I-SiC Coated Graphite Base Susceptors ye-MOCVD

I-SiC Coated Graphite Base Susceptorsye-MOCVD evela ku-semicera akhiwe ukuze anikeze ukusebenza okukhethekile kuzinqubo zokukhula kwe-epitaxial. Ukugqoka okuphezulu kwe-silicon carbide kusisekelo se-graphite kuqinisekisa ukuzinza, ukuqina, kanye nokusebenza kahle kwe-thermal ngesikhathi sokusebenza kwe-MOCVD (Metal Organic Chemical Vapor Deposition). Ngokusebenzisa ubuchwepheshe obusha be-semicera, ungafinyelela ukunemba okuthuthukisiwe nokusebenza kahleI-EpitaxyfuthiI-SiC Epitaxyizicelo.

LeziI-MOCVD Susceptorszenzelwe ukusekela uhla lwezingxenye ezibalulekile ze-semiconductor, njengeI-PSS Etching Inkampani yenethiwekhi, I-ICP Etching Carrier, futhiInkampani yenethiwekhi ye-RTP, okubenza basebenzise izinto ezihlukahlukene emisebenzini ehlukahlukene yokuhlanganisa kanye ne-epitaxial. Ukuzibophezela kwe-Semicera emazingeni aphezulu kuqinisekisa ukuthi lezi zixhumi zihlangabezana nezidingo ezinzima zokukhiqizwa kwe-semiconductor yesimanje.

Ilungele ukusetshenziswa kuI-LED EpitaxialI-Susceptor, i-Barrel Susceptor, kanye nezinqubo ze-Monocrystalline Silicon, lezi susceptors zingenziwa ngezifiso amasayizi ama-wafer ahlukene, kufaka phakathi ukulungiswa kwe-Pancake Susceptor. Futhi zisebenza kahle kakhulu ekuphatheni Izingxenye ze-Photovoltaic, okuzenza zibe yingxenye ebalulekile ekuthuthukisweni kwamaseli elanga asebenza kahle.

Ngaphezu kwalokho, i-SiC Coated Graphite Base Susceptors ye-MOCVD ithuthukiselwe i-GaN ku-SiC Epitaxy, enikeza ukuhambisana okuphezulu nezinto ezithuthukisiwe ze-semiconductor. Noma ngabe ugxile ekuthuthukiseni izivuno noma ekuthuthukiseni ikhwalithi yokukhula kwe-epitaxial, izithasiselo ze-semicera zihlinzeka ngokuthembeka nokusebenza okudingekayo ukuze uphumelele ezimbonini zobuchwepheshe obuphezulu.