I-epitaxy ye-LED eluhlaza/oluhlaza evela ku-semicera inikezela ngezixazululo ezisezingeni eliphezulu zokwenziwa kwe-LED esebenza kahle kakhulu. Idizayinelwe ukusekela izinqubo ezithuthukisiwe zokukhula kwe-epitaxial, ubuchwepheshe be-semicera Be-LED epitaxy obuluhlaza/okuluhlaza buthuthukisa ukusebenza kahle nokunemba ekukhiqizeni ama-LED aluhlaza naluhlaza, abalulekile ezinhlelweni ezihlukahlukene ze-optoelectronic. Sisebenzisa i-Si Epitaxy yesimanje kanye ne-SiC Epitaxy, lesi sixazululo siqinisekisa ikhwalithi enhle kakhulu nokuqina.
Enqubweni yokukhiqiza, i-MOCVD Susceptor idlala indima ebalulekile, kanye nezingxenye ezifana ne-PSS Etching Carrier, ICP Etching Carrier, kanye ne-RTP Carrier, ethuthukisa imvelo yokukhula kwe-epitaxial. I-epitaxy ye-LED ye-Semicera Eluhlaza/oluhlaza iklanyelwe ukuhlinzeka ngosekelo oluzinzile lwe-LED Epitaxial Susceptor, Barrel Susceptor, ne-Monocrystalline Silicon, iqinisekisa ukukhiqizwa kwemiphumela engaguquki, yekhwalithi ephezulu.
Le nqubo ye-epitaxy ibalulekile ekudaleni Izingxenye ze-Photovoltaic futhi isekela izinhlelo zokusebenza ezifana ne-GaN ku-SiC Epitaxy, ithuthukisa ukusebenza kahle kwe-semiconductor iyonke. Kungakhathaliseki ukuthi kusekucushweni kwe-Pancake Susceptor noma okusetshenziselwa ukusetha okuthuthukile, izixazululo ze-epitaxy ze-semicera's Blue/green LED zinikeza ukusebenza okuthembekile, ukusiza abakhiqizi bahlangabezane nesidingo esikhulayo sezingxenye ze-LED zekhwalithi ephezulu.
Izici eziyinhloko:
1. Ukumelana nokushisa okuphezulu kwe-oxidation:
ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.
2. Ukuhlanzeka okuphezulu : okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.
3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.
4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
Imininingwane Eyinhloko yeI-CVD-SIC Coating
| Izakhiwo ze-SiC-CVD | ||
| Isakhiwo Sekristalu | I-FCC β isigaba | |
| Ukuminyana | g/cm³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Usayizi Wokusanhlamvu | μm | 2~10 |
| I-Chemical Purity | % | 99.99995 |
| Amandla Okushisa | J·kg-1 ·K-1 | 640 |
| I-Sublimation Temperature | ℃ | 2700 |
| Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
| I-Modulus Encane | I-Gpa (4pt bend, 1300℃) | 430 |
| I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
