I-silicon nitride eboshwe nge-silicon carbide
I-Si3N4 eboshiwe ye-SiC Ceramic refractory material, ixutshwe nempushana ehlanzekile ye-SIC ephezulu kanye ne-Silicon powder, ngemva kwesifundo sokushibilika, ukusabela okufakwe ngaphansi kwe-1400 ~ 1500 ° C. Ngesikhathi se-sintering, ukugcwalisa i-Nitrogen ehlanzekile ephezulu esithandweni, khona-ke i-silicon izosabela ne-Nitrogen futhi ikhiqize i-Si3N4, Ngakho-ke i-Si3N4 eboshiwe ye-SiC impahla yenziwe nge-silicon nitride (23%) kanye ne-silicon carbide (75%) njengempahla eluhlaza. ,ixutshwe nezinto eziphilayo, futhi ibunjwe ngengxube, i-extrusion noma ukuthululwa, bese yenziwa ngemva kokumiswa kanye ne-nitrogenization.
Izici nezinzuzo:
1.Hukubekezelelana kwezinga lokushisa
I-2.Ukushisa okuphezulu kwe-thermal kanye nokumelana nokushaqeka
3.Amandla aphezulu emishini kanye nokumelana nemihuzuko
4.Ukusebenza kahle kwamandla kanye nokumelana nokugqwala
Sihlinzeka ngekhwalithi ephezulu nokunemba kwezingxenye zobumba ze-NSiC ezicutshungulwa
1.I-Slip casting
2.Ukukhipha
3.Uni Axial Pressing
4.Isostatic Pressing
I-Material Datasheet
| >Ukwakheka Kwamakhemikhali | Sic | 75% |
| I-Si3N4 | ≥23% | |
| Khulula Si | 0% | |
| Ukuminyana ngobuningi (g/cm3) | 2.70～2.80 | |
| I-porosity ebonakalayo (%) | 12～15 | |
| Amandla okugoba ku-20 ℃(MPa) | 180～190 | |
| Gobisa amandla ku-1200 ℃(MPa) | 207 | |
| Gobisa amandla ku-1350 ℃(MPa) | 210 | |
| Amandla acindezelayo ku-20 ℃(MPa) | 580 | |
| I-Thermal conductivity ku-1200 ℃(w/mk) | 19.6 | |
| I-thermal expansion coefficient ku-1200 ℃(x 10-6/C) | 4.70 | |
| Ukumelana nokushaqeka okushisayo | Kuhle kakhulu | |
| Ubukhulu. izinga lokushisa (℃) | 1600 | |
