I-SemiceraI-SiC Cantilever Wafer Paddleyakhelwe ukuhlangabezana nezidingo zokwenziwa kwe-semiconductor yesimanje. Lokhui-wafer paddleinikeza amandla amahle kakhulu emishini kanye nokumelana nokushisa, okubalulekile ekuphatheni ama-wafers ezindaweni ezinokushisa okuphezulu.
Idizayini ye-SiC cantilever inika amandla ukubekwa kwe-wafer okunembe, kunciphisa ubungozi bokulimala ngesikhathi sokuphatha. I-thermal conductivity yayo ephezulu iqinisekisa ukuthi i-wafer ihlala izinzile ngisho nangaphansi kwezimo ezimbi kakhulu, okubalulekile ekugcineni ukukhiqiza ukusebenza kahle.
Ngaphezu kwezinzuzo zayo zesakhiwo, i-Semicera'sI-SiC Cantilever Wafer Paddlefuthi inikeza izinzuzo isisindo kanye ukuqina. Ukwakhiwa kwe-lightweight kwenza kube lula ukuphatha nokuhlanganisa ezinhlelweni ezikhona, kuyilapho i-high-density SiC material iqinisekisa ukuqina okuhlala isikhathi eside ngaphansi kwezimo ezinzima.
| Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
| Impahla | Inani Elijwayelekile |
| Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
| Okuqukethwe kwe-SiC | > 99.96% |
| Mahhala Si okuqukethwe | < 0.1% |
| Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
| I-porosity ebonakalayo | < 16% |
| Amandla okucindezela | > 600 MPa |
| Amandla okugoba abandayo | 80-90 MPa (20°C) |
| Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
| Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
| I-Thermal conductivity @1200°C | 23 W/m•K |
| I-Elastic module | 240 GPA |
| Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |
