Isingeniso se-CVD TaC Coating:
I-CVD TaC Coating ubuchwepheshe obusebenzisa i-chemical vapor deposition ukuze ifake i-tantalum carbide (TaC) enamathela endaweni engaphansi. I-Tantalum carbide iyimpahla ye-ceramic esebenza kahle kakhulu enezakhiwo ezinhle kakhulu zemishini namakhemikhali. Inqubo ye-CVD ikhiqiza ifilimu ye-TaC efanayo ebusweni be-substrate ngokusabela kwegesi.
Izici eziyinhloko:
Ubulukhuni obuhle kakhulu nokumelana nokugqoka: I-Tantalum carbide inobulukhuni obuphezulu kakhulu, futhi I-CVD TaC Coating ingathuthukisa kakhulu ukumelana nokugqokwa kwe-substrate. Lokhu kwenza i-coating ilungele ukusetshenziswa ezindaweni ezigqoke kakhulu, njengamathuluzi okusika kanye nesikhunta.
High Temperature Ukuzinza: Izingubo ze-TaC zivikela isithando somlilo esibalulekile nezingxenye ze-reactor emazingeni okushisa afika ku-2200°C, okubonisa ukuzinza okuhle. Igcina ukuzinza kwamakhemikhali nemishini ngaphansi kwezimo zokushisa ezidlulele, okwenza ifaneleke ukucubungula izinga lokushisa eliphezulu kanye nezicelo ezindaweni ezishisa kakhulu.
Ukuzinza kwamakhemikhali okuhle kakhulu: I-Tantalum carbide inokumelana nokugqwala okuqinile kuma-acids amaningi nama-alkali, futhi I-CVD TaC Coating ingavimbela ngempumelelo ukulimala kwe-substrate ezindaweni ezigqwalayo.
Iphuzu lokuncibilika eliphezulu: I-Tantalum carbide inezinga eliphezulu lokuncibilika (cishe i-3880 ° C), evumela i-CVD TaC Coating ukuthi isetshenziswe ezimweni zokushisa eziphakeme kakhulu ngaphandle kokuncibilika noma ukwehlisa isithunzi.
I-conductivity enhle kakhulu ye-thermal: Ukufakwa kwe-TaC kunokuhamba okuphezulu kwe-thermal, okusiza ukukhipha ngokuphumelelayo ukushisa ezinqubweni zokushisa okuphezulu nokuvimbela ukushisa kwendawo.
Izinhlelo zokusebenza ezingaba khona:
• Izingxenye ze-Gallium Nitride (GaN) kanye ne-Silicon Carbide epitaxial CVD reactor ezifaka ama-wafer carriers, izitsha zesathelayithi, ama-showerheads, usilingi, nama-susceptors
• I-Silicon carbide, i-gallium nitride ne-aluminium nitride (i-AlN) yokukhula kwekristalu okuhlanganisa ama-crucible, izibambi zembewu, izindandatho zomhlahlandlela nezihlungi
• Izingxenye zemboni ezihlanganisa izinto ezishisisa ukumelana, imijovo yomjovo, izindandatho zokufihla ubuso kanye namajigi okubrawuza
Izici zohlelo lokusebenza:
• Izinga lokushisa lizinzile ngaphezu kuka-2000°C, okuvumela ukusebenza emazingeni okushisa aphezulu
•Ingazweli ku-hydrogen (Hz), ammonia (NH3), i-monosilane (SiH4) ne-silicon (Si), ihlinzeka ngokuvikeleka ezindaweni zamakhemikhali ezinonya
• Ukumelana nokushaqeka kwayo okushisayo kwenza imijikelezo yokusebenza esheshayo
• I-graphite inokunamathela okuqinile, iqinisekisa impilo ende yesevisi futhi ayikho i-delamination yokunamathela.
• Ukuhlanzeka okuphezulu kakhulu ukuze kuqedwe ukungcola okungadingekile noma ukungcola
• Ukwembozwa kwe-conformal coating ekubekezeleleni okuqinile kwe-dimensional
Imininingwane yobuchwepheshe:
Ukulungiswa kwezingubo eziminyene ze-tantalum carbide nge-CVD:
I-TAC enamathela ngokucwebezela okuphezulu nokufana okuhle kakhulu:
I-CVD TAC COATING Technical Parameters_Semicera:
Izakhiwo ezibonakalayo ze-TaC coating | |
Ukuminyana | 14.3 (g/cm³) |
I-Bulk Concentration | 8 x1015/cm |
Ukukhipha umoya okukhethekile | 0.3 |
I-coefficient yokwandisa ukushisa | 6.3 10-6/K |
Ukuqina(HK) | 2000 HK |
I-Bulk Resistivity | 4.5 ohm-cm |
Ukumelana | 1x10-5Om*cm |
Ukuzinza okushisayo | <2500℃ |
Ukuhamba | 237 cm2/Vs |
Usayizi we-graphite uyashintsha | -10 ~ 20um |
Ukuqina kwe-coating | ≥20um inani elijwayelekile (35um+10um) |
Okungenhla kungamanani ajwayelekile.