I-Silicon carbide iwuhlobo olusha lwe-ceramics olusebenza ngezindleko eziphakeme kanye nezakhiwo ezinhle kakhulu zezinto ezibonakalayo. Ngenxa yezici ezinjengamandla aphezulu nobulukhuni, ukumelana nokushisa okuphezulu, ukuguquguquka okukhulu kokushisa kanye nokumelana nokubola kwamakhemikhali, i-Silicon Carbide icishe imelane nayo yonke into yamakhemikhali. Ngakho-ke, i-SiC isetshenziswa kabanzi ezimayini zikawoyela, amakhemikhali, imishini kanye ne-airspace, ngisho namandla enuzi kanye nezempi zinezidingo zabo ezikhethekile ku-SIC. Olunye uhlelo olujwayelekile esingalunikeza izindandatho zophawu lwepompo, i-valve nezikhali zokuvikela njll.
Siyakwazi ukuklama nokwenza ngokuvumelana nobukhulu bakho obuthile ngekhwalithi enhle nesikhathi sokuletha esinengqondo.
Aokuhle:
Ukumelana nokushisa okuphezulu kwe-oxidation
Ukumelana ne-Corrosion okuhle kakhulu
Ukumelana okuhle kwe-Abrasion
I-coefficient ephezulu ye-conductivity yokushisa
Ukuzithambisa, ukuminyana okuphansi
Ukuqina okuphezulu
Umklamo ngokwezifiso.
Izicelo:
-Inkundla engagqoki: ukubhodloza, ipuleti, umlomo wombhobho wesandblasting, umugqa wesishingishane, umgqomo wokugaya, njll.
-Inkundla Yokushisa Ephakeme: I-siC Slab, Ishubhu Lokucisha Isithando, Ishubhu elikhazimulayo, i-crucible, i-Heating Element, i-roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikebhe se-SiC, i-Kiln car Structure, i-Setter, njll.
-Inkundla ye-Bulletproof yezempi
-I-Silicon Carbide Semiconductor: Isikebhe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion tube, i-wafer fork, ipuleti lokumunca, umgwaqo, njll.
-I-Silicon Carbide Seal Field: zonke izinhlobo zendandatho yokubeka uphawu, ukuthwala, i-bushing, njll.
-Inkambu ye-Photovoltaic: I-Cantilever Paddle, i-Grinding Barrel, i-Silicon Carbide Roller, njll.
-I-Lithium Battery Field
Amapharamitha wobuchwepheshe:
I-Material Datasheet
材料Okubalulekile | I-R-SiC |
使用温度Izinga lokushisa lokusebenza (°C) | 1600°C (氧化气氛Imvelo ene-oxidizing) 1700°C (还原气氛Ukunciphisa imvelo) |
I-SiC含量Okuqukethwe kwe-SiC (%) | > 99 |
自由Si含量Okuqukethwe kwamahhala kwe-Si (%) | <0.1 |
体积密度Ukuminyana ngobuningi (g/cm3) | 2.60-2.70 |
气孔率I-porosity ebonakalayo (%) | < 16 |
抗压强度Amandla okuchoboza (MPa) | > 600 |
常温抗弯强度Amandla okugoba okubandayo (MPa) | 80-90 (20°C) |
高温抗弯强度Amandla okugoba ashisayo (MPa) | 90-100 (1400°C) |
热膨胀系数 I-Thermal expansion coefficient @1500°C (10-6/°C) | 4.70 |
导热系数I-Thermal conductivity @1200°C (W/m•K) | 23 |
杨氏模量I-Elastic modulus (GPA) | 240 |
抗热震性Ukumelana nokushaqeka okushisayo | 很好Kuhle ngokwedlulele |