I-SiC Coated Barrel Susceptor

I-SiC Coated Barel Susceptor Isithombe Esifakiwe

Incazelo emfushane:

I-Semicera inikeza uhla olubanzi lwezixhumi nezinto ze-graphite eziklanyelwe ama-epitaxy reactor ahlukahlukene.

Ngobambiswano lwamasu nama-OEM ahamba phambili embonini, ubungcweti bezinto ezibonakalayo, namandla okukhiqiza athuthukile, i-Semicera iletha imiklamo eklanyelwe ukuhlangabezana nezidingo ezithile zohlelo lwakho lokusebenza. Ukuzibophezela kwethu ekusebenzeni kahle kuqinisekisa ukuthi uthola izixazululo eziphelele zezidingo zakho ze-epitaxy reactor.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Inkampani yethu ihlinzekaUkufakwa kwe-SiCizinqubo zezinsizakalo ebusweni be-graphite, izitsha zobumba nezinye izinto ngendlela ye-CVD, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon akwazi ukusabela ekushiseni okuphezulu ukuze athole ama-molecule e-Sic ahlanzekile kakhulu, angafakwa phezu kwezinto ezimboziwe ukuze enzeIsendlalelo sokuvikela se-SiCyohlobo lwe-epitaxy barrel i-hy pnotic.

Izici eziyinhloko:

1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite

2. Ukumelana nokushisa okuphezulu & ukufana okushisayo

3. KuhleI-SiC crystal coatedindawo ebushelelezi

4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali

Imininingwane Eyinhloko yeI-CVD-SIC Coating

Izakhiwo ze-SiC-CVD
Isakhiwo Sekristalu	I-FCC β isigaba
Ukuminyana	g/cm³	3.21
Ukuqina	Vickers ubulukhuni	2500
Usayizi Wokusanhlamvu	μm	2~10
I-Chemical Purity	%	99.99995
Amandla Okushisa	J·kg-1 ·K-1	640
I-Sublimation Temperature	℃	2700
Amandla E-Felexural	I-MPa (RT 4-point)	415
I-Modulus Encane	I-Gpa (4pt bend, 1300℃)	430
I-Thermal Expansion (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300