I-SiC & Si3N4 Ceramic

I-氮化硅 I-Silicon nitride ceramics (Si3N4)

I-Silicon nitride ne-silicon carbide yizinhlanganisela eziqinile ze-covalent bond, zinezakhiwo ezifanayo zomzimba namakhemikhali, i-silicon nitride ehlanganiswe nemikhiqizo ye-silicon carbide enokumelana nokushisa okuphezulu, ukumelana nokugqwala, ukumelana nokugqoka, ukumelana nokuguguleka, ukumelana ne-oxidation kanye nochungechunge lwezakhiwo ezinhle kakhulu. I-Silicon nitride ne-silicon carbide njengezinto eziphikisayo ezisezingeni eliphakeme emikhathini ehlukahlukene izinga lokushisa elijwayelekile lingafinyelela ku-1500 ℃ noma ngaphezulu, lisetshenziswa kabanzi kuma-ceramics, i-non-ferrous metallurgy, insimbi nensimbi yensimbi, i-powder metallurgy, imboni yamakhemikhali nezinye izimboni.

I-Silicon nitride ehlanganiswe ne-silicon carbide material kanye nezinsimbi ezingenayo insimbi ayingeni, futhi inezici ezinhle zokuhlukanisa, ngakho-ke isetshenziswa kabanzi ekukhiqizeni izinsimbi ezingenayo insimbi njenge-aluminium, ithusi kanye ne-zinc, ikakhulukazi impahla efanelekile ukukhiqizwa kwezitini ze-electrolytic cell side lining.

Into

Inkomba yezitini zomlilo

Incazelo ye-Kiln

Inkomba yomkhiqizo onobunjwa

I-porosity ebonakalayo(%

<16

<16

<14

Ukuminyana ngobuningi(g/cm3

2 2.65

2 2.65

2 2.68

Amandla acindezelayo ekamelweni lokushisa(I-MPa

2 160

2 170

2 180

Amandla okugoba ekamelweni lokushisa(1400X: I-MPa

2 40

2 45

2 45

Amandla okugoba okushisa aphezulu(1400r I-MPa

2 50

2 50

2 50

I-coefficient yokwanda kwe-thermal(Idatha ye-110CTCxioVC

<4.18

<4.18

<4.18

I-Thermal conductivity(1100C

216

2 16

216

Ama-Refractories(°C

1800

1800

1800

0.2 MPa Ukuthambisa izinga lokushisa ngaphansi komthwalo(X:)

1600

1600

> 1700

Izinga lokushisa eliphezulu lokusebenza(°C

1550

1550

1550