I-Semicera'sI-Silicon Carbide Epitaxyyakhelwe ukuhlangabezana nezidingo ezinzima zezinhlelo zokusebenza zesimanje ze-semiconductor. Ngokusebenzisa amasu okukhula e-epitaxial athuthukisiwe, siqinisekisa ukuthi ungqimba ngalunye lwe-silicon carbide lubonisa ikhwalithi yekristalu ehlukile, ukufana, kanye nokuminyana kokukhubazeka okuncane. Lezi zici zibalulekile ekwakheni amandla kagesi asebenza kahle kakhulu, lapho ukusebenza kahle nokuphatha okushisayo kubaluleke kakhulu.
II-Silicon Carbide Epitaxyinqubo e-Semicera ithuthukisiwe ukuze ikhiqize izendlalelo ze-epitaxial ezinogqinsi olunembile nokulawula i-doping, iqinisekisa ukusebenza okungaguquguquki kulo lonke uhla lwamadivayisi. Leli zinga lokunemba libalulekile ekusetshenzisweni ezimotweni zikagesi, izinhlelo zamandla avuselelekayo, kanye nokuxhumana okuphezulu, lapho ukwethembeka nokusebenza kahle kubalulekile.
Ngaphezu kwalokho, i-Semicera'sI-Silicon Carbide Epitaxyinikezela nge-thermal conductivity ethuthukisiwe kanye ne-voltage ephezulu yokuphuka, okuyenza ibe yinketho ekhethwayo kumadivayisi asebenza ngaphansi kwezimo ezimbi kakhulu. Lezi zici zifaka isandla esikhathini eside sempilo yedivayisi kanye nokusebenza kahle kwesistimu kukonke okuthuthukisiwe, ikakhulukazi ezindaweni ezinamandla amakhulu nezinezinga lokushisa eliphezulu.
I-Semicera futhi inikeza izinketho zokwenza ngokwezifiso zeI-Silicon Carbide Epitaxy, okuvumela izixazululo ezenzelwe wena ezihlangabezana nezidingo ezithile zedivayisi. Kungakhathaliseki ukuthi okokucwaninga noma ukukhiqizwa kwezinga elikhulu, izendlalelo zethu ze-epitaxial zidizayinelwe ukusekela isizukulwane esilandelayo se-semiconductor emisha, evumela ukuthuthukiswa kwamadivayisi kagesi anamandla, asebenza kahle futhi athembekile.
Ngokuhlanganisa ubuchwepheshe obusezingeni eliphezulu kanye nezinqubo zokulawula ikhwalithi eziqinile, i-Semicera iqinisekisa ukuthi yethuI-Silicon Carbide Epitaxyimikhiqizo ayihlangani nje kuphela kodwa yeqe amazinga emboni. Lokhu kuzibophezela ekusebenzeni kahle kwenza izendlalelo zethu ze-epitaxial zibe isisekelo esikahle sezinhlelo zokusebenza ezithuthukisiwe ze-semiconductor, okuvula indlela yempumelelo kugesi wamandla kanye ne-optoelectronics.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
