I-silicon carbide iwuhlobo lwe-synthetic carbide ene-SiC molecule. Uma kunikwe amandla, i-silica nekhabhoni kuvame ukwakheka emazingeni okushisa angaphezu kuka-2000°C. I-Silicon carbide inokuminyana kwethiyori engu-3.18g/cm3, ubulukhuni be-Mohs obulandela idayimane, kanye nokuqina okuncane okungu-3300kg/mm3 phakathi kuka-9.2 no-9.8. Ngenxa yokuqina kwayo okuphezulu nokumelana nokugqoka okuphezulu, inezici zokumelana nokushisa okuphezulu futhi isetshenziselwa izinhlobonhlobo zezingxenye zemishini ezingagugi, ezingagqwali futhi ezinokushisa okuphezulu. Iwuhlobo olusha lobuchwepheshe be-ceramic obungagugi.
1, Izakhiwo zamakhemikhali.
(1) Ukumelana ne-oxidation: Lapho impahla ye-silicon carbide ishiselwa ku-1300 ° C emoyeni, ungqimba oluvikelayo lwe-silicon dioxide luqala ukukhiqizwa phezu kwekristalu yayo ye-silicon carbide. Ngokuqiniswa kongqimba oluvikelayo, i-silicon carbide yangaphakathi iyaqhubeka nokwenza i-oxidize, ukuze i-silicon carbide ibe nokuphikiswa okuhle kwe-oxidation. Lapho izinga lokushisa lifinyelela ngaphezu kuka-1900K(1627 ° C), ifilimu yokuvikela ye-silicon dioxide iqala ukonakala, kanye ne-oxidation ye-silicon carbide iyaqina, ngakho-ke i-1900K izinga lokushisa elisebenzayo le-silicon carbide endaweni ene-oxidizing.
(2) Ukumelana ne-Acid ne-alkali: ngenxa yendima yefilimu evikelayo ye-silicon dioxide, i-silicon carbide inezakhiwo endimeni yefilimu evikelayo ye-silicon dioxide.
2, Izakhiwo zomzimba nezemishini.
(1) Ukuminyana: Ukuminyana kwezinhlayiyana zamakristalu e-silicon carbide ahlukahlukene kusondele kakhulu, ngokuvamile kubhekwa njenge-3.20g/mm3, kanti ukuminyana kwemvelo kwama-abrasives e-silicon carbide kuphakathi kuka-1.2-1.6g/mm3, kuye ngosayizi wezinhlayiyana, ukwakheka kosayizi wezinhlayiyana kanye nesimo sosayizi wezinhlayiyana.
(2) Ukuqina: Ubulukhuni be-Mohs be-silicon carbide bungu-9.2, i-micro-density ye-Wessler ingu-3000-3300kg/mm2, ukuqina kwe-Knopp kungu-2670-2815kg/mm, i-abrasive iphakeme kune-corundum, eduze nedayimane, i-cubic i-boron nitride ne-boron carbide.
(3) I-Thermal conductivity: Imikhiqizo ye-silicon carbide ine-conductivity ephezulu ye-thermal, i-coefficient encane yokwandisa ukushisa, ukumelana nokushaqeka okuphezulu kwe-thermal, futhi iyimpahla yekhwalithi ephezulu yokuphikisa.
3. Izakhiwo zikagesi.
| Into | Iyunithi | Idatha | Idatha | Idatha | Idatha | Idatha |
| I-RBsic(sic) | I-NBSiC | I-SSiC | I-RSiC | I-OSIC | ||
| Okuqukethwe kwe-SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| Okuqukethwe kwe-silicon yamahhala | % | 15 | 0 | 0 | 0 | 0 |
| Izinga lokushisa eliphezulu lesevisi | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Ukuminyana | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| I-porosity evulekile | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Amandla okugoba 20 ℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Amandla okugoba 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| I-modulus ye-elasticity 20 ℃ | I-Gpa | 330 | 580 | 420 | 240 | / |
| I-modulus ye-elasticity 1200 ℃ | I-Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| I-coefficient yokwandisa i-thermallex | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
