I-Silicon Nitride Ceramic Substrate ye-Semicera imele isiqongo sobuchwepheshe bezinto ezithuthukisiwe, ehlinzeka ngokuqhutshwa kwe-thermal okukhethekile kanye nezakhiwo eziqinile zemishini. Iklanyelwe izinhlelo zokusebenza ezisebenza kahle kakhulu, le substrate idlula kahle kakhulu ezindaweni ezidinga ukuphathwa okuthembekile kokushisa kanye nobuqotho besakhiwo.
Ama-Silicon Nitride Ceramic Substrates ethu aklanyelwe ukumelana namazinga okushisa adlulele nezimo ezinzima, awenze alungele amadivayisi kagesi anamandla amakhulu kanye namaza. I-conductivity yabo ephakeme yokushisa iqinisekisa ukuchithwa kokushisa okuphumelelayo, okubalulekile ekugcineni ukusebenza nokuhlala isikhathi eside kwezingxenye ze-elekthronikhi.
Ukuzinikela kwe-Semicera ngekhwalithi kubonakala kuyo yonke i-Silicon Nitride Ceramic Substrate esiyikhiqizayo. I-substrate ngayinye ikhiqizwa kusetshenziswa izinqubo zesimanje zokuqinisekisa ukusebenza okungaguquki kanye nokukhubazeka okuncane. Leli zinga eliphezulu lokunemba lisekela izimfuno ezinzima zezimboni ezinjengezezimoto, i-aerospace, kanye nezokuxhumana.
Ngaphezu kwezinzuzo zabo ezishisayo nezemishini, ama-substrates ethu anikezela ngezinto ezinhle kakhulu zokuvala ugesi, ezifaka isandla ekuthembekeni kukonke kwemishini yakho kagesi. Ngokunciphisa ukuphazamiseka kukagesi nokuthuthukisa ukuqina kwengxenye, I-Silicon Nitride Ceramic Substrates ye-Semicera idlala indima ebalulekile ekuthuthukiseni ukusebenza kwedivayisi.
Ukukhetha i-Silicon Nitride Ceramic Substrate ye-Semicera kusho ukutshala imali emkhiqizweni oletha ukusebenza okuphezulu nokuqina. Ama-substrates ethu akhiwe ukuze ahlangabezane nezidingo zezinhlelo zokusebenza ze-elekthronikhi ezithuthukisiwe, okuqinisekisa ukuthi idivayisi yakho iyazuza kubuchwepheshe bezinto ezisezingeni eliphezulu nokuthembeka okukhethekile.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm,Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
