I-Si Substrate eyenziwe yi-Semicera iyingxenye ebalulekile ekukhiqizweni kwamadivayisi asebenza kahle kakhulu e-semiconductor. Le substrate yenziwe nge-high-purity Silicon (Si), ihlinzeka ngokufana okuhlukile, ukuzinza, kanye nokusebenza okuhle kakhulu, okuyenza ilungele uhla olubanzi lwezinhlelo zokusebenza ezithuthukile embonini ye-semiconductor. Kungakhathaliseki ukuthi isetshenziswa ekukhiqizeni i-Si Wafer, i-SiC Substrate, i-SOI Wafer, noma i-SiN Substrate, i-Semicera Si Substrate iletha ikhwalithi engaguquki nokusebenza okuphezulu ukuze kuhlangatshezwane nezidingo ezikhulayo zama-electronics nesayensi yezinto ezibonakalayo.
Ukusebenza Okungafani Nokuhlanzeka Okuphezulu Nokunemba
I-Si Substrate ye-Semicera ikhiqizwa kusetshenziswa izinqubo ezithuthukisiwe eziqinisekisa ubumsulwa obuphezulu nokulawula okuqinile kwe-dimensional. I-substrate isebenza njengesisekelo sokukhiqizwa kwezinto ezihlukahlukene zokusebenza okuphezulu, okuhlanganisa i-Epi-Wafers kanye ne-AlN Wafers. Ukunemba nokufana kwe-Si Substrate kuyenza ibe yisinqumo esihle kakhulu sokudala izendlalelo ze-epitaxial zefilimu elincanyana nezinye izingxenye ezibalulekile ezisetshenziswa ekukhiqizeni ama-semiconductors esizukulwane esilandelayo. Kungakhathaliseki ukuthi usebenza ne-Gallium Oxide (Ga2O3) noma ezinye izinto ezithuthukisiwe, i-Si Substrate ye-Semicera iqinisekisa amazinga aphezulu okuthembeka nokusebenza.
Izicelo ku Semiconductor Manufacturing
Embonini ye-semiconductor, i-Si Substrate evela ku-Semicera isetshenziswa ohlelweni olubanzi lwezinhlelo zokusebenza, okuhlanganisa ukukhiqizwa kwe-Si Wafer kanye ne-SiC Substrate, lapho ihlinzeka ngesisekelo esizinzile, esithembekile sokubekwa kwezendlalelo ezisebenzayo. I-substrate idlala indima ebalulekile ekwenzeni ama-SOI Wafers (Silicon On Insulator), abalulekile kuma-microelectronics athuthukile namasekhethi ahlanganisiwe. Ngaphezu kwalokho, ama-Epi-Wafers (ama-epitaxial wafers) akhelwe kuma-Si Substrates abalulekile ekukhiqizeni ama-semiconductor asebenza kahle kakhulu njengama-power transistors, ama-diode, namasekethe ahlanganisiwe.
I-Si Substrate iphinde isekele ukwenziwa kwamadivayisi kusetshenziswa i-Gallium Oxide (Ga2O3), into ethembisayo ene-bandgap ebanzi esetshenziselwa izinhlelo zokusebenza zamandla aphezulu kugesi wamandla. Ukwengeza, ukuhambisana kwe-Semicera's Si Substrate ne-AlN Wafers namanye ama-substrates athuthukile kuqinisekisa ukuthi ingakwazi ukuhlangabezana nezidingo ezihlukahlukene zezimboni zobuchwepheshe obuphezulu, okuyenza ibe yisixazululo esikahle sokukhiqizwa kwamadivayisi asezingeni eliphezulu kwezokuxhumana, ezezimoto, nezimboni. .
Ikhwalithi Ethembekile Nengaguquguquki Yezicelo Zezobuchwepheshe Eziphezulu
I-Si Substrate ka-Semicera iklanywe ngokucophelela ukuze ihlangabezane nezidingo ezinzima zokwenziwa kwe-semiconductor. Ubuqotho bayo obukhethekile besakhiwo kanye nezakhiwo zekhwalithi ephezulu ziyenza ibe into efanelekile ukusetshenziswa ezinhlelweni zamakhasethi zokuthutha eziyisiluphu, kanye nokudala izendlalelo ezinembayo eziphezulu kumadivayisi e-semiconductor. Ikhono le-substrate lokugcina ikhwalithi engaguquki ngaphansi kwezimo zezinqubo ezihlukahlukene liqinisekisa ukukhubazeka okuncane, okuthuthukisa isivuno nokusebenza komkhiqizo wokugcina.
Ngokusebenza kwayo okushisayo okuphakeme, amandla emishini, kanye nokuhlanzeka okuphezulu, i-Semicera's Si Substrate iyinto ekhethwa abakhiqizi abafuna ukufeza izindinganiso eziphakeme kakhulu zokunemba, ukwethembeka, nokusebenza ekukhiqizweni kwe-semiconductor.
Khetha i-Semicera's Si Substrate ye-High-Purity, High-Performance Solutions
Kubakhiqizi embonini ye-semiconductor, i-Si Substrate evela ku-Semicera inikeza isisombululo esiqinile, sekhwalithi ephezulu yezinhlelo zokusebenza eziningi, kusukela ekukhiqizweni kwe-Si Wafer kuya ekwakhiweni kwama-Epi-Wafers nama-SOI Wafers. Ngokuhlanzeka okungenakuqhathaniswa, ukunemba, nokuthembeka, le substrate inika amandla ukukhiqizwa kwamadivayisi we-semiconductor asezingeni eliphezulu, okuqinisekisa ukusebenza kwesikhathi eside nokusebenza kahle okuphezulu. Khetha i-Semicera ngezidingo zakho ze-Si, futhi uthembele emkhiqizweni oklanyelwe ukuhlangabezana nezidingo zobuchwepheshe bakusasa.
Izinto | Ukukhiqiza | Ucwaningo | Dummy |
I-Crystal Parameters | |||
I-Polytype | 4H | ||
Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
Amapharamitha kagesi | |||
I-Dopant | n-uhlobo lweNitrojeni | ||
Ukungazweli | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Ububanzi | 150.0±0.2mm | ||
Ubukhulu | 350±25 μm | ||
Umumo oyisicaba oyinhloko | [1-100]±5° | ||
Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
Ifulethi lesibili | Lutho | ||
I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
Isakhiwo | |||
Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
Ikhwalithi Yangaphambili | |||
Ngaphambili | Si | ||
Ukuqedwa kobuso | I-Si-face CMP | ||
Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
Ukumaka kwe-laser yangaphambili | Lutho | ||
Ikhwalithi Emuva | |||
Emuva ekupheleni | C-face CMP | ||
Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
Umphetho | |||
Umphetho | I-Chamfer | ||
Ukupakisha | |||
Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. |