Isaphulelo Esivamile Sogesi Esiphindwe Kabili I-Ceramic Silicon Carbide Sic Heating Element

Incazelo emfushane:

I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo.Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali.Ngakho-ke, i-SiC isetshenziswa kakhulu ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi banezidingo zabo ezikhethekile ku-SIC.Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuzivikela njll.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Siphishekela inkambiso yokuphatha ethi “Ikhwalithi iphakeme, Isevisi iphakeme kakhulu, Idumela ngeyokuqala”, futhi sizodala futhi sabelane ngempumelelo nawo wonke amaklayenti Esaphulelo Esijwayelekile Sogesi Esiphindwe kabili I-Ceramic Silicon Carbide Sic Heating Element, Amakhasimende kuqala!Noma ngabe yini oyidingayo, kufanele senze konke esingakwenza ukuze sikusize.Samukela ngemfudumalo amakhasimende avela emhlabeni wonke ukuthi abambisane nathi ukuze sithuthukiselane.
Siphishekela imfundiso yokuphatha ethi "Ikhwalithi iphakeme, Isevisi iphakeme kakhulu, Idumela lokuqala", futhi sizodala futhi sabelane ngempumelelo nawo wonke amakhasimendeI-China Silicon Carbide Sic Heating Element kanye ne-Electric Heating Elements, Uma unezicelo, pls Sithumele i-imeyili ngezimfuno zakho eziphelele, sizokunikeza Intengo Encintisanayo ethengiswa kakhulu Ngekhwalithi Ephezulu kanye Nesevisi Yezinga Lokuqala Elingenakuhlulwa!Singakunikeza amanani ancintisana kakhulu kanye nekhwalithi ephezulu, ngoba besingochwepheshe kakhulu!Ngakho-ke khumbula ukuthi ungangabazi ukuxhumana nathi.

Izinzuzo

Ukumelana nokushisa okuphezulu kwe-oxidation
Ukumelana ne-Corrosion okuhle kakhulu
Ukumelana okuhle kwe-Abrasion
I-coefficient ephezulu ye-conductivity yokushisa
Ukuzithambisa, ukuminyana okuphansi
Ukuqina okuphezulu
Umklamo ngokwezifiso.

I-HGF (2)
I-HGF (1)

Izinhlelo zokusebenza

-Inkundla ekwazi ukumelana nokugqokwa: ukubhodloza, ipuleti, umlomo wombhobho we-sandblasting, umugqa wesishingishane, umphongolo wokugaya, njll.
-Inkundla Yokushisa Ephakeme: I-siC Slab, Ishubhu Lokucisha Isithando, Ishubhu elikhazimulayo, i-crucible, i-Heating Element, i-roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikebhe se-SiC, i-Kiln car Structure, i-Setter, njll.
-I-Silicon Carbide Semiconductor: Isikebhe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion tube, i-wafer fork, ipuleti lokumunca, umgwaqo, njll.
-I-Silicon Carbide Seal Field: zonke izinhlobo zendandatho yokubeka uphawu, ukuthwala, i-bushing, njll.
-Inkambu ye-Photovoltaic: I-Cantilever Paddle, i-Grinding Barrel, i-Silicon Carbide Roller, njll.
-I-Lithium Battery Field

I-WAFER (1)

I-WAFER (2)

Izakhiwo Zomzimba ze-SiC

Impahla Inani Indlela
Ukuminyana 3.21 g/cc Sink-float kanye nobukhulu
Ukushisa okuqondile 0.66 J/g °K I-Pulsed laser flash
Amandla e-Flexural 450 MPa560 MPa 4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300°
Ukuqina kokuphuka 2.94 MPa m1/2 I-Microindentation
Ukuqina 2800 Vicker, 500g umthwalo
I-Elastic ModulusYoung's Modulus 450 GPA430 GPA 4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Usayizi wokusanhlamvu 2 - 10 µm I-SEM

Izakhiwo ezishisayo ze-SiC

I-Thermal Conductivity 250 W/m °K Indlela ye-Laser flash, RT
I-Thermal Expansion (CTE) 4.5 x 10-6 °K Izinga lokushisa legumbi lifika ku-950 °C, i-silica dilatometer

Imingcele Yezobuchwepheshe

Into Iyunithi Idatha
I-RBSiC(SiSiC) I-NBSiC I-SSiC I-RSiC I-OSIC
Okuqukethwe kwe-SiC % 85 75 99 99.9 ≥99
Okuqukethwe kwe-silicon yamahhala % 15 0 0 0 0
Izinga lokushisa eliphezulu lesevisi 1380 1450 1650 1620 1400
Ukuminyana g/cm3 3.02 2.75-2.85 3.08-3.16 2.65-2.75 2.75-2.85
I-porosity evulekile % 0 13-15 0 15-18 7-8
Amandla okugoba 20 ℃ Mpa 250 160 380 100 /
Amandla okugoba 1200 ℃ Mpa 280 180 400 120 /
I-modulus ye-elasticity 20 ℃ I-Gpa 330 580 420 240 /
I-modulus ye-elasticity 1200 ℃ I-Gpa 300 / / 200 /
Thermal conductivity 1200 ℃ W/mK 45 19.6 100-120 36.6 /
I-coefficient yokwanda kwe-thermal K-1X10-6 4.5 4.7 4.1 4.69 /
HV Kg/mm2 2115 / 2800 / /

I-CVD silicon carbide coating endaweni engaphandle yemikhiqizo ye-ceramic ye-silicon carbide ceramic ingafinyelela ubumsulwa obungaphezu kuka-99.9999% ukuze kuhlangatshezwane nezidingo zamakhasimende embonini ye-semiconductor.

Izithombe

I-WAFER (3)

I-WAFER (4)

I-WAFER (5) I-WAFER (6)

Siphishekela inkambiso yokuphatha ethi “Ikhwalithi iphakeme, Isevisi iphakeme kakhulu, Idumela ngeyokuqala”, futhi sizodala futhi sabelane ngempumelelo nawo wonke amaklayenti Esaphulelo Esijwayelekile Sogesi Esiphindwe kabili I-Ceramic Silicon Carbide Sic Heating Element, Amakhasimende kuqala!Noma ngabe yini oyidingayo, kufanele senze konke esingakwenza ukuze sikusize.Samukela ngemfudumalo amakhasimende avela emhlabeni wonke ukuthi abambisane nathi ukuze sithuthukiselane.
Isaphulelo EsijwayelekileI-China Silicon Carbide Sic Heating Element kanye ne-Electric Heating Elements, Uma unezicelo, pls Sithumele i-imeyili ngezimfuno zakho eziphelele, sizokunikeza Intengo Encintisanayo ethengiswa kakhulu Ngekhwalithi Ephezulu kanye Nesevisi Yezinga Lokuqala Elingenakuhlulwa!Singakunikeza amanani ancintisana kakhulu kanye nekhwalithi ephezulu, ngoba besingochwepheshe kakhulu!Ngakho-ke khumbula ukuthi ungangabazi ukuxhumana nathi.


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