2~6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate

Incazelo emfushane:

I-4° off-engeli ye-P-type 4H-SiC substrate yi-engeli ethize ye-semiconductor, lapho i-“4° off-angle” ibhekisela ku-crystal orientation angle ye-wafer ibe ama-degree angu-4, futhi “uhlobo lwe-P” lubhekisela uhlobo lwe-conductivity ye-semiconductor. Lokhu okuqukethwe kunezinhlelo zokusebenza ezibalulekile embonini ye-semiconductor, ikakhulukazi emikhakheni ye-electronics yamandla kanye ne-high-frequency electronics.

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-substrate e-Semicera angu-2~6 inch 4° off-angle P-type 4H-SiC akhiwe ukuze ahlangabezane nezidingo ezikhulayo zamandla asebenza kahle kakhulu nabakhiqizi bedivayisi ye-RF. I-4° off-angle orientation iqinisekisa ukukhula kwe-epitaxial okuthuthukisiwe, okwenza le substrate ibe isisekelo esikahle sezinhlobonhlobo zamadivayisi asemiconductor, okuhlanganisa ama-MOSFET, ama-IGBT, nama-diode.

Le substrate engu-2~6 inch 4° off-angle P-type 4H-SiC inezinto ezibonakalayo ezinhle kakhulu, ezihlanganisa ukuguquguquka okuphezulu kwe-thermal, ukusebenza kahle kukagesi, nokuzinza okuvelele kwemishini. I-off-angle orientation isiza ukunciphisa ukuminyana kwe-micropipe futhi ikhuthaze izendlalelo ze-epitaxial ezibushelelezi, okubalulekile ekuthuthukiseni ukusebenza nokuthembeka kwedivayisi yokugcina ye-semiconductor.

Ama-substrate e-Semicera angu-2~6 inch 4° off-angle P-type 4H-SiC atholakala ngezinhlobonhlobo zamadayamitha, asukela kumayintshi angu-2 ukuya kwangu-6 amayintshi, ukuze ahlangabezane nezimfuneko ezihlukene zokukhiqiza. Ama-substrates ethu aklanywe kahle ukuze anikeze amazinga afanayo e-doping kanye nezici zekhwalithi ephezulu, okuqinisekisa ukuthi i-wafer ngayinye ihlangabezana nokucaciswa okuqinile okudingekayo kwezinhlelo zokusebenza ezithuthukisiwe ze-elekthronikhi.

Ukuzibophezela kwe-Semicera ekusunguleni izinto ezintsha kanye nekhwalithi kuqinisekisa ukuthi ama-substrate ethu angu-2~6 inch 4° off-angle P-type 4H-SiC aletha ukusebenza okungaguquki ezinhlobonhlobo zezinhlelo zokusebenza kusukela kugesi wamandla kuya kumadivayisi anemvamisa ephezulu. Lo mkhiqizo uhlinzeka ngesixazululo esithembekile sesizukulwane esilandelayo sama-semiconductors akonga amandla, asebenza kahle kakhulu, asekela intuthuko yezobuchwepheshe ezimbonini ezinjengezezimoto, ezokuxhumana, namandla avuselelekayo.

Amazinga ahlobene nosayizi

Usayizi	2intshi	4intshi
Ububanzi	50.8 mm±0.38 mm	100.0 mm+0/-0.5 mm
I-Surface Orentation	4° ngase<11-20>±0.5°	4° ngase<11-20>±0.5°
Ubude Befulethi obuyisisekelo	16.0 mm±1.5mm	32.5mm±2mm
Ubude Befulethi besibili	8.0 mm±1.5mm	18.0 mm ± 2 mm
Isisekelo se-Flat Orientation	I-Parallelto <11-20>±5.0°	Parallelto<11-20>±5.0c
I-Flat Orientation yesibili	90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu	90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu
I-Surface Qeda	I-C-Face: I-Optical Polish, i-Si-Face: i-CMP	Ubuso C:OpticalPolish, Si-Face: CMP
I-Wafer Edge	Beveling	Beveling
Ukuqina Kobuso	I-Si-Face Ra<0.2 nm	I-Si-Face Ra<0.2nm
Ubukhulu	350.0±25.0um	350.0±25.0um
I-Polytype	4H	4H
I-Doping	p-Uhlobo	p-Uhlobo

Amazinga ahlobene nosayizi

Usayizi	6inch
Ububanzi	150.0 mm+0/-0.2 mm
I-Surface Orientation	4° ngase<11-20>±0.5°
Ubude Befulethi obuyisisekelo	47.5 mm ± 1.5mm
Ubude Befulethi besibili	Lutho
Isisekelo se-Flat Orientation	Ukuhambisana no-<11-20>±5.0°
I-SecondaryFlat Orientation	90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu
I-Surface Qeda	I-C-Face: I-Optical Polish, i-Si-Face:CMP
I-Wafer Edge	Beveling
Ukuqina Kobuso	I-Si-Face Ra<0.2 nm
Ubukhulu	350.0±25.0μm
I-Polytype	4H
I-Doping	p-Uhlobo