Izindaba Zemboni

  • Izolo, iScience and Technology Innovation Board ikhiphe isimemezelo sokuthi i-Huazhuo Precision Technology inqamule i-IPO yayo!

    Usanda kumemezela ukulethwa kwemishini yokuqala engu-8-intshi ye-SIC ye-laser annealing e-China, okubuye kube ubuchwepheshe be-Tsinghua; Kungani bazihoxisa ngokwabo izinto zokwakha? Amagama ambalwa nje: Okokuqala, imikhiqizo ihluke kakhulu! Uma uthi nhlá, angazi ukuthi benzani. Okwamanje, u-H...
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  • I-CVD silicon carbide coating-2

    I-CVD silicon carbide coating-2

    I-CVD silicon carbide coating 1. Kungani kune-silicon carbide coating Ungqimba lwe-epitaxial ifilimu ethile encane eyikristalu ekhule ngesisekelo se-wafer ngenqubo ye-epitaxial. I-wafer ye-substrate kanye nefilimu encane ye-epitaxial ngokuhlangene ibizwa ngokuthi ama-epitaxial wafers. Phakathi kwabo,...
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  • Ukulungiselela inqubo yokuhlanganisa i-SIC

    Ukulungiselela inqubo yokuhlanganisa i-SIC

    Njengamanje, izindlela zokulungiselela ze-SiC coating ikakhulukazi zifaka indlela ye-gel-sol, indlela yokushumeka, indlela yokufaka ibhulashi, indlela yokufafaza nge-plasma, indlela yokusabela komphunga wamakhemikhali (CVR) kanye nendlela yokubeka umhwamuko wamakhemikhali (CVD). Indlela yokushumekaLe ndlela iwuhlobo lwezinga eliphezulu lokushisa...
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  • I-CVD Silicon Carbide Coating-1

    I-CVD Silicon Carbide Coating-1

    Iyini i-CVD SiC Chemical vapor deposition (CVD) inqubo yokufaka i-vacuum esetshenziselwa ukukhiqiza izinto eziqinile ezihlanzekile. Le nqubo ivame ukusetshenziswa emkhakheni wokukhiqiza i-semiconductor ukwenza amafilimu amancanyana phezu kwama-wafers. Enqubweni yokulungiselela i-SiC nge-CVD, i-substrate iphelelwa yisikhathi...
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  • Ukuhlaziywa kwesakhiwo sokugudluka ku-SiC crystal ngokulingisa ukulandelwa kwe-ray kusizwa i-X-ray imaging topological

    Ukuhlaziywa kwesakhiwo sokugudluka ku-SiC crystal ngokulingisa ukulandelwa kwe-ray kusizwa i-X-ray imaging topological

    Isizinda socwaningo Ukubaluleka kokusetshenziswa kwe-silicon carbide (SiC): Njengempahla ye-semiconductor ye-bandgap ebanzi, i-silicon carbide idonse ukunaka okukhulu ngenxa yezakhiwo zayo zikagesi ezinhle kakhulu (ezifana ne-bandgap enkulu, isivinini sokugcwala kwama-electron aphezulu kanye nokushintshwa kwe-thermal). Lezi zinhlelo...
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  • Inqubo yokulungiselela ikristalu yembewu ekukhuleni kwekristalu eyodwa ye-SiC 3

    Inqubo yokulungiselela ikristalu yembewu ekukhuleni kwekristalu eyodwa ye-SiC 3

    Ukuqinisekiswa KokukhulaAmakristalu embewu ye-silicon carbide (SiC) alungiswa ngokulandela inqubo echaziwe futhi aqinisekiswa ngokukhula kwekristalu ye-SiC. Iplathifomu yokukhula esetshenzisiwe kwakuyisithando somlilo esithuthukisiwe se-SiC esinezinga lokushisa lokukhula lika-2200 ℃, ingcindezi yokukhula engu-200 Pa, kanye nesitshalo...
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  • Inqubo Yokulungiselela I-Crystal Yembewu ku-SiC Single Crystal Growth (Ingxenye 2)

