Enqubweni yokulungiselela i-wafer, kunezixhumanisi ezimbili eziyinhloko: enye iwukulungiswa kwe-substrate, kanti enye iwukuqaliswa kwenqubo ye-epitaxial. I-substrate, i-wafer eyakhiwe ngokucophelela kusukela ku-semiconductor single crystal material, ingafakwa ngokuqondile enqubweni yokukhiqiza i-wafer njengesisekelo sokukhiqiza amadivaysi e-semiconductor, noma ingathuthukiswa ngokuqhubekayo ngezinqubo ze-epitaxial.
Ngakho-ke, yini i-denotation? Ngamafuphi, i-epitaxy ukukhula kongqimba olusha lwekristalu eyodwa ku-substrate yekristalu eyodwa ecutshungulwe kahle (ukusika, ukugaya, ukupholisha, njll.). Lesi sendlalelo esisha sekristalu esisodwa kanye ne-substrate kungenziwa ngezinto ezifanayo noma izinto ezihlukile, ukuze ukukhula okulinganayo noma okungafani ne-heteroepitaxial kufinyelelwe njengoba kudingeka. Ngenxa yokuthi ungqimba lwekristalu olusanda kukhula luzokhula ngokwesigaba sekristalu se-substrate, lubizwa ngokuthi ungqimba lwe-epitaxial. Ukujiya kwayo ngokuvamile kungama-microns ambalwa kuphela. Uma sithatha i-silicon njengesibonelo, ukukhula kwe-silicon epitaxial ukukhulisa ungqimba lwe-silicon olune-crystal orientation efana ne-substrate, ukumelana nokuqina nokuqina, ku-silicon single crystal substrate enomumo othile wekristalu. I-silicon single crystal layer enesakhiwo esiphelele se-lattice. Lapho ungqimba lwe-epitaxial lukhulile ku-substrate, yonke ibizwa ngokuthi i-epitaxial wafer.
Embonini yendabuko ye-silicon semiconductor, ukukhiqiza imvamisa ephezulu kanye namadivayisi anamandla aphezulu ngqo kuma-silicon wafers azohlangabezana nezinkinga ezithile zobuchwepheshe. Isibonelo, izidingo ze-voltage ephezulu yokuwohloka, ukumelana nochungechunge oluncane kanye nokwehla kwe-voltage encane yokugcwala endaweni yokuqoqa kunzima ukufeza. Ukwethulwa kobuchwepheshe be-epitaxy kuzixazulula ngobuhlakani lezi zinkinga. Isixazululo ukukhulisa ungqimba lwe-epitaxial olumelana kakhulu ne-silicon substrate eqinile, bese wenza amadivayisi kungqimba lwe-epitaxial olumelana kakhulu. Ngale ndlela, i-high-resistivity epitaxial layer ihlinzeka nge-voltage ephezulu yokuwohloka kwedivayisi, kuyilapho i-substrate engaphansi kwe-resistivity inciphisa ukumelana ne-substrate, ngaleyo ndlela inciphise ukwehla kwamandla kagesi, ngaleyo ndlela kuzuzwe i-voltage ephezulu yokuphuka kanye nebhalansi encane phakathi kokumelana ne-substrate. ukwehla kwe-voltage encane.
Ngaphezu kwalokho, ubuchwepheshe be-epitaxy obufana ne-vapor phase epitaxy kanye ne-liquid phase epitaxy ye-GaAs nezinye i-III-V, II-VI nezinye izinto ze-molecular compound semiconductor materials nazo ziye zathuthukiswa kakhulu futhi zaba yisisekelo samadivayisi amaningi we-microwave, amadivaysi e-optoelectronic namandla. amadivaysi. Ubuchwepheshe benqubo obubalulekile bokukhiqiza, ikakhulukazi ukusetshenziswa ngempumelelo kwe-molecular beam kanye nobuchwepheshe be-metal-organic vapor phase epitaxy ezingqimbeni ezincanyana, ama-superlattice, imithombo ye-quantum, ama-superlattice agxilile, kanye ne-atomic-layer epitaxy yezinga le-athomu sekuphenduke insimu entsha yocwaningo lwe-semiconductor. Ukuthuthukiswa kwe-“Energy Belt Project” sekubeke isisekelo esiqinile.
Ngokuqondene namadivayisi we-semiconductor yesizukulwane sesithathu, cishe wonke amadivaysi anjalo e-semiconductor enziwa kungqimba lwe-epitaxial, futhi i-silicon carbide wafer ngokwayo isebenza njenge-substrate kuphela. Ugqinsi lwempahla ye-SiC epitaxial, ukugxilwa kwenkampani yenethiwekhi yangemuva neminye imingcele inquma ngokuqondile izici ezihlukahlukene zikagesi zamadivayisi we-SiC. Imishini ye-silicon carbide yezinhlelo zokusebenza zamandla kagesi aphezulu ibeka phambili izidingo ezintsha zamapharamitha njengobukhulu bezinto ze-epitaxial kanye nokugxila kwenkampani yenethiwekhi yangemuva. Ngakho-ke, ubuchwepheshe be-silicon carbide epitaxial budlala indima ebalulekile ekusebenziseni ngokugcwele ukusebenza kwamadivayisi we-silicon carbide. Ukulungiswa cishe kwawo wonke amadivaysi kagesi e-SiC kusekelwe kumawafa e-SiC epitaxial ekhwalithi ephezulu. Ukukhiqizwa kwezingqimba ze-epitaxial yingxenye ebalulekile yemboni ye-bandgap semiconductor ebanzi.
Isikhathi sokuthumela: May-06-2024