Incazelo
II-Silicon Carbide (SiC) I-Wafer Susceptorsye-MOCVD evela ku-semicera yakhelwe izinqubo ze-epitaxial ezithuthukisiwe, ezinikeza ukusebenza okuphezulu kwakho kokubiliI-EpitaxyfuthiI-SiC Epitaxyizicelo. Indlela emisha ye-Semicera iqinisekisa ukuthi lezi zixhumi ziqinile futhi zisebenza kahle, zinikeza ukuzinza nokunemba kwemisebenzi yokukhiqiza ebalulekile.
Iklanyelwe ukusekela izidingo eziyinkimbinkimbi zeI-MOCVD Susceptoramasistimu, le mikhiqizo inezinto eziningi, iyahambisana nezinkampani zenethiwekhi ezifana ne-PSS Etching Carrier, ICP Etching Carrier, ne-RTP Carrier. Ukuguquguquka kwabo kubenza bafanelekele izimboni zobuchwepheshe obuphezulu, kuhlanganise nalabo abasebenza nazoI-LED EpitaxialI-Susceptor ne-Monocrystalline Silicon.
Ngokucushwa okuningi, okuhlanganisa i-Barrel Susceptor ne-Pancake Susceptor, lezi susceptors ze-wafer nazo zibalulekile emkhakheni we-photovoltaic, zisekela ukukhiqizwa kwe-Photovoltaic Parts. Kubakhiqizi be-semiconductor, amandla okuphatha i-GaN ezinqubweni ze-SiC Epitaxy enza lezi susceptors zibaluleke kakhulu ekuqinisekiseni ukuphuma kwekhwalithi ephezulu kuzo zonke izinhlelo zokusebenza eziningi.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. KuhleI-SiC crystal coatedindawo ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:
| I-SiC-CVD | ||
| Ukuminyana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukunwetshwa kwe-thermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha Nokuthumela
Ikhono Lokuhlinzeka:
10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:
| Ubuningi(Izingcezu) | 1-1000 | > 1000 |
| Est. Isikhathi(izinsuku) | 30 | Kuzoxoxiswana |
