Izici Zomkhiqizo we-SiC
Izinga lokushisa eliphezulu kanye nokugqwala, kuthuthukisa ikhwalithi ye-wafer kanye nokukhiqiza
I-SiC ibhekisela ku-silicon carbide. I-Silicon carbide (SiC) yenziwe ngesihlabathi se-quartz, i-coke nezinye izinto ezingavuthiwe ngokusebenzisa ukuncibilika kwesithando sokushisa okuphezulu. Ukukhiqizwa kwamanje kwezimboni kwe-silicon carbide kunezinhlobo ezimbili, i-silicon carbide emnyama ne-silicon carbide eluhlaza. Zombili ziyi-crystal ene-hexagonal, amandla adonsela phansi angu-3.21g / cm3, ubulukhuni obuncane obungu-2840 ~ 3320kg / mm2.
Okungenani izinhlobo ezingama-70 ze-crystalline silicon carbide, ngenxa yamandla adonsela phansi angu-3.21g/cm3 namandla okushisa aphezulu, ilungele ama-bearings noma izinto zokusetshenziswa zesithando somlilo esiphezulu. nganoma iyiphi ingcindezi ayikwazi ukufinyelelwa, futhi ube nomsebenzi wamakhemikhali ophansi kakhulu.
Ngesikhathi esifanayo, abantu abaningi baye bazama ukushintsha i-silicon nge-silicon carbide ngenxa ye-conductivity ephezulu ye-thermal, i-high crush amandla ensimu kagesi kanye nokuminyana okuphezulu kwamanje. Muva nje, ekusetshenzisweni kwezingxenye zamandla aphezulu we-semiconductor. Eqinisweni, i-silicon carbide substrate ekuqhubeni okushisayo, izikhathi ezingaphezu kwezingu-10 ngaphezu kwe-sapphire substrate, ngakho-ke ukusetshenziswa kwezingxenye ze-LED ze-silicon carbide substrate, ne-conductivity enhle kanye ne-thermal conductivity, kuqhathaniswa nokukhiqizwa kwe-LED enamandla amakhulu.