I-Substrate

Incazelo emfushane:

Ngokunemba kwayo okuphakeme nokuhlanzeka okuphezulu, i-Si Substrate ye-Semicera iqinisekisa ukusebenza okuthembekile nokungaguquguquki ezinhlelweni ezibucayi, okuhlanganisa ukukhiqizwa kwe-Epi-Wafer ne-Gallium Oxide (Ga2O3). Idizayinelwe ukusekela ukukhiqizwa kwama-microelectronics athuthukile, le substrate inikeza ukuhambisana okukhethekile nokuzinza, okuyenza ibe yinto ebalulekile yobuchwepheshe obuphambili kwezokuxhumana, ezezimoto nezimboni.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Si Substrate eyenziwe yi-Semicera iyingxenye ebalulekile ekukhiqizweni kwamadivayisi asebenza kahle kakhulu e-semiconductor. Le substrate yenziwe nge-high-purity Silicon (Si), ihlinzeka ngokufana okuhlukile, ukuzinza, kanye nokusebenza okuhle kakhulu, okuyenza ilungele uhla olubanzi lwezinhlelo zokusebenza ezithuthukile embonini ye-semiconductor. Kungakhathaliseki ukuthi isetshenziswa ekukhiqizeni i-Si Wafer, i-SiC Substrate, i-SOI Wafer, noma i-SiN Substrate, i-Semicera Si Substrate iletha ikhwalithi engaguquki nokusebenza okuphezulu ukuze kuhlangatshezwane nezidingo ezikhulayo zama-electronics nesayensi yezinto ezibonakalayo.

Ukusebenza Okungafani Nokuhlanzeka Okuphezulu Nokunemba

I-Si Substrate ye-Semicera ikhiqizwa kusetshenziswa izinqubo ezithuthukisiwe eziqinisekisa ubumsulwa obuphezulu nokulawula okuqinile kwe-dimensional. I-substrate isebenza njengesisekelo sokukhiqizwa kwezinto ezihlukahlukene zokusebenza okuphezulu, okuhlanganisa i-Epi-Wafers kanye ne-AlN Wafers. Ukunemba nokufana kwe-Si Substrate kuyenza ibe yisinqumo esihle kakhulu sokudala izendlalelo ze-epitaxial zefilimu elincanyana nezinye izingxenye ezibalulekile ezisetshenziswa ekukhiqizeni ama-semiconductors esizukulwane esilandelayo. Kungakhathaliseki ukuthi usebenza ne-Gallium Oxide (Ga2O3) noma ezinye izinto ezithuthukisiwe, i-Si Substrate ye-Semicera iqinisekisa amazinga aphezulu okuthembeka nokusebenza.

Izicelo ku Semiconductor Manufacturing

Embonini ye-semiconductor, i-Si Substrate evela ku-Semicera isetshenziswa ohlelweni olubanzi lwezinhlelo zokusebenza, okuhlanganisa ukukhiqizwa kwe-Si Wafer kanye ne-SiC Substrate, lapho ihlinzeka ngesisekelo esizinzile, esithembekile sokubekwa kwezendlalelo ezisebenzayo. I-substrate idlala indima ebalulekile ekwenzeni ama-SOI Wafers (Silicon On Insulator), abalulekile kuma-microelectronics athuthukile namasekhethi ahlanganisiwe. Ngaphezu kwalokho, ama-Epi-Wafers (ama-epitaxial wafers) akhelwe kuma-Si Substrates abalulekile ekukhiqizeni ama-semiconductor asebenza kahle kakhulu njengama-power transistors, ama-diode, namasekethe ahlanganisiwe.

I-Si Substrate iphinde isekele ukwenziwa kwamadivayisi kusetshenziswa i-Gallium Oxide (Ga2O3), into ethembisayo ene-bandgap ebanzi esetshenziselwa izinhlelo zokusebenza zamandla aphezulu kugesi wamandla. Ukwengeza, ukuhambisana kwe-Semicera's Si Substrate ne-AlN Wafers namanye ama-substrates athuthukile kuqinisekisa ukuthi ingakwazi ukuhlangabezana nezidingo ezihlukahlukene zezimboni zobuchwepheshe obuphezulu, okuyenza ibe yisixazululo esikahle sokukhiqizwa kwamadivayisi asezingeni eliphezulu kwezokuxhumana, ezezimoto, nezimboni. .

