I-Semicera's 6-inch LiNbO3 Bonding Wafer yakhelwe ukuhlangabezana namazinga aqinile emboni ye-semiconductor, iletha ukusebenza okungenakuqhathaniswa kuzo zombili izindawo zocwaningo nezokukhiqiza. Kungakhathaliseki ukuthi okokugcina okuphezulu kwe-optoelectronics, i-MEMS, noma ukupakishwa kwe-semiconductor okuthuthukisiwe, lesi silucwecwana esibophayo sinikeza ukwethembeka nokuqina okudingekayo ekuthuthukisweni kobuchwepheshe obusezingeni eliphezulu.
Embonini ye-semiconductor, i-LiNbO3 Bonding Wafer engu-6-intshi isetshenziswa kakhulu ukuhlanganisa izendlalelo ezincane kumadivayisi we-optoelectronic, izinzwa, nezinhlelo ze-microelectromechanical (MEMS). Izakhiwo zayo ezingavamile ziyenza ingxenye ebalulekile yezinhlelo zokusebenza ezidinga ukuhlanganiswa kwesendlalelo okunembile, njengasekwenziweni kwamasekhethi ahlanganisiwe (ama-IC) namadivayisi ezithombe. Ukuhlanzeka okuphezulu kwewafa kuqinisekisa ukuthi umkhiqizo wokugcina ugcina ukusebenza okuphezulu, unciphisa ingcuphe yokungcola okungathinta ukwethembeka kwedivayisi.
| Izakhiwo ezishisayo nezikagesi ze-LiNbO3 | |
| Iphoyinti lokuncibilika | 1250 ℃ |
| Izinga lokushisa le-Curie | 1140 ℃ |
| I-Thermal conductivity | 38 W/m/K @ 25 ℃ |
| I-coefficient yokunwetshwa kwe-thermal (@ 25°C) | //a, 2.0×10-6/K //c, 2.2×10-6/K |
| Ukungazweli | 2×10-6Ω·cm @ 200 ℃ |
| I-Dielectric njalo | εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2 |
| I-Piezoelectric njalo | D22=2.04×10-11C/N D33=19.22×10-11C/N |
| I-Electro-optic coefficient | γT33=32 pm/V, γS33=31pm/V, γT31=10 pm/V, γS31=8.6 pm/V, γT22=6.8 pm/V, γS22=3.4 pm/V, |
| I-half-wave voltage, DC | 3.03 KV 4.02 KV |
I-LiNbO3 Bonding Wafer engu-6-intshi evela ku-Semicera yakhelwe ngokukhethekile izinhlelo zokusebenza ezithuthukile embonini ye-semiconductor kanye ne-optoelectronics. Yaziwa ngokumelana nokugqokwa okuphakeme, ukuzinza okuphezulu kwe-thermal, kanye nokuhlanzeka okukhethekile, le wafer eyi-bonding ilungele ukukhiqizwa kwe-semiconductor esebenza kahle kakhulu, enikeza ukwethembeka okuhlala isikhathi eside nokunemba ngisho nasezimeni ezinzima.
Iklanywe ngobuchwepheshe obuphambili, i-LiNbO3 Bonding Wafer engu-6-intshi iqinisekisa ukungcoliswa okuncane, okubalulekile ezinqubweni zokukhiqiza ze-semiconductor ezidinga amazinga aphezulu okuhlanzeka. Ukuzinza kwayo okuhle kakhulu kokushisa kuyivumela ukuthi imelane namazinga okushisa aphakeme ngaphandle kokuyekethisa ubuqotho besakhiwo, okuyenza ibe ukukhetha okuthembekile kwezinhlelo zokusebenza zokubopha izinga lokushisa eliphezulu. Ukwengeza, ukumelana nokugqokwa okuvelele kwe-wafer kuqinisekisa ukuthi isebenza ngokuqhubekayo phezu kokusetshenziswa okunwetshiwe, ihlinzeka ngokuqina kwesikhathi eside nokunciphisa isidingo sokushintshwa njalo.
