Incazelo
I-CVD-SiC coatinginezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi ne-alkali kanye ne-organic reagent, enezakhiwo ezinzile ngokomzimba namakhemikhali.
Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.
Nokho,Ukufakwa kwe-SiCingagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Isetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. KuhleI-SiC crystal coatedindawo ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha Nokuthumela
Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:
| Ubuningi(Izingcezu) | 1 - 1000 | > 1000 |
| Est. Isikhathi(izinsuku) | 30 | Kuzoxoxiswana |
