Incazelo Yomkhiqizo
4h-n 4inch 6inch dia100mm sic seed wafer 1mm ukujiya ukuze kukhule ingot
Usayizi owenziwe ngokwezifiso/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/Ukuhlanzeka okuphezulu 4H-N 4inch 6inch dia 150mm i-silicon carbide icrystal eyodwa (sic) substrates ama-wafersS/Izinkwa eziyisinkwa esikiwe ezenziwe ngokwezifisoUkukhiqiza 4 grade 4H-N 1.5mm SIC Wafers for imbewu ikristalu
Mayelana ne-Silicon Carbide (SiC)Crystal
I-Silicon carbide (SiC), eyaziwa nangokuthi i-carborundum, i-semiconductor equkethe i-silicon ne-carbon enefomula yamakhemikhali i-SiC. I-SiC isetshenziswa kumishini ye-semiconductor electronics esebenza emazingeni okushisa aphezulu noma ama-voltage aphezulu, noma kokubili.I-SiC futhi ingenye yezingxenye ezibalulekile ze-LED, iyindawo engaphansi edumile yamadivayisi e-GaN akhulayo, futhi isebenza njengesisakazi sokushisa endaweni ephezulu. ama-LED amandla.
Incazelo
| Impahla | 4H-SiC, Ikristalu Eyodwa | 6H-SiC, Ikristalu Eyodwa |
| I-Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Ukulandelana Kwesitaki | I-ABCB | I-ABCACB |
| Mohs Ukuqina | ≈9.2 | ≈9.2 |
| Ukuminyana | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. I-Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| I-Refraction Index @750nm | cha = 2.61 | cha = 2.60 |
| I-Dielectric Constant | c:9.66 | c:9.66 |
| I-Thermal Conductivity (uhlobo lwe-N, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
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| I-Thermal Conductivity (I-Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| I-band-gap | 3.23 eV | 3.02 eV |
| I-Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| I-Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
