I-Silicon ku-Insulator Waferskusuka ku-Semicera zenzelwe ukuhlangabezana nesidingo esikhulayo sezixazululo ze-semiconductor ezisebenza kahle kakhulu. Ama-wafers ethu e-SOI anikeza ukusebenza kukagesi okuphakeme kanye nokunciphisa amandla edivayisi ye-parasitic, okuwenza alungele izinhlelo zokusebenza ezithuthukisiwe ezifana namadivayisi we-MEMS, izinzwa, namasekhethi ahlanganisiwe. Ubuchwepheshe be-Semicera ekukhiqizeni ama-wafer buqinisekisa ukuthi ngayinyeIkhekhe le-SOIinikeza imiphumela ethembekile, yekhwalithi ephezulu yezidingo zakho zobuchwepheshe besizukulwane esilandelayo.
EyethuI-Silicon ku-Insulator Wafersnikeza ibhalansi efanele phakathi kokuphumelela kwezindleko nokusebenza. Njengoba izindleko ze-soi wafer ziya ngokuya zincintisana, lawa mawafa asetshenziswa kabanzi kuhlu lwezimboni, okubandakanya ama-microelectronics kanye ne-optoelectronics. Inqubo yokukhiqiza ye-Semicera enembayo ephezulu iqinisekisa ukubopha kwe-wafer ephakeme nokufana, iyenze ifanelekele ukusetshenziswa okuhlukahlukene, kusukela kumawafa e-SOI e-cavity kuya kumawafa e-silicon ajwayelekile.
Izici Eziyinhloko:
•Amawafa e-SOI ekhwalithi ephezulu alungiselelwe ukusebenza ku-MEMS nakwezinye izinhlelo zokusebenza.
•Izindleko zokuncintisana ze-soi wafer zamabhizinisi afuna izixazululo ezithuthukile ngaphandle kokubeka engcupheni ikhwalithi.
•Ilungele ubuchwepheshe obusezingeni eliphezulu, obunikeza ukuhlukaniswa kukagesi okuthuthukisiwe kanye nokusebenza kahle kwe-silicon kumasistimu wezivikeli.
EyethuI-Silicon ku-Insulator Waferszenzelwe ukuhlinzeka ngezixazululo ezisebenza kahle kakhulu, zisekela igagasi elilandelayo lokuqamba izinto ezintsha kubuchwepheshe be-semiconductor. Ukuthi usebenza ku-cavityAma-wafers e-SOI, Amadivayisi we-MEMS, noma i-silicon ezingxenyeni ze-insulator, i-Semicera iletha ama-wafers ahlangabezana nezindinganiso eziphakeme kakhulu embonini.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
