Ishubhu ye-silicon carbide ceramic inokuqina okuhle kakhulu kwezinga lokushisa futhi ingagcina ukwakheka nokusebenza kwayo ezindaweni zokushisa eziphakeme kakhulu. Ingakwazi ukumelana namazinga okushisa aphezulu afika ezinkulungwaneni zama-degree Celsius, ngakho-ke inobubanzi obuningi bokusetshenziswa ezinhlelweni zokushisa okuphezulu. Ngaphezu kwalokho, ithubhu ye-silicon carbide ceramic nayo inokuhamba okuhle kokushisa futhi ingakwazi ukuqhuba ukushisa ngokuphumelelayo, ikwenze kube nendima ebalulekile emkhakheni wokuphathwa kokushisa kanye nokuchithwa kokushisa.
Ishubhu ye-silicon carbide ceramic nayo ikhombisa ukuzinza okuhle kwamakhemikhali nokumelana nokugqwala. Inokumelana kahle nama-asidi amaningi, ama-alkali namanye amakhemikhali, okuyenza isetshenziswe kabanzi ezinqubweni zamakhemikhali, izindawo ezibolayo kanye nokwelashwa kwe-asidi-base. Ngaphezu kwalokho, ishubhu ye-silicon carbide ceramic nayo ine-coefficient ephansi yokwanda okushisayo, okuyenza ikwazi ukugcina ukuzinza okuhle lapho izinga lokushisa lishintsha.
I-Silicon carbide ceramic tube inohlu olubanzi lwezicelo ezimbonini eziningi. Ezithandweni zokushisa ezishisa kakhulu, imishini yokwelapha ukushisa kanye nezibasi, ishubhu le-silicon carbide ceramic lingasetshenziswa njengendawo yangaphakathi yesithando somlilo, izinto eziphikisayo kanye nezinto zokushisa ezishisayo. Embonini yamakhemikhali, ingasetshenziselwa amapayipi, ama-reactors kanye namathangi okugcina emidiya egqwalayo. Ngaphezu kwalokho, ishubhu ye-silicon carbide ceramic nayo isetshenziswa kabanzi ekukhiqizeni i-semiconductor, imboni yelanga, imishini kagesi kanye ne-aerospace.
Umumo nosayizi kungenziwa egcizelele ngokuvumelana nezidingo
Ukuqina okuphezulu kakhulu(HV10): 22.2(Gpa)
Ukuminyana okuphansi kakhulu (3.10-3.20 g/cm³)
Emazingeni okushisa afinyelela ku-1400 ℃, iSiC ingagcina amandla ayo
Ngenxa yokuqina kwayo kwamakhemikhali nokomzimba, i-SiC inobunzima obuphezulu nokumelana nokugqwala.
