I-Silicon nitride eboshelwe ku-silicon carbide Refractory Brick

Incazelo emfushane:

I-Semicera Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe.Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, nentsha ekukhiqizeni ama-semiconductor,imboni ye-photovoltaicnezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganiswe ne-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengomhlinzeki othembekile, siyakuqonda ukubaluleka kwezinto ezisetshenziswayo ohlelweni lokukhiqiza, futhi sizibophezele ekuletheni imikhiqizo ehlangabezana namazinga aphezulu ekhwalithi ukuze sifeze izidingo zamakhasimende ethu.

 

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Silicon nitride ehlanganiswe ne-silicon carbide kiln inezici zamandla okushisa aphezulu, ukumelana nokushaqeka okuhle kokushisa, ukuguquguquka okulula, ukumelana ne-oxidation, ukumelana nokugqwala, ukuhamba kahle kwe-thermal nokunye.

Isitini esiphikisayo (3)

Izinkomba zokusebenza eziyinhloko

Into

Inkomba yezitini zomlilo

Incazelo ye-Kiln

Inkomba yomkhiqizo onobunjwa

I-porosity ebonakalayo(%

<16

<16

<14

Ukuminyana ngobuningi(g/cm3

2 2.65

2 2.65

2 2.68

Amandla acindezelayo ekamelweni lokushisa(I-MPa

2 160

2 170

2 180

Amandla okugoba ekamelweni lokushisa(1400X: I-MPa

2 40

2 45

2 45

Amandla okugoba okushisa aphezulu(1400r I-MPa

2 50

2 50

2 50

I-coefficient yokwanda kwe-thermal(Idatha ye-110CTCxioVC

<4.18

<4.18

<4.18

I-Thermal conductivity(1100C

216

2 16

216

Ama-Refractories(°C

1800

1800

1800

0.2 MPa Ukuthambisa izinga lokushisa ngaphansi komthwalo(X:)

1600

1600

> 1700

Izinga lokushisa eliphezulu lokusebenza(°C

1550

1550

1550

Imikhiqizo isetshenziswa kakhulu kumasondo okugaya e-ceramic, imikhiqizo ephezulu ye-aluminium, ibhola le-aluminium porcelain, iziko lezimboni, i-ceramic kagesi, i-porcelain kagesi ephezulu, i-sanitary ware, i-porcelain yansuku zonke, i-nitride alloy kanye ne-foam ceramics nezinye izimboni.

Ukumelana nokugqokwa kwezinto ze-Si3N4-SiC izikhathi ezingu-3.13 kunensimbi engagugi (Crl5Mo3), futhi isisindo singu-1/3 kuphela waleso sensimbi engagugi (Crl5Mo3).

Amanani okunciphisa ikhwalithi yokumelana nokugqwala kwe-Si3N4-SiC ne-calcium carbide ne-alumina ezixazululweni ezihlukahlukene ami kanje:

Isixazululo sokuhlola

Izinga lokushisa ("C)

I-Si3N4-SiC

I-ceramics evamile

I-aluminium carbide

I-aluminium oxide

98 %I-sulfuric acid

100

1.8

55.0

> 1000

65,0

50 %I-sodium hydroxide

100

2,5

> 1000

5.0

75.0

53 %I-Hydrofluoric acid

25

< 0.2

7.9

8.0

20,0

85 %I-Phosphoric acid

100

< 0.2

8.8

55.0

> 1000

70 %I-nitric acid

100

< 0.2

0.5

> 1000

7,0

45 %I-potassium hydroxide

100

< 0.2

> 1000

3.0

60,0

25 %I-Hydrochloric acid

70

< 0.2

0.9

85.0

72,0

10% Hydrofluoric acid +57% Nitric acid

 

25

< 0.2

> 1000

> 1000

16,0

Ifenisha yekhishi (7)

Semicera Indawo yokusebenza Indawo yokusebenza ye-Semicera 2 Umshini wezinsimbi Ukucubungula kwe-CNN, ukuhlanzwa kwamakhemikhali, i-CVD coating Inkonzo yethu


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