Uhlobo lwe-P-SiC Substrate Wafer

Incazelo emfushane:

I-Semicera's P-type SiC Substrate Wafer yakhelwe izinhlelo zokusebenza eziphezulu ze-electronic ne-optoelectronic. Lawa mawafa ahlinzeka ngokusebenza okukhethekile nokuzinza kwe-thermal, okuwenza alungele amadivayisi asebenza kahle kakhulu. Nge-Semicera, lindela ukunemba nokuthembeka kumawafa wakho we-SiC substrate wohlobo lwe-P.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Semicera's P-type SiC Substrate Wafer iyingxenye ebalulekile yokuthuthukisa amadivaysi e-elekthronikhi ne-optoelectronic athuthukile. Lawa mawafa aklanyelwe ngokukhethekile ukuhlinzeka ukusebenza okuthuthukisiwe ezindaweni ezinamandla amakhulu nezinezinga lokushisa eliphezulu, ukusekela isidingo esikhulayo sezingxenye ezisebenza kahle nezihlala isikhathi eside.

I-doping yohlobo lwe-P kumawafa ethu e-SiC iqinisekisa ukuqhutshwa kukagesi okuthuthukisiwe kanye nokuhamba kwenkampani yenethiwekhi. Lokhu kubenza bafaneleke kakhulu izinhlelo zokusebenza kugesi wamandla, ama-LED, namaseli e-photovoltaic, lapho ukulahlekelwa kwamandla aphansi nokusebenza kahle kubaluleke kakhulu.

Akhiwe ngamazinga aphakeme kakhulu okunemba nekhwalithi, amawafa e-Semicera ohlobo lwe-SiC anikezela ngokufana kwendawo enhle kakhulu kanye namazinga amancane amaphutha. Lezi zici zibalulekile ezimbonini lapho ukungaguquguquki nokuthembeka kubalulekile, njenge-aerospace, imboni yezimoto, kanye nemikhakha yamandla avuselelekayo.

Ukuzibophezela kwe-Semicera ekusunguleni nasekusebenzeni kahle kubonakala ohlotsheni lwethu lwe-P-SiC Substrate Wafer. Ngokuhlanganisa lawa mawafa enqubweni yakho yokukhiqiza, uqinisekisa ukuthi amadivayisi akho ayazuza ezintweni ezihlukile ezishisayo nezikagesi ze-SiC, okuzivumela ukuthi zisebenze ngempumelelo ngaphansi kwezimo eziyinselele.

Ukutshala imali ohlotsheni lwe-SiC Substrate Wafer ye-Semicera kusho ukukhetha umkhiqizo ohlanganisa isayensi yezinto ezisezingeni eliphezulu nobunjiniyela obucophelelayo. I-Semicera inikezelwe ekusekeleni isizukulwane esilandelayo sobuchwepheshe be-elekthronikhi kanye ne-optoelectronic, ihlinzeka ngezingxenye ezibalulekile ezidingekayo ukuze uphumelele embonini ye-semiconductor.

Izinto

Ukukhiqiza

Ucwaningo

Dummy

I-Crystal Parameters

I-Polytype

4H

Iphutha lokuma kobuso

<11-20 >4±0.15°

Amapharamitha kagesi

I-Dopant

n-uhlobo lweNitrojeni

Ukungazweli

0.015-0.025ohm · cm

Mechanical Parameters

Ububanzi

150.0±0.2mm

Ubukhulu

350±25 μm

Umumo oyisicaba oyinhloko

[1-100]±5°

Ubude obuyisicaba obuyisisekelo

47.5±1.5mm

Ifulethi lesibili

Lutho

I-TTV

≤5 μm

≤10 μm

≤15 μm

I-LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Khothama

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

I-Ra≤0.2nm (5μm*5μm)

Isakhiwo

Ukuminyana kwe-Micropipe

<1 eya/cm2

<10 kwe/cm2

<15 kwe/cm2

Ukungcola kwensimbi

≤5E10 ama-athomu/cm2

NA

I-BPD

≤1500 i-e/cm2

≤3000 i-e/cm2

NA

I-TSD

≤500 i-e/cm2

≤1000 i-e/cm2

NA

Ikhwalithi Yangaphambili

Ngaphambili

Si

Ukuqedwa kobuso

I-Si-face CMP

Izinhlayiya

≤60ea/wafer (usayizi≥0.3μm)

NA

Ukuklwebheka

≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi

Ubude obuqongelelwe≤2*Ububanzi

NA

Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola

Lutho

NA

Ama-Edge chips/indents/fracture/hex plate

Lutho

Izindawo ze-Polytype

Lutho

Indawo eqoqiwe≤20%

Indawo eqoqiwe≤30%

Ukumaka kwe-laser yangaphambili

Lutho

Ikhwalithi Emuva

Emuva ekupheleni

C-face CMP

Ukuklwebheka

≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi

NA

Ukukhubazeka kwasemuva (ama-edge chips/indents)

Lutho

Ukuhwalala emuva

I-Ra≤0.2nm (5μm*5μm)

Ukumaka kwe-laser emuva

1 mm (kusuka emaphethelweni aphezulu)

Umphetho

Umphetho

I-Chamfer

Ukupakisha

Ukupakisha

I-Epi-ilungile ngokufakwa kwe-vacuum

Ukupakishwa kwekhasethi le-multi-wafer

*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.

tech_1_2_size
Ama-wafers e-SiC

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