    Inqubo Yokulungiselela I-Crystal Yembewu ku-SiC Single Crystal Growth (Ingxenye 2)

    2. Inqubo Yokuhlola 2.1 Ukuphulukiswa Kwefilimu EnamathelayoKwaqashelwa ukuthi ukudala ngokuqondile ifilimu yekhabhoni noma ukubopha ngephepha le-graphite kuma-wafer e-SiC anamathiselwe okunamathiselwe kwaholela ezinkingeni ezimbalwa: 1. Ngaphansi kwezimo ze-vacuum, ifilimu yokunamathisela kuma-wafer e-SiC yenza ukubukeka okufana nesikali ukusayina...
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  • Seed Crystal Preparation Process in SiC Single Crystal Growth

    Seed Crystal Preparation Process in SiC Single Crystal Growth

    Izinto ze-Silicon carbide (SiC) zinezinzuzo ze-bandgap ebanzi, ukuqhutshwa kokushisa okuphezulu, amandla enkambu ephukile ebucayi, kanye nesivinini esiphezulu se-electron drift, okuyenza ithembise kakhulu emkhakheni wokukhiqiza i-semiconductor. Amakristalu e-SiC single ngokuvamile akhiqizwa ngokusebenzisa ...
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  • Yiziphi izindlela zokupholisha i-wafer?

    Yiziphi izindlela zokupholisha i-wafer?

    Kuzo zonke izinqubo ezihilelekile ekwakhiweni kwe-chip, isiphetho sokugcina se-wafer izosikwa ibe yifa lomuntu ngamunye futhi ihlanganiswe emabhokisini amancane, avalelwe aveze izikhonkwane ezimbalwa kuphela. I-chip izohlolwa ngokusekelwe embundwini wayo, ukumelana, amanani amanje, kanye ne-voltage, kodwa akekho ozocabangela ...
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  • Ukwethulwa Okuyisisekelo Kwenqubo Yokukhula Kwe-SiC Epitaxial

    Ukwethulwa Okuyisisekelo Kwenqubo Yokukhula Kwe-SiC Epitaxial

    I-Epitaxial layer ifilimu ethize yekristalu eyodwa ekhule ku-wafer ngenqubo ye-ep ·itaxial, futhi i-substrate wafer nefilimu ye-epitaxial kuthiwa yi-epitaxial wafer. Ngokukhulisa ungqimba lwe-silicon carbide epitaxial ku-conductive silicon carbide substrate, i-silicon carbide homogeneous epitaxial...
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  • Amaphuzu abalulekile okulawulwa kwekhwalithi yenqubo yokupakisha ye-semiconductor

    Amaphuzu abalulekile okulawulwa kwekhwalithi yenqubo yokupakisha ye-semiconductor

    Amaphuzu Abalulekile Okulawulwa Kwekhwalithi Kunqubo Yokufaka I-Semiconductor Okwamanje, ubuchwepheshe benqubo yokupakisha kwe-semiconductor buye bathuthuka kakhulu futhi bathuthukiswa kakhulu. Kodwa-ke, ngokombono ophelele, izinqubo nezindlela zokupakishwa kwe-semiconductor azikafinyeleli kokuphelele kakhulu...
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  • Izinselelo kuNqubo yokupakisha yeSemiconductor

    Izinselelo kuNqubo yokupakisha yeSemiconductor

    Amasu amanje okufakwa kwe-semiconductor ayathuthuka kancane kancane, kodwa izinga lapho okokusebenza okuzenzakalelayo nobuchwepheshe okwamukelwa khona ekufakweni kwe-semiconductor linquma ngokuqondile ukufezeka kwemiphumela elindelekile. Izinqubo ezikhona zokupakisha ze-semiconductor zisahlupheka ngenxa...
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