I-CVD Bulk Silicon Carbide (SiC)
Uhlolojikelele:I-CVDinqwaba ye-silicon carbide (SiC)iyinto efunwa kakhulu emishinini yokufaka i-plasma, izinhlelo zokusebenza ezisheshayo ezishisayo (RTP), nezinye izinqubo zokukhiqiza i-semiconductor. Izakhiwo zayo ezihlukile zomshini, amakhemikhali, kanye ne-thermal ziyenza ibe into efanelekile yokusetshenziswa kobuchwepheshe obuthuthukile obudinga ukunemba okuphezulu nokuqina.
Izicelo ze-CVD Bulk SiC:I-Bulk SiC ibalulekile embonini ye-semiconductor, ikakhulukazi ezinhlelweni ze-plasma etching, lapho izingxenye ezinjengezindandatho zokugxila, ama-showerheads egesi, izindandatho ezinqenqemeni, nama-platens ahlomula ekumelaneni nokugqwala okuvelele kwe-SiC kanye nokusebenza okushisayo. Ukusetshenziswa kwayo kufinyelela ku-I-RTPamasistimu ngenxa yekhono le-SiC lokukwazi ukumelana nokushintshashintsha kwezinga lokushisa ngokushesha ngaphandle kokuwohloka okukhulu.
Ngaphezu kwemishini yokufaka, i-CVDInani eliphakeme kakhulu lama-SiCithandwa ezithandweni zokusabalalisa kanye nezinqubo zokukhula kwekristalu, lapho ukuzinza okuphezulu kokushisa nokumelana nezindawo zamakhemikhali ezinokhahlo kudingeka. Lezi zibaluli zenza i-SiC ibe yinto ekhethwayo ekusetshenzisweni okufunwa kakhulu okubandakanya amazinga okushisa aphezulu namagesi abolayo, njengalawo aqukethe i-chlorine ne-fluorine.
Izinzuzo ze-CVD Bulk SiC Components:
•Ukuminyana Okuphezulu:Ngokuminyana okungu-3.2 g/cm³,Inani eliphakeme kakhulu lama-CVDizingxenye zimelana kakhulu nokugqoka kanye nomthelela wemishini.
•I-Superior Thermal Conductivity:Inikezela nge-thermal conductivity engu-300 W/m·K, inqwaba ye-SiC ilawula kahle ukushisa, iyenze ifaneleke izingxenye ezivezwe emijikelezweni yokushisa edlulele.
•Ukumelana Namakhemikhali Okukhethekile:Ukuphinda kusebenze kabusha okuphansi kwe-SiC ngamagesi okuhlanganisa, okuhlanganisa namakhemikhali e-chlorine nasekelwe ku-fluorine, kuqinisekisa ukuphila kwengxenye ende.
•Ukumelana Okulungisekayo: Inani eliphakeme kakhulu lama-CVDukumelana kungenziwa ngendlela oyifisayo phakathi kwebanga elingu-10⁻²–10⁴ Ω-cm, ikwenze ivumelane nezidingo zokukhiqiza eziqondile kanye ne-semiconductor.
•I-Thermal Expansion Coefficient:Nge-coefficient yokwandisa okushisayo engu-4.8 x 10⁻⁶/°C (25–1000°C), inqwaba ye-CVD i-SiC imelana nokushaqeka kokushisa, igcina ukuzinza kwe-dimensional ngisho naphakathi kwemijikelezo yokushisisa nokupholisa okusheshayo.
•Ukuqina ku-Plasma:Ukuchayeka ku-plasma namagesi asebenzayo akunakugwenywa ezinqubweni ze-semiconductor, kodwaInani eliphakeme kakhulu lama-CVDinikeza ukumelana okuphakeme nokugqwala nokuwohloka, kunciphisa imvamisa yokushintshwa kanye nezindleko zokunakekela zizonke.
Imininingwane Yezobuchwepheshe:
•Ububanzi:Kukhulu kuno-305 mm
•Ukungazweli:Ilungiseka phakathi kuka-10⁻²–10⁴ Ω-cm
•Ukuminyana:3.2 g/cm³
•I-Thermal Conductivity:300 W/m·K
•I-Thermal Expansion Coefficient:4.8 x 10⁻⁶/°C (25–1000°C)
Ukwenza ngendlela oyifisayo nokuvumelana nezimo:NgoI-Semicera Semiconductor, siyaqonda ukuthi zonke izinhlelo zokusebenza ze-semiconductor zingadinga ukucaciswa okuhlukile. Kungakho izingxenye zethu ze-CVD eziyinqwaba ze-SiC zenziwe ngendlela oyifisayo ngokugcwele, zinokumelana okulungisekayo kanye nobukhulu obufanelana nezidingo zemishini yakho. Kungakhathaliseki ukuthi uthuthukisa amasistimu akho e-plasma etching noma ufuna izingxenye ezihlala isikhathi eside ku-RTP noma izinqubo zokusabalalisa, inqwaba ye-CVD yethu ye-SiC iletha ukusebenza okungenakuqhathaniswa.
