Inkampani yethu ihlinzekaUkufakwa kwe-SiCizinqubo zezinsizakalo ebusweni be-graphite, izitsha zobumba nezinye izinto ngendlela ye-CVD, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon akwazi ukusabela ekushiseni okuphezulu ukuze athole ama-molecule e-Sic ahlanzekile kakhulu, angafakwa phezu kwezinto ezimboziwe ukuze enzeIsendlalelo sokuvikela se-SiCyohlobo lwe-epitaxy barrel i-hy pnotic.
Izici eziyinhloko:
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. KuhleI-SiC crystal coatedindawo ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Imininingwane Eyinhloko yeI-CVD-SIC Coating
| Izakhiwo ze-SiC-CVD | ||
| Isakhiwo Sekristalu | I-FCC β isigaba | |
| Ukuminyana | g/cm³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Usayizi Wokusanhlamvu | μm | 2~10 |
| I-Chemical Purity | % | 99.99995 |
| Amandla Okushisa | J·kg-1 ·K-1 | 640 |
| I-Sublimation Temperature | ℃ | 2700 |
| Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
| I-Young's Modulus | I-Gpa (4pt bend, 1300℃) | 430 |
| I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
