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2~6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate

2~6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate Isithombe Esifakiwe
  • 2~6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate
  • 2~6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate

Incazelo emfushane:

I-4° off-engeli ye-P-type 4H-SiC substrate yi-engeli ethize ye-semiconductor, lapho i-“4° off-angle” ibhekisela ku-crystal orientation angle ye-wafer ibe ama-degree angu-4, futhi “uhlobo lwe-P” lubhekisela uhlobo lwe-conductivity ye-semiconductor. Lokhu okuqukethwe kunezinhlelo zokusebenza ezibalulekile embonini ye-semiconductor, ikakhulukazi emikhakheni ye-electronics yamandla kanye ne-high-frequency electronics.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ama-substrate e-Semicera angu-2~6 inch 4° off-angle P-type 4H-SiC akhiwe ukuze ahlangabezane nezidingo ezikhulayo zamandla asebenza kahle kakhulu nabakhiqizi bedivayisi ye-RF. I-4° off-angle orientation iqinisekisa ukukhula kwe-epitaxial okuthuthukisiwe, okwenza le substrate ibe isisekelo esikahle sezinhlobonhlobo zamadivayisi asemiconductor, okuhlanganisa ama-MOSFET, ama-IGBT, nama-diode.

Le substrate engu-2~6 inch 4° off-angle P-type 4H-SiC inezinto ezibonakalayo ezinhle kakhulu, ezihlanganisa ukuguquguquka okuphezulu kwe-thermal, ukusebenza kahle kukagesi, nokuzinza okuvelele kwemishini. I-off-angle orientation isiza ukunciphisa ukuminyana kwe-micropipe futhi ikhuthaze izendlalelo ze-epitaxial ezibushelelezi, okubalulekile ekuthuthukiseni ukusebenza nokuthembeka kwedivayisi yokugcina ye-semiconductor.

Ama-substrate e-Semicera angu-2~6 inch 4° off-angle P-type 4H-SiC atholakala ngezinhlobonhlobo zamadayamitha, asukela kumayintshi angu-2 ukuya kwangu-6 amayintshi, ukuze ahlangabezane nezimfuneko ezihlukene zokukhiqiza. Ama-substrates ethu aklanywe kahle ukuze anikeze amazinga afanayo e-doping kanye nezici zekhwalithi ephezulu, okuqinisekisa ukuthi i-wafer ngayinye ihlangabezana nokucaciswa okuqinile okudingekayo kwezinhlelo zokusebenza ezithuthukisiwe ze-elekthronikhi.

Ukuzibophezela kwe-Semicera ekusunguleni izinto ezintsha kanye nekhwalithi kuqinisekisa ukuthi ama-substrate ethu angu-2~6 inch 4° off-angle P-type 4H-SiC aletha ukusebenza okungaguquki ezinhlobonhlobo zezinhlelo zokusebenza kusukela kugesi wamandla kuya kumadivayisi anemvamisa ephezulu. Lo mkhiqizo uhlinzeka ngesixazululo esithembekile sesizukulwane esilandelayo sama-semiconductors akonga amandla, asebenza kahle kakhulu, asekela intuthuko yezobuchwepheshe ezimbonini ezinjengezezimoto, ezokuxhumana, namandla avuselelekayo.

Amazinga ahlobene nosayizi

Usayizi

2-Intshi

4-Intshi
Ububanzi 50.8 mm±0.38 mm 100.0 mm+0/-0.5 mm
I-Surface Orentation 4° ngase<11-20>±0.5° 4° ngase<11-20>±0.5°
Ubude Befulethi obuyisisekelo 16.0 mm±1.5mm 32.5mm±2mm
Ubude Befulethi besibili 8.0 mm±1.5mm 18.0 mm ± 2 mm
Isisekelo se-Flat Orientation I-Parallelto <11-20>±5.0° Parallelto<11-20>±5.0c
I-Flat Orientation yesibili 90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu 90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu
I-Surface Qeda I-C-Face: I-Optical Polish, i-Si-Face: i-CMP Ubuso C:OpticalPolish, Si-Face: CMP
I-Wafer Edge Beveling Beveling
Ukuqina Kobuso I-Si-Face Ra<0.2 nm I-Si-Face Ra<0.2nm
Ubukhulu 350.0±25.0um 350.0±25.0um
I-Polytype 4H 4H
I-Doping p-Uhlobo p-Uhlobo

Amazinga ahlobene nosayizi

Usayizi

 6-Intshi
Ububanzi 150.0 mm+0/-0.2 mm
I-Surface Orientation 4° ngase<11-20>±0.5°
Ubude Befulethi obuyisisekelo 47.5 mm ± 1.5mm
Ubude Befulethi besibili Lutho
Isisekelo se-Flat Orientation Ihambisana no-<11-20>±5.0°
I-SecondaryFlat Orientation 90°CW kusukela ku-± 5.0° okuyinhloko, i-silicon ibheke phezulu
I-Surface Qeda Ubuso be-C: I-Optical Polish, i-Si-Face:CMP
I-Wafer Edge Beveling
Ukuqina Kobuso I-Si-Face Ra<0.2 nm
Ubukhulu 350.0±25.0μm
I-Polytype 4H
I-Doping p-Uhlobo

Raman

2-6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate-3

Ijika elinyakazayo

2-6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate-4

Ukuminyana kokususwa (KOH etching)

2-6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate-5

Izithombe ze-KOH

2-6 intshi 4° off-engeli P-uhlobo 4H-SiC substrate-6
Ama-wafers e-SiC
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