukhula kwe-semiconductor epitaxial okwenziwa ngaphansi kwezimo ze-vacuum eziphezulu kakhulu. Kulobu buchwepheshe, into ewumthombo iyahwamuka ngendlela yama-athomu noma imishayo yamangqamuzana bese ifakwa ku-crystalline substrate. I-MBE iwubuchwepheshe obunembe kakhulu futhi obulawulekayo bokukhula kwefilimu encane ye-semiconductor engalawula ngokunembile ukushuba kwezinto ezifakiwe ezingeni le-athomu.

I-Metal organic CVD (MOCVD): Enqubweni ye-MOCVD, izinsimbi eziphilayo kanye namagesi e-hydride aqukethe izakhi ezidingekayo anikezwa ku-substrate ngezinga lokushisa elifanele, futhi izinto ezidingekayo ze-semiconductor zikhiqizwa ngokuhlangana kwamakhemikhali futhi zifakwe ku-substrate, kuyilapho okusele. ama-compounds kanye nemikhiqizo yokusabela iyakhishwa.

I-Vapor Phase Epitaxy (VPE): I-Vapor Phase Epitaxy ubuchwepheshe obubalulekile obuvame ukusetshenziswa ekukhiqizeni amadivayisi we-semiconductor. Umgomo wayo oyisisekelo ukuthutha umhwamuko wento eyodwa noma inhlanganisela yegesi yesiphathi bese ufaka amakristalu endaweni engaphansi ngokusabela kwamakhemikhali.