I-Semicera's P-type SiC Substrate Wafer iyingxenye ebalulekile yokuthuthukisa amadivaysi e-elekthronikhi ne-optoelectronic athuthukile. Lawa mawafa aklanyelwe ngokukhethekile ukuhlinzeka ukusebenza okuthuthukisiwe ezindaweni ezinamandla amakhulu nezinezinga lokushisa eliphezulu, ukusekela isidingo esikhulayo sezingxenye ezisebenza kahle nezihlala isikhathi eside.
I-doping yohlobo lwe-P kumawafa ethu e-SiC iqinisekisa ukuqhutshwa kukagesi okuthuthukisiwe kanye nokuhamba kwenkampani yenethiwekhi. Lokhu kubenza bafaneleke kakhulu izinhlelo zokusebenza kugesi wamandla, ama-LED, namaseli e-photovoltaic, lapho ukulahlekelwa kwamandla aphansi nokusebenza kahle kubaluleke kakhulu.
Akhiwe ngamazinga aphakeme kakhulu okunemba nekhwalithi, amawafa e-Semicera ohlobo lwe-SiC anikezela ngokufana kwendawo enhle kakhulu kanye namazinga amancane amaphutha. Lezi zici zibalulekile ezimbonini lapho ukungaguquguquki nokuthembeka kubalulekile, njenge-aerospace, imboni yezimoto, kanye nemikhakha yamandla avuselelekayo.
Ukuzibophezela kwe-Semicera ekusunguleni nasekusebenzeni kahle kubonakala ohlotsheni lwethu lwe-P-SiC Substrate Wafer. Ngokuhlanganisa lawa mawafa enqubweni yakho yokukhiqiza, uqinisekisa ukuthi amadivayisi akho ayazuza ezintweni ezihlukile ezishisayo nezikagesi ze-SiC, okuzivumela ukuthi zisebenze ngempumelelo ngaphansi kwezimo eziyinselele.
Ukutshala imali ohlotsheni lwe-SiC Substrate Wafer ye-Semicera kusho ukukhetha umkhiqizo ohlanganisa isayensi yezinto ezisezingeni eliphezulu nobunjiniyela obucophelelayo. I-Semicera inikezelwe ekusekeleni isizukulwane esilandelayo sobuchwepheshe be-elekthronikhi kanye ne-optoelectronic, ihlinzeka ngezingxenye ezibalulekile ezidingekayo ukuze uphumelele embonini ye-semiconductor.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
