I-Semicera iveza okuhamba phambili emboniniI-Wafer Carriers, eklanyelwe ukuhlinzeka ngokuvikeleka okuphezulu kanye nokuthuthwa okungenamthungo kwama-wafer athambile e-semiconductor kuzo zonke izigaba ezihlukahlukene zenqubo yokukhiqiza. EyethuI-Wafer Carriersaklanywe ngokucophelela ukuze ahlangabezane nezidingo eziqinile zokwenziwa kwe-semiconductor yesimanje, iqinisekisa ubuqotho nekhwalithi yamawafa akho ayagcinwa ngaso sonke isikhathi.
Izici Eziyinhloko:
• I-Premium Material Construction:Iklanywe ngekhwalithi ephezulu, izinto ezimelana nokungcoliswa eziqinisekisa ukuqina nempilo ende, ezizenza zilungele izindawo zegumbi elihlanzekile.
•Idizayini enembile:Ifaka ukuqondisa kwesikhala okunembayo kanye nezindlela zokubamba ezivikelekile ukuvimbela ukushelela kwe-wafer kanye nokulimala ngesikhathi sokuphatha nokuthuthwa.
•Ukuhambisana Okuhlukahlukene:Ithatha izinhlobonhlobo zamasayizi ama-wafer nobukhulu, ihlinzeka ngokuguquguquka kwezinhlelo zokusebenza ezahlukahlukene ze-semiconductor.
•Ukuphatha Ergonomic:Idizayini engasindi futhi esebenziseka kalula yenza kube lula ukulayishwa nokulayishwa, kuthuthukise ukusebenza kahle kanye nokunciphisa isikhathi sokuphatha.
•Izinketho ezenziwe ngokwezifiso:Inikeza ukwenza ngokwezifiso ukuze kuhlangatshezwane nezidingo ezithile, okuhlanganisa ukukhetha kwezinto ezibonakalayo, ukulungiswa kosayizi, kanye nokulebula kokuhlanganiswa kokuhamba komsebenzi okuthuthukisiwe.
Thuthukisa inqubo yakho yokukhiqiza i-semiconductor nge-Semicera'sI-Wafer Carriers, ikhambi eliphelele lokuvikela amawafa akho ekungcoleni nasekulimaleni komshini. Thembela ekuzibophezeleni kwethu kukhwalithi nokuqamba okusha ukuletha imikhiqizo engagcini nje ngokuhlangabezana kodwa nedlule izindinganiso zemboni, siqinisekisa ukuthi imisebenzi yakho isebenza kahle nangempumelelo.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