Ikhwalithi Ethembekile Nengaguquguquki Yezicelo Zezobuchwepheshe Eziphezulu

I-Si Substrate ka-Semicera iklanywe ngokucophelela ukuze ihlangabezane nezidingo ezinzima zokwenziwa kwe-semiconductor. Ubuqotho bayo obukhethekile besakhiwo kanye nezakhiwo zekhwalithi ephezulu ziyenza ibe into efanelekile ukusetshenziswa ezinhlelweni zamakhasethi zokuthutha eziyisiluphu, kanye nokudala izendlalelo ezinembayo eziphezulu kumadivayisi e-semiconductor. Ikhono le-substrate lokugcina ikhwalithi engaguquki ngaphansi kwezimo zezinqubo ezihlukahlukene liqinisekisa ukukhubazeka okuncane, okuthuthukisa isivuno nokusebenza komkhiqizo wokugcina.

Ngokusebenza kwayo okushisayo okuphakeme, amandla emishini, kanye nokuhlanzeka okuphezulu, i-Semicera's Si Substrate iyinto ekhethwa abakhiqizi abafuna ukufeza izindinganiso eziphakeme kakhulu zokunemba, ukwethembeka, nokusebenza ekukhiqizweni kwe-semiconductor.

Khetha i-Semicera's Si Substrate ye-High-Purity, High-Performance Solutions

Kubakhiqizi embonini ye-semiconductor, i-Si Substrate evela ku-Semicera inikeza isisombululo esiqinile, sekhwalithi ephezulu yezinhlelo zokusebenza eziningi, kusukela ekukhiqizweni kwe-Si Wafer kuya ekwakhiweni kwama-Epi-Wafers nama-SOI Wafers. Ngokuhlanzeka okungenakuqhathaniswa, ukunemba, nokuthembeka, le substrate inika amandla ukukhiqizwa kwamadivayisi we-semiconductor asezingeni eliphezulu, okuqinisekisa ukusebenza kwesikhathi eside nokusebenza kahle okuphezulu. Khetha i-Semicera ngezidingo zakho ze-Si, futhi uthembele emkhiqizweni oklanyelwe ukuhlangabezana nezidingo zobuchwepheshe bakusasa.

Izinto

Ukukhiqiza

Ucwaningo

Dummy

I-Crystal Parameters

I-Polytype

4H

Iphutha lokuma kobuso

<11-20 >4±0.15°

Amapharamitha kagesi

I-Dopant

n-uhlobo lweNitrojeni

Ukungazweli

0.015-0.025ohm · cm

Mechanical Parameters

Ububanzi

150.0±0.2mm

Ubukhulu

350±25 μm

Umumo oyisicaba oyinhloko

[1-100]±5°

Ubude obuyisicaba obuyisisekelo

47.5±1.5mm

Ifulethi lesibili

Lutho

I-TTV

≤5 μm

≤10 μm

≤15 μm

I-LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Khothama

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

I-Ra≤0.2nm (5μm*5μm)

Isakhiwo

Ukuminyana kwe-Micropipe

<1 eya/cm2

<10 kwe/cm2

<15 kwe/cm2

Ukungcola kwensimbi

≤5E10 ama-athomu/cm2

NA

I-BPD

≤1500 i-e/cm2

≤3000 i-e/cm2

NA

I-TSD

≤500 i-e/cm2

≤1000 i-e/cm2

NA

Ikhwalithi Yangaphambili

Ngaphambili

Si

Ukuqedwa kobuso

I-Si-face CMP

Izinhlayiya

≤60ea/wafer (usayizi≥0.3μm)

NA

Ukuklwebheka

≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi

Ubude obuqongelelwe≤2*Ububanzi

NA

Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola

Lutho

NA

Ama-Edge chips/indents/fracture/hex plate

Lutho

Izindawo ze-Polytype

Lutho

Indawo eqoqiwe≤20%

Indawo eqoqiwe≤30%

Ukumaka kwe-laser yangaphambili

Lutho

Ikhwalithi Emuva

Emuva ekupheleni

C-face CMP

Ukuklwebheka

≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi

NA

Ukukhubazeka kwasemuva (ama-edge chips/indents)

Lutho

Ukuhwalala emuva

I-Ra≤0.2nm (5μm*5μm)

Ukumaka kwe-laser emuva

1 mm (kusuka emaphethelweni aphezulu)

Umphetho

Umphetho

I-Chamfer

Ukupakisha

Ukupakisha

I-Epi-ilungile ngokufakwa kwe-vacuum

Ukupakishwa kwekhasethi le-multi-wafer

*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD.

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Ama-wafers e-SiC

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