Ifilimu ye-Silicon ka-Semicera iwumsebenzi wekhwalithi ephezulu, onembile-obunjiniyela oklanyelwe ukuhlangabezana nezidingo eziqinile zemboni ye-semiconductor. Ikhiqizwe nge-silicon emsulwa, lesi sixazululo sefilimu elincanyana sinikeza ukufana okuhle kakhulu, ukuhlanzeka okuphezulu, kanye nezakhiwo ezihlukile zikagesi nezishisayo. Ilungele ukusetshenziswa ezinhlelweni ezahlukene ze-semiconductor, okuhlanganisa ukukhiqizwa kwe-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, ne-Epi-Wafer. Ifilimu ye-Silicon ye-Semicera iqinisekisa ukusebenza okuthembekile nokungaguquguquki, iyenze ibe yinto ebalulekile yama-microelectronics athuthukile.
Ikhwalithi Ephakeme Nokusebenza Kokukhiqiza I-Semiconductor
Ifilimu ye-Silicon ye-Semicera yaziwa ngamandla ayo emishini avelele, ukuzinza okuphezulu kokushisa, namazinga aphansi amaphutha, konke okubalulekile ekwakhiweni kwama-semiconductors asebenza kahle kakhulu. Kungakhathaliseki ukuthi isetshenziswa ekukhiqizweni kwemishini ye-Gallium Oxide (Ga2O3), i-AlN Wafer, noma i-Epi-Wafers, ifilimu inikeza isisekelo esiqinile sokufakwa kwefilimu emincane kanye nokukhula kwe-epitaxial. Ukuhambisana kwayo namanye ama-semiconductor substrates afana ne-SiC Substrate kanye ne-SOI Wafers kuqinisekisa ukuhlanganiswa okungenamthungo ezinqubweni ezikhona zokukhiqiza, okusiza ukugcina ukuvunwa okuphezulu kanye nekhwalithi yomkhiqizo engaguquki.
Izicelo embonini ye-Semiconductor
Embonini ye-semiconductor, i-Semicera's Silicon Film isetshenziswa ezinhlobonhlobo zezinhlelo zokusebenza, kusukela ekukhiqizweni kwe-Si Wafer ne-SOI Wafer kuya ekusetshenzisweni okukhethekile okufana nokwakhiwa kwe-SiN Substrate kanye ne-Epi-Wafer. Ukuhlanzeka okuphezulu nokunemba kwale filimu kuyenza ibaluleke kakhulu ekukhiqizweni kwezingxenye ezithuthukile ezisetshenziswa kukho konke kusuka kuma-microprocessors namasekethe ahlanganisiwe kuya kumadivayisi we-optoelectronic.
Ifilimu ye-Silicon idlala indima ebalulekile ezinqubweni ze-semiconductor ezifana nokukhula kwe-epitaxial, i-wafer bonding, kanye nokufakwa kwefilimu encane. Izakhiwo zayo ezinokwethenjelwa zibaluleke kakhulu ezimbonini ezidinga izindawo ezilawulwa kakhulu, njengezindlu ezihlanzekile ezindwangu ze-semiconductor. Ukwengeza, i-Silicon Film ingahlanganiswa ezinhlelweni zamakhasethi ukuze kuphathwe kahle i-wafer nokuthutha ngesikhathi sokukhiqiza.
Ukuthembeka Kwesikhathi Eside Nokungaguquguquki
Enye yezinzuzo ezibalulekile zokusebenzisa i-Semicera's Silicon Film ukwethembeka kwayo kwesikhathi eside. Ngokuhlala kwayo okuhle kakhulu nekhwalithi engaguquki, le filimu inikeza isisombululo esinokwethenjelwa sezindawo zokukhiqiza ezinomthamo ophezulu. Kungakhathaliseki ukuthi isetshenziswa kumadivayisi we-semiconductor anembe kakhulu noma izinhlelo zokusebenza ze-elekthronikhi ezithuthukisiwe, Ifilimu Ye-Silicon ye-Semicera iqinisekisa ukuthi abakhiqizi bangakwazi ukufeza ukusebenza okuphezulu nokuthembeka kuyo yonke imikhiqizo eminingi.
Kungani Khetha Ifilimu Ye-Silicon ye-Semicera?
Ifilimu ye-Silicon evela ku-Semicera iyinto ebalulekile ekusetshenzisweni okuphambili embonini ye-semiconductor. Izakhiwo zayo ezisebenza kahle kakhulu, okuhlanganisa ukuzinza okuhle kakhulu kokushisa, ukuhlanzeka okuphezulu, namandla emishini, kuyenza ibe yinketho ekahle kubakhiqizi abafuna ukufeza izindinganiso eziphakeme kakhulu zokukhiqiza i-semiconductor. Kusukela ku-Si Wafer ne-SiC Substrate kuya ekukhiqizweni kwamadivayisi e-Gallium Oxide Ga2O3, le filimu iletha ikhwalithi nokusebenza okungenakuqhathaniswa.
Ngefilimu ye-Silicon ye-Semicera, ungathembela emkhiqizweni ohlangabezana nezidingo zokwenziwa kwe-semiconductor yesimanje, okunikeza isisekelo esithembekile sesizukulwane esilandelayo sama-electronics.
Izinto | Ukukhiqiza | Ucwaningo | Dummy |
I-Crystal Parameters | |||
I-Polytype | 4H | ||
Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
Amapharamitha kagesi | |||
I-Dopant | n-uhlobo lweNitrojeni | ||
Ukungazweli | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Ububanzi | 150.0±0.2mm | ||
Ubukhulu | 350±25 μm | ||
Umumo oyisicaba oyinhloko | [1-100]±5° | ||
Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
Ifulethi lesibili | Lutho | ||
I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
Isakhiwo | |||
Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
Ikhwalithi Yangaphambili | |||
Ngaphambili | Si | ||
Ukuqedwa kobuso | I-Si-face CMP | ||
Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
Ukumaka kwe-laser yangaphambili | Lutho | ||
Ikhwalithi Emuva | |||
Emuva ekupheleni | C-face CMP | ||
Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
Umphetho | |||
Umphetho | I-Chamfer | ||
Ukupakisha | |||
Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
*Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. |