I-Semicera'sIkhasethi le-Waferiyingxenye ebalulekile yenqubo yokukhiqiza i-semiconductor, eklanyelwe ukubamba ngokuphephile futhi ithuthe amawafa athambile e-semiconductor. IIkhasethi le-Waferinikeza isivikelo esikhethekile, siqinisekisa ukuthi i-wafer ngayinye igcinwa ingenakho ukungcola kanye nokulimala ngokomzimba ngesikhathi sokuphatha, ukugcinwa, kanye nokuhamba.
Yakhiwe ngezinto ezihlanzekile, ezimelana namakhemikhali, i-SemiceraIkhasethi le-Waferiqinisekisa amazinga aphezulu okuhlanzeka nokuqina, okubalulekile ekugcineni ubuqotho bamawafa kuzo zonke izigaba zokukhiqiza. Ubunjiniyela obunembayo balawa makhasethi buvumela ukuhlanganiswa okungenamthungo nezinhlelo zokubamba ezizenzakalelayo, kuncishiswe ubungozi bokungcola kanye nokulimala kwemishini.
Umklamo weIkhasethi le-Waferfuthi isekela ukugeleza komoya okuphelele nokulawulwa kwezinga lokushisa, okubalulekile ezinqubweni ezidinga izimo ezithile zemvelo. Kungakhathaliseki ukuthi isetshenziswa kumagumbi ahlanzekile noma ngesikhathi sokucubungula okushisayo, i-SemiceraIkhasethi le-Waferyakhelwe ukuhlangabezana nezidingo eziqinile zemboni ye-semiconductor, ihlinzeka ngokusebenza okuthembekile nokungaguquguquki ukuthuthukisa ukusebenza kahle kokukhiqiza kanye nekhwalithi yomkhiqizo.
| Izinto | Ukukhiqiza | Ucwaningo | Dummy |
| I-Crystal Parameters | |||
| I-Polytype | 4H | ||
| Iphutha lokuma kobuso | <11-20 >4±0.15° | ||
| Amapharamitha kagesi | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukungazweli | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Ububanzi | 150.0±0.2mm | ||
| Ubukhulu | 350±25 μm | ||
| Umumo oyisicaba oyinhloko | [1-100]±5° | ||
| Ubude obuyisicaba obuyisisekelo | 47.5±1.5mm | ||
| Ifulethi lesibili | Lutho | ||
| I-TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| I-LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Khothama | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | I-Ra≤0.2nm (5μm*5μm) | ||
| Isakhiwo | |||
| Ukuminyana kwe-Micropipe | <1 eya/cm2 | <10 kwe/cm2 | <15 kwe/cm2 |
| Ukungcola kwensimbi | ≤5E10 ama-athomu/cm2 | NA | |
| I-BPD | ≤1500 i-e/cm2 | ≤3000 i-e/cm2 | NA |
| I-TSD | ≤500 i-e/cm2 | ≤1000 i-e/cm2 | NA |
| Ikhwalithi Yangaphambili | |||
| Ngaphambili | Si | ||
| Ukuqedwa kobuso | I-Si-face CMP | ||
| Izinhlayiya | ≤60ea/wafer (usayizi≥0.3μm) | NA | |
| Ukuklwebheka | ≤5ea/mm. Ubude obuqongelelwe ≤Ububanzi | Ubude obuqongelelwe≤2*Ububanzi | NA |
| Ikhasi eliwolintshi/imigodi/amabala/ama-striations/ imifantu/ukungcola | Lutho | NA | |
| Ama-Edge chips/indents/fracture/hex plate | Lutho | ||
| Izindawo ze-Polytype | Lutho | Indawo eqoqiwe≤20% | Indawo eqoqiwe≤30% |
| Ukumaka kwe-laser yangaphambili | Lutho | ||
| Ikhwalithi Emuva | |||
| Emuva ekupheleni | C-face CMP | ||
| Ukuklwebheka | ≤5ea/mm, Ubude obuqongelelayo≤2*Ububanzi | NA | |
| Ukukhubazeka kwasemuva (ama-edge chips/indents) | Lutho | ||
| Ukuhwalala emuva | I-Ra≤0.2nm (5μm*5μm) | ||
| Ukumaka kwe-laser emuva | 1 mm (kusuka emaphethelweni aphezulu) | ||
| Umphetho | |||
| Umphetho | I-Chamfer | ||
| Ukupakisha | |||
| Ukupakisha | I-Epi-ilungile ngokufakwa kwe-vacuum Ukupakishwa kwekhasethi le-multi-wafer | ||
| *Amanothi: "NA" kusho ukuthi asikho isicelo Izinto ezingashiwongo zingabhekisa ku-SEMI-STD. | |||
