Incazelo
Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.
Izici Eziyinhloko
1 .Ukuhlanzeka okuphezulu kwe-SiC ehlanganiswe ne-graphite
2. Ukumelana nokushisa okuphezulu & ukufana okushisayo
3. Ikristalu ye-SiC ecwebezelayo efakwe endaweni ebushelelezi
4. Ukuqina okuphezulu ngokumelene nokuhlanza amakhemikhali
Ukucaciswa Okuyinhloko kwe-CVD-SIC Coating
| Izakhiwo ze-SiC-CVD | ||
| Isakhiwo Sekristalu | I-FCC β isigaba | |
| Ukuminyana | g/cm³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Usayizi Wokusanhlamvu | μm | 2~10 |
| I-Chemical Purity | % | 99.99995 |
| Amandla Okushisa | J·kg-1 ·K-1 | 640 |
| I-Sublimation Temperature | ℃ | 2700 |
| Amandla E-Felexural | I-MPa (RT 4-point) | 415 |
| I-Young's Modulus | I-Gpa (4pt bend, 1300℃) | 430 |
| I-Thermal Expansion (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
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