I-Silicon Thermal Oxide Wafer

Incazelo emfushane:

I-Semicera Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe. Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, kanye nentsha ekukhiqizeni ama-semiconductor, imboni ye-photovoltaic nezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganiswe ne-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengamanje, siwukuphela komkhiqizi ohlinzeka ngokuhlanzeka kwe-SiC 99.9999% kanye ne-99.9% ye-silicon carbide eyenziwe kabusha. Ubude bokunamathela be-SiC obukhulu singenza ama-2640mm.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ungqimba lwe-thermal oxide lwe-silicon wafer ungqimba lwe-oxide noma ungqimba lwe-silica olwakhiwe endaweni engenalutho ye-silicon wafer ngaphansi kwezimo zokushisa eziphezulu ezine-oxidizing agent.Ungqimba lwe-thermal oxide lwe-silicon wafer luvamise ukukhuliswa esithandweni somlilo esivundlile, futhi izinga lokushisa lokukhula livamise ukuba ngu-900 ° C ~1200 ° C, futhi kunezindlela ezimbili zokukhula "ze-oxidation emanzi" kanye "ne-oxidation eyomile". Isendlalelo se-thermal oxide yisendlalelo se-oxide "esikhulile" esine-homogeneity ephakeme namandla e-dielectric aphezulu kunesendlalelo se-oxyde efakwe i-CVD. I-thermal oxide layer iyisendlalelo esihle kakhulu se-dielectric njenge-insulator. Kumadivayisi amaningi asekelwe ku-silicon, ungqimba lwe-thermal oxide ludlala indima ebalulekile njengesendlalelo sokuvimbela i-doping kanye ne-surface dielectric.

Amathiphu: Uhlobo lwe-oxidation

1. I-oxidation eyomile

I-silicon iphendulana nomoya-mpilo, futhi ungqimba lwe-oxide luthuthela ungqimba oluyisisekelo. I-oxidation eyomile idinga ukwenziwa ekushiseni kuka-850 kuya ku-1200 ° C, futhi izinga lokukhula liphansi, elingasetshenziswa ekukhuleni kwesango lokufakwa kwe-MOS. Uma ikhwalithi ephezulu, ungqimba lwe-silicon oxide oluncane kakhulu ludingeka, i-oxidation eyomile iyakhethwa kune-oxidation emanzi.

Umthamo we-oxidation owomile: 15nm~300nm(150A ~ 3000A)

2. I-oxidation emanzi

Le ndlela isebenzisa ingxube ye-hydrogen nomoya-mpilo ohlanzekile kakhulu ukuze ishise ku-~1000 ° C, ngaleyo ndlela ikhiqize umhwamuko ukuze kwakhe ungqimba lwe-oxide. Nakuba i-oxidation emanzi ayikwazi ukukhiqiza ungqimba oluphezulu lwe-oxidation njenge-oxidation eyomile, kodwa okwanele ukuze kusetshenziswe njengendawo yokuhlukanisa, uma kuqhathaniswa ne-oxidation eyomile kunenzuzo ecacile ukuthi inezinga eliphezulu lokukhula.

Umthamo we-oxidation omanzi: 50nm~ 15µm (500A ~15µm)

3. Indlela eyomile - indlela emanzi - indlela eyomile

Ngale ndlela, umoya-mpilo ohlanzekile owomile ukhishwa esithandweni se-oxidation ekuqaleni, i-hydrogen yengezwa phakathi ne-oxidation, futhi i-hydrogen igcinwa ekugcineni ukuze kuqhutshekwe ne-oxidation nge-oxygen ehlanzekile eyomile ukuze yakhe isakhiwo se-oxidation esiqinile inqubo ye-oxidation emanzi evamile ngendlela yesitimu samanzi.

4. I-TEOS oxidation

I-Oxidation Technique 氧化工艺	I-oxidation emanzi noma i-Oxidation Eyomile 湿法氧化/干法氧化
Ububanzi 硅片直径	2″ / 3″ / 4″ / 6″ / 8" / 12" 英寸
Ubukhulu be-Oxide 氧化层厚度	100 Å ~ 15µm 10nm ~ 15µm
Ukubekezelelana 公差范围	+/- 5%
Ubuso 表面	I-Single Side Oxidation(SSO) / I-Double Sides Oxidation(DSO) 单面氧化/双面氧化
Isithando somlilo 氧化炉类型	Isithando somlilo esivundlile 水平管式炉
Igesi 气体类型	Igesi yeHydrojeni ne-Oxygen 氢氧混合气体
Izinga lokushisa 氧化温度	900℃ ~ 1200 ℃ 900 ~ 1200摄氏度
Inkomba ye-refractive 折射率	1.456