Inqubo ehlanganisiwe ye-SiC ye-graphite base SiC Coated Graphite Carriers

Inqubo ehlanganisiwe ye-SiC yesisekelo se-graphite SiC Coated Graphite Carriers Isithombe Esifakiwe

Incazelo emfushane:

I-Semicera Energy Technology Co., Ltd. ingumhlinzeki oholayo wezitsha zobumba ezithuthukisiwe ze-semiconductor. Imikhiqizo yethu eyinhloko ihlanganisa: ama-Silicon carbide etched discs, ama-silicon carbide boat trailer, imikhumbi ye-silicon carbide wafer (PV & Semiconductor), amashubhu e-silicon carbide furnace, ama-silicon carbide cantilever paddles, i-silicon carbide chuck, imishayo ye-silicon carbide, kanye ne-CVD coating I-TaC coatings.
Imikhiqizo isetshenziswa kakhulu ezimbonini ze-semiconductor kanye ne-photovoltaic, njengokukhula kwekristalu, i-epitaxy, i-etching, ukupakisha, ukumboza kanye nemishini yokushisa yokusabalalisa.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Sigcina ukubekezelelana okuseduze kakhulu lapho sifaka isiceloUkufakwa kwe-SiC, usebenzisa ukunemba okuphezulu ukuze uqinisekise iphrofayili ye-susceptor efanayo. Siphinde sikhiqize izinto ezinezakhiwo ezifanelekile zokumelana nogesi ukuze zisetshenziswe kumasistimu ashisayo ashisayo. Zonke izingxenye eziqediwe ziza nesitifiketi sokuhambisana nobumsulwa nesilinganiselo.

Inkampani yethu ihlinzekaUkufakwa kwe-SiCinqubo yezinsizakalo nge-CVD indlela ebusweni be-graphite, izitsha zobumba nezinye izinto, ukuze amagesi akhethekile aqukethe ikhabhoni ne-silicon asabele ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto eziboshwe, akha ungqimba lokuvikela lwe-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

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Inqubo ye-CVD iletha ubumsulwa obuphezulu kakhulu kanye nokuminyana kwethiyoriUkufakwa kwe-SiCngaphandle kwe-porosity. Ngaphezu kwalokho, njengoba i-silicon carbide inzima kakhulu, ingapholishwa endaweni efana nesibuko.I-CVD silicon carbide (SiC) yokugqokailethe izinzuzo ezimbalwa ezihlanganisa i-ultra-high purity surface kanye nokuqina okugqokile okwedlulele. Njengoba imikhiqizo ehlanganisiwe isebenza kahle ku-vacuum ephezulu kanye nezimo zokushisa okuphezulu, ilungele ukusetshenziswa embonini ye-semiconductor nakwenye indawo ehlanzekile kakhulu. Siphinde sihlinzeke ngemikhiqizo ye-pyrolytic graphite (PG).

Izici Eziyinhloko

1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Okuyinhloko-05

Okuyinhloko-04

Okuyinhloko-03

Ukucaciswa Okuyinhloko kwe-CVD-SIC Coatings

I-SiC-CVD
Ukuminyana	(g/cc)	3.21
Amandla e-Flexural	(Mpa)	470
Ukunwetshwa kwe-thermal	(10-6/K)	4
I-Thermal conductivity	(W/mK)	300

Isicelo

I-CVD silicon carbide coating isisetshenziswe ezimbonini ze-semiconductor kakade, njengethreyi ye-MOCVD, i-RTP ne-oxide etching chamber njengoba i-silicon nitride inokumelana nokushaqeka okukhulu okushisayo futhi ingamelana ne-plasma yamandla aphezulu.
-I-Silicon carbide isetshenziswa kabanzi ku-semiconductor kanye ne-coating.

Isicelo

Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo: