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Yiziphi izici ezibalulekile ze-SiC?
I-Silicon carbide (SiC) iyinto ebalulekile ebanzi ye-bandgap semiconductor esetshenziswa kabanzi kumadivayisi kagesi anamandla aphezulu kanye namaza aphezulu. Okulandelayo amanye amapharamitha angukhiye wama-silicon carbide wafers kanye nezincazelo zawo ezinemininingwane: I-Lattice Parameters: Qinisekisa ukuthi...Funda kabanzi -
Kungani i-silicon eyodwa ye-crystal idinga ukugoqwa?
I-Rolling isho inqubo yokugaya ububanzi obungaphandle be-silicon single crystal rod ibe induku eyodwa yekristalu yobubanzi obudingekayo kusetshenziswa isondo lokugaya idayimane, futhi kugaywe indawo eyisithenjwa yonqenqema oluyisicaba noma umsele wokuma wenduku eyodwa yekristalu. I-surfac yobubanzi obungaphandle...Funda kabanzi -
Izinqubo Zokukhiqiza Izimpushana Ze-SiC Ezisezingeni Eliphezulu
I-Silicon carbide (SiC) iyinhlanganisela ye-inorganic eyaziwa ngezakhiwo zayo ezihlukile. I-SiC eyenzeka ngokwemvelo, eyaziwa ngokuthi i-moissanite, ayivamile. Ezisetshenziswa ezimbonini, i-silicon carbide ikhiqizwa kakhulu ngezindlela zokwenziwa.E-Semicera Semiconductor, sisebenzisa ubuchwepheshe obuthuthukisiwe...Funda kabanzi -
Ukulawulwa kokufana kwe-radial resistivity ngesikhathi sokudonsa kwekristalu
Izizathu eziyinhloko ezithinta ukufana kwe-radial resistivity yamakristalu awodwa ukucaba kwesixhumi esibonakalayo esiwuketshezi oluqinile kanye nomthelela omncane wendiza ngesikhathi sokukhula kwekristalu Ithonya lokucaba kwesixhumi esibonakalayo esiqinile-soketshezi Ngesikhathi sokukhula kwekristalu, uma ukuncibilika kushukunyiswa ngokulinganayo. , i...Funda kabanzi -
Kungani i-magnetic field single crystal furnace ingathuthukisa ikhwalithi yekristalu eyodwa
Njengoba i-crucible isetshenziswa njengesiqukathi futhi kukhona i-convection ngaphakathi, njengoba usayizi wekristalu eyodwa okhiqizwayo ukhula, ukuguqulwa kokushisa kanye nokufana kwezinga lokushisa kuba nzima kakhulu ukulawula. Ngokungeza inkambu kazibuthe ukwenza ukuncibilika kwe-conductive kusebenze ku-Lorentz force, i-convection ingaba...Funda kabanzi -
Ukukhula okusheshayo kwekristalu eyodwa ye-SiC kusetshenziswa umthombo wenqwaba we-CVD-SiC ngendlela ye-sublimation
Ukukhula Ngokushesha kwe-SiC Single Crystal Ukusebenzisa Umthombo Wenqwaba we-CVD-SiC Nge-Sublimation MethodNgokusebenzisa amabhulokhi e-CVD-SiC agaywe kabusha njengomthombo we-SiC, amakristalu e-SiC akhuliswe ngempumelelo ngenani elingu-1.46 mm/h ngendlela ye-PVT. I-crystal encane ye-micropipe ne-dislocation ye-crystal ekhulile ibonisa ukuthi ...Funda kabanzi -
Okuqukethwe Okuthuthukisiwe Nokuhunyushiwe ku-Silicon Carbide Epitaxial Growth Equipment
Ama-substrates e-Silicon carbide (SiC) anokukhubazeka okuningi okuvimbela ukucubungula okuqondile. Ukwakha ama-chip wafers, ifilimu ethile yekristalu eyodwa kufanele ikhule ku-substrate ye-SiC ngenqubo ye-epitaxial. Le filimu yaziwa ngokuthi yi-epitaxial layer. Cishe wonke amadivayisi we-SiC atholakala ku-epitaxial...Funda kabanzi -
Iqhaza Elibalulekile kanye Nezimo Zokusebenza Ze-SiC-Coated Graphite Susceptors ku-Semiconductor Manufacturing
I-Semicera Semiconductor ihlela ukukhulisa ukukhiqizwa kwezingxenye eziyinhloko zemishini yokukhiqiza ye-semiconductor emhlabeni jikelele. Ngo-2027, sihlose ukusungula ifekthri entsha yamamitha-skwele angama-20,000 enesamba sokutshalwa kwezimali kwezigidi ezingama-70 zama-USD. Enye yezingxenye zethu eziyinhloko, i-silicon carbide (SiC) wafer carr...Funda kabanzi -
Kungani sidinga ukwenza i-epitaxy kuma-silicon wafer substrates?
Ochungechungeni lwemboni ye-semiconductor, ikakhulukazi kuchungechunge lwezimboni ze-semiconductor yesizukulwane sesithathu (i-wide bandgap semiconductor), kukhona ama-substrates kanye nezendlalelo ze-epitaxial. Kuyini ukubaluleka kwe-epitaxial layer? Uyini umehluko phakathi kwe-substrate ne-substrate? I-substr ...Funda kabanzi -
Inqubo Yokukhiqiza I-Semiconductor - Etch Technology
Kudingeka amakhulu ezinqubo ukuze kuguqulwe iwafa ibe yisemiconductor. Enye yezinqubo ezibaluleke kakhulu i-etching - okungukuthi, ukuqopha amaphethini wesifunda esihle ku-wafer. Impumelelo yenqubo yokubhala incike ekulawuleni okuguquguqukayo okuhlukahlukene ngaphakathi kwebanga elimisiwe lokusabalalisa, kanye nokuhlanganisa ngakunye...Funda kabanzi -
I-Ideal Material Yezindandatho zokugxilisa ku-Plasma Etching Equipment: I-Silicon Carbide (SiC)
Emishinini yokuhlanganisa i-plasma, izingxenye ze-ceramic zidlala indima ebalulekile, okuhlanganisa nendandatho yokugxila. Indandatho yokugxilisa ingqondo, ebekwe eduze kwewafa futhi ithintane nayo ngokuqondile, ibalulekile ekugxiliseni i-plasma ku-wafer ngokusebenzisa i-voltage eringini. Lokhu kuthuthukisa i-un...Funda kabanzi -
Umthelela we-silicon carbide processing single crystal kukhwalithi ye-wafer surface
Amadivayisi kagesi weSemiconductor athatha isikhundla esibalulekile ezinhlelweni zikagesi zamandla, ikakhulukazi kumongo wokuthuthuka okusheshayo kobuchwepheshe obufana nobuhlakani bokwenziwa, ezokuxhumana ze-5G kanye nezimoto zamandla amasha, izidingo zokusebenza kwazo kube ...Funda kabanzi