I-Silicon Carbide Ceramic

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I-silicon carbide iwuhlobo lwe-synthetic carbide ene-SiC molecule. Uma kunikwe amandla, i-silica nekhabhoni kuvame ukwakheka emazingeni okushisa angaphezu kuka-2000°C. I-Silicon carbide inokuminyana kwethiyori engu-3.18g/cm3, ubulukhuni be-Mohs obulandela idayimane, kanye nokuqina okuncane okungu-3300kg/mm3 phakathi kuka-9.2 no-9.8. Ngenxa yokuqina kwayo okuphezulu nokumelana nokugqoka okuphezulu, inezici zokumelana nokushisa okuphezulu futhi isetshenziselwa izinhlobonhlobo zezingxenye zemishini ezingagugi, ezingagqwali futhi ezinokushisa okuphezulu. Iwuhlobo olusha lobuchwepheshe be-ceramic obungagugi.

1, Izakhiwo zamakhemikhali.

(1) Ukumelana ne-oxidation: Lapho impahla ye-silicon carbide ishiselwa ku-1300 ° C emoyeni, ungqimba oluvikelayo lwe-silicon dioxide luqala ukukhiqizwa phezu kwekristalu yayo ye-silicon carbide. Ngokuqiniswa kongqimba oluvikelayo, i-silicon carbide yangaphakathi iyaqhubeka nokwenza i-oxidize, ukuze i-silicon carbide ibe nokuphikiswa okuhle kwe-oxidation. Lapho izinga lokushisa lifinyelela ngaphezu kuka-1900K(1627 ° C), ifilimu yokuvikela ye-silicon dioxide iqala ukonakala, kanye ne-oxidation ye-silicon carbide iyaqina, ngakho-ke i-1900K izinga lokushisa elisebenzayo le-silicon carbide endaweni ene-oxidizing.

(2) Ukumelana ne-Acid ne-alkali: ngenxa yendima yefilimu evikelayo ye-silicon dioxide, i-silicon carbide inezakhiwo endimeni yefilimu evikelayo ye-silicon dioxide.

2, Izakhiwo zomzimba nezemishini.

(1) Ukuminyana: Ukuminyana kwezinhlayiyana zamakristalu e-silicon carbide ahlukahlukene kusondele kakhulu, ngokuvamile kubhekwa njenge-3.20g/mm3, kanti ukuminyana kwemvelo kwama-abrasives e-silicon carbide kuphakathi kuka-1.2-1.6g/mm3, kuye ngosayizi wezinhlayiyana, ukwakheka kosayizi wezinhlayiyana kanye nesimo sosayizi wezinhlayiyana.

(2) Ukuqina: Ubulukhuni be-Mohs be-silicon carbide bungu-9.2, i-micro-density ye-Wessler ingu-3000-3300kg/mm2, ukuqina kwe-Knopp kungu-2670-2815kg/mm, i-abrasive iphakeme kune-corundum, eduze nedayimane, i-cubic i-boron nitride ne-boron carbide.

(3) I-Thermal conductivity: Imikhiqizo ye-silicon carbide ine-conductivity ephezulu ye-thermal, i-coefficient encane yokwandisa ukushisa, ukumelana nokushaqeka okuphezulu kwe-thermal, futhi iyimpahla yekhwalithi ephezulu yokuphikisa.

3. Izakhiwo zikagesi.

Into Iyunithi Idatha Idatha Idatha Idatha Idatha
I-RBsic(sic) I-NBSiC I-SSiC I-RSiC I-OSIC
Okuqukethwe kwe-SiC % 85 76 99 ≥99 ≥90
Okuqukethwe kwe-silicon yamahhala % 15 0 0 0 0
Izinga lokushisa eliphezulu lesevisi 1380 1450 1650 1620 1400
Ukuminyana g/cm^3 3.02 2.75-2.85 3.08-3.16 2.65-2.75 2.75-2.85
I-porosity evulekile % 0 13-15 0 15-18 7-8
Amandla okugoba 20 ℃ Mpa 250 160 380 100 /
Amandla okugoba 1200 ℃ Mpa 280 180 400 120 /
I-modulus ye-elasticity 20 ℃ I-Gpa 330 580 420 240 /
I-modulus ye-elasticity 1200 ℃ I-Gpa 300 / / 200 /
Thermal conductivity 1200 ℃ W/mk 45 19.6 100-120 36.6 /
I-coefficient yokwandisa i-thermallex K^-lx10^-8 4.5 4.7 4.1 4.69 /
HV kg/m^m2 2115 / 2800 / /