I-silicon carbide ceramic crucibleyenziwe nge-silicon carbide material futhi iyisitsha esivame ukusetshenziswa esinezinga lokushisa eliphezulu.I-silicon carbide ceramic crucibleinokuqina okuhle kakhulu kwezinga lokushisa eliphezulu, ukumelana nokugqwala okuhle kakhulu kanye ne-coefficient ephansi yokwandisa ukushisa okushisayo, okuyenza ikwazi ukumelana nokucindezeleka okushisayo okudlulele kanye nokuguguleka kwamakhemikhali ezindaweni ezinokushisa okuphezulu. Isetshenziselwa indawo yokuhlala yesampula kanye nokucutshungulwa kokuhlolwa noma izinqubo zezimboni ezifana nokuncibilika, ukucwilisa, ukwelapha ukushisa kanye nokusabela kwamakhemikhali ngaphansi kwezimo ezisezingeni eliphezulu.
Eyethui-silicon carbide crucibleyakhiwe ngokucindezela kwe-isostatic okuhlanzekile okuphezulu futhi inokuhamba kahle kwe-thermal kanye nokumelana nokushisa okuphezulu. Enkambweni yokusetshenziswa kwezinga lokushisa eliphezulu, i-coefficient yokwanda okushisayo incane, futhi inokumelana nokucindezeleka okuthile ekushiseni okunamandla kanye nokupholisa okukhulu. Inokumelana nokugqwala okuqinile kusixazululo se-asidi ne-alkali kanye nokuzinza okuhle kakhulu kwamakhemikhali. Imodeli ethile ingenziwa ngokwezifiso ngokudweba kanye nesampula, futhi impahla iyi-graphite yasekhaya kanye ne-graphite engenisiwe ukuze ihlangabezane nezidingo ezahlukene zamakhasimende.
Izinto zokusetshenziswa eziyinhloko ze-graphite crucible yi-graphite, i-silicon carbide, i-silica, ubumba oluphikisayo, i-pitch, netiyela, njll.
>I-High Pure Graphite Crucible
>I-Isostatic Graphite Crucible
>I-Silicon Carbide Graphite Crucible
> I-Silicon Carbide Crucible
> I-Clay Graphite Crucible
> I-Quarts Crucible
Izici:
1. Isikhathi eside sokusebenza
2. High conductivity ezishisayo
3. Izinto zesitayela esisha
4. Ukumelana nokugqwala
5. Ukumelana ne-oxidation
6. Amandla aphezulu
7. Multi-function
Idatha Yezobuchwepheshe Yezinto Ezibalulekile | |||
Inkomba | Iyunithi | Inani elijwayelekile | Inani lokuhlola |
Ukumelana Nokushisa | ℃ | 1650 ℃ | 1800 ℃ |
Ukwakheka Kwamakhemikhali | C | 35-45 | 45 |
I-SiC | 15 ~ 25 | 25 | |
I-AL2O3 | 10-20 | 25 | |
SiO2 | 20~25 | 5 | |
I-Porosity ebonakalayo | % | ≤30% | ≤28% |
Amandla Acindezelayo | Mpa | ≥8.5MPa | ≥8.5MPa |
Ukuminyana kwenqwaba | g/cm3 | ≥1.75 | 1.78 |
I-silicon carbide crucible yethu iyi-isostatic forming, engasebenzisa izikhathi ezingama-23 esithandweni somlilo, kanti abanye bangasebenzisa izikhathi eziyi-12 kuphela. |