I-silicon carbide cantilever paddle

Incazelo emfushane:

I-silicon carbide paddle, eyaziwa nangokuthi i-silicon carbide cantilever paddle, i-silicon carbide cantilever beam iwuhlobo lwemikhiqizo yobumba ye-silicon carbide emva kuka-1850.℃izinga lokushisa eliphezulu sintering, kodwa izinga lokushisa eliphezulu sintering Silicon carbide Ceramic umkhiqizo okhethekile Ceramic, by izinhlayiya ezinhle.α-I-SiC kanye nezithasiselo zicindezelwe endaweni engenalutho, lapho kuthintana ne-silicon ewuketshezi ekushiseni okuphezulu, ikhabhoni endaweni engenalutho kanye nokungena kwe-Si reaction, ukwakheka kweβ-SiC,Futhi kuhlanganiswe ne-α-SiC, i-silicon yamahhala yagcwalisa i-porosity, ukuze ithole izinto zobumba eziphezulu zokuminyana; Inezici ezihlukahlukene eziphakeme ze-ceramics yezimboni.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC Cantilever paddleisetshenziswa esithandweni sokunwebeka sokusabalalisa semboni ye-photovoltaic ukuze kuhlanganiswe amawafa e-silicon e-monocrystalline kanye ne-polycrystalline. Isici sayo siyenza ikwazi ukumelana nezinga lokushisa eliphezulu nokugqwala, okuyenza iphile isikhathi eside.
II-SiC Cantilever paddleiletha izikebhe ze-SiC / ze-quartz ezithwala ama-wafers e-silicon kushubhu yesithando sokushisa ephezulu yokusabalalisa.
Ubude bethuI-SiC Cantilever paddleububanzi kusuka ku-1,500 kuya ku-3,500 mm.I-SiC Cantilever paddle'subukhulu bungenziwa ngokuthungwa ngokuya ngokucaciswa kwekhasimende.

Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide
Impahla	Inani Elijwayelekile
Izinga lokushisa lokusebenza (°C)	1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo)
Okuqukethwe kwe-SiC	> 99.96%
Mahhala Si okuqukethwe	< 0.1%
Ukuminyana ngobuningi	2.60-2.70 g/cm³
I-porosity ebonakalayo	< 16%
Amandla okucindezela	> 600 MPa
Amandla okugoba abandayo	80-90 MPa (20°C)
Amandla okugoba ashisayo	90-100 MPa (1400°C)
Ukunwetshwa kwe-Thermal @1500°C	4.70 10^-6/°C
I-Thermal conductivity @1200°C	23 W/m•K
I-Elastic module	240 GPA
Ukumelana nokushaqeka okushisayo	Kuhle ngokwedlulele