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Ithreyi ye-etching ye-LED Silicon Carbide ekwazi ukumelana nokugqwala (ithreyi ye-ICP etching)

Ithreyi ye-etching ye-LED Silicon Carbide evikela izinga lokushisa eliphezulu nokugqwala (ithreyi ye-ICP etching) Isithombe Esifakiwe
  • Ithreyi ye-etching ye-LED Silicon Carbide ekwazi ukumelana nokugqwala (ithreyi ye-ICP etching)

Incazelo emfushane:

I-Semicera Energy Technology Co., Ltd. ingumphakeli ohamba phambili ogxile ekusetshenzisweni kwe-wafer kanye ne-semiconductor ethuthukisiwe.Sizinikezele ekuhlinzekeni ngemikhiqizo yekhwalithi ephezulu, ethembekile, nentsha ekukhiqizeni ama-semiconductor,imboni ye-photovoltaicnezinye izinkambu ezihlobene.

Umugqa wethu womkhiqizo uhlanganisa imikhiqizo ye-graphite ehlanganiswe ne-SiC/TaC nemikhiqizo yobumba, ehlanganisa izinto ezihlukahlukene ezifana ne-silicon carbide, i-silicon nitride, ne-aluminium oxide nokunye.

Njengomhlinzeki othembekile, siyakuqonda ukubaluleka kwezinto ezisetshenziswayo ohlelweni lokukhiqiza, futhi sizibophezele ekuletheni imikhiqizo ehlangabezana namazinga aphezulu ekhwalithi ukuze sifeze izidingo zamakhasimende ethu.

 

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo Yomkhiqizo

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu : kwenziwa ngokufakwa kwekhemikhali umhwamuko ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

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Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating

Izakhiwo ze-SiC-CVD

Isakhiwo Sekristalu

I-FCC β isigaba

Ukuminyana

g/cm³

3.21

Ukuqina

Vickers ubulukhuni

2500

Usayizi Wokusanhlamvu

μm

2~10

I-Chemical Purity

%

99.99995

Amandla Okushisa

J·kg-1 ·K-1

640

I-Sublimation Temperature

℃

2700

Amandla E-Felexural

I-MPa (RT 4-point)

415

I-Young's Modulus

I-Gpa (4pt bend, 1300℃)

430

I-Thermal Expansion (CTE)

10-6K-1

4.5

I-Thermal conductivity

(W/mK)

300

 

Semicera Indawo yokusebenza
Indawo yokusebenza ye-Semicera 2
Umshini wezinsimbi
Ukucutshungulwa kwe-CNN, ukuhlanza amakhemikhali, i-CVD coating
Inkonzo yethu
